相关论文: Giant gate-controlled odd-parity magnetoresistance…
Magnetoresistance typically exhibits even symmetry with respect to the magnetic field, owing to time reversal symmetry (TRS) as dictated by Onsager reciprocity relations. However, in certain systems where TRS is broken, magnetoresistance…
The evolution of information technology has been driven by the discovery of new forms of large magnetoresistance (MR), such as giant magnetoresistance (GMR) and tunnelling magnetoresistance (TMR) in magnetic multilayers. Recently, new types…
Magnetotransport measurements are crucial for understanding the Fermi surface properties, magnetism, and topology in quantum materials. Here, we report the discovery of giant room temperature odd-parity magnetoresistance (OMR) in a bilayer…
Magnetotransport measurements are a sensitive probe of symmetry and electronic structure in quantum materials. While conventional metals exhibit longitudinal magnetoconductivity that is even in a magnetic field ($B$) for small $B$, we show…
The phenomena of odd-parity magnetoresistance and the planar Hall effect are deeply entwined with ferromagnetism. The intrinsic magnetization of the ordered state permits these unusual and rarely observed manifestations of Onsager's theorem…
The magnetic proximity effect (MPE), ferromagnetic coupling at the interface of magnetically dissimilar layers, attracts much attention as a promising pathway for introducing ferromagnetism into a high-mobility non-magnetic conducting…
The ordinary magnetoresistance (MR) of doped semiconductors is positive and quadratic in a low magnetic field, B, as it should be in the framework of the Boltzmann kinetic theory or in the conventional hopping regime. We observe an unusual…
Anisotropic magnetoresistance (AMR), originating from spin-orbit coupling (SOC), is the sensitivity of the electrical resistance in magnetic systems to the direction of spin magnetization. Although this phenomenon has been experimentally…
Odd-parity magnets (OPMs) have emerged as a fundamental class of unconventional magnetisms, characterized by time-reversal-preserving non-relativistic spin splitting (NSS). Despite growing interest, the fundamental understanding of OPMs…
We present magnetoresistance (MR) experiments on an InAs nanowire quantum dot device with two ferromagnetic sidegates (FSGs) in a split-gate geometry. The wire segment can be electrically tuned to a single dot or to a double dot regime…
A large spin-dependent and electric field-tunable magnetoresistance of a two-dimensional electron system (2DES) is a key ingredient for the realization of many novel concepts for spin-based electronic devices. The low magnetoresistance…
Superconductivity and magnetism are generally incompatible because of the opposing requirement on electron spin alignment. When combined, they produce a multitude of fascinating phenomena, including unconventional superconductivity and…
Significant attention has been drawn to electronic transport in chiral materials coupled to ferromagnets in the chirality induced spin selectivity (CISS) effect. A large magnetoresistance (MR) is usually observed which is widely interpreted…
Colossal magnetoresistance (CMR) is commonly observed in magnetic semiconductors when an external magnetic field is applied, usually accompanied by anomalous resistivity peaks or humps which were previously considered as evidence of a…
We measure the giant magnetoresistance (GMR) with the current both parallel and perpendicular to the direction of the magnetization in the ferromagnetic (FM) layers and thus probe the anisotropy of the effective mean free paths for the…
In solid state physics, giant magnetoresistance is the large change in electrical resistance due to an external magnetic field. Here we show that giant magnetoresistance is possible in a spin chain composed of weakly interacting layers of…
We report the observation of a new phenomenon of colossal magnetoresistance in a 40 nm wide GaAs quantum well in the presence of an external magnetic field applied parallel to the high-mobility 2D electron layer. In a strong magnetic field,…
The unidirectional magnetoresistance (UMR) is one of the most complex spin-dependent transport phenomena in ferromagnet/non-magnet bilayers, which involves spin injection and accumulation due to the spin Hall effect (SHE) or…
Colossal magnetoresistance (CMR) is highly applicable in spintronic devices such as magnetic sensors, magnetic memory, and hard drives. Typically, CMR is found in Weyl semimetals characterized by perfect electron-hole symmetry or…
The tunnel magnetoresistance (TMR) effect observed in magnetic tunnel junctions (MTJs) is commonly used in many spintronic applications because the effect can easily convert from local magnetic states to electric signals in a wide range of…