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相关论文: Thermoelectric properties of Mott insulator with c…

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The effect of correlated hopping on the charge and heat transport of strongly correlated particles is studied for the Falicov-Kimball model on the Bethe lattice. Exact solutions for the one particle density of states (DOS) and two particle…

强关联电子 · 物理学 2017-03-29 D. A. Dobushovskyi , A. M. Shvaika , V. Zlatić

The effect of correlated hopping on the charge and heat transport is investigated for the Falicov-Kimball model. Exact solutions for the electrical and thermal conductivities and thermoelectric power are obtained within the dynamical mean…

强关联电子 · 物理学 2014-12-23 A. M. Shvaika

The search for semiconductors with high thermoelectric figure of merit has been greatly aided by theoretical modeling of electron and phonon transport, both in bulk materials and in nanocomposites. Recent experiments have studied…

强关联电子 · 物理学 2015-06-25 Subroto Mukerjee , J. E. Moore

The extrapolation of finite-cluster calculations is used to examine properties of the one-dimensional Falicov-Kimball model with correla It is shown that the correlated hopping strongly influences both the transitions and the conducting…

强关联电子 · 物理学 2009-11-10 Hana Cencarikova , Pavol Farkasovsky

We show how a lightly doped Mott insulator has hugely enhanced electronic thermal transport at low temperature. It displays universal behavior independent of the interaction strength when the carriers can be treated as nondegenerate…

强关联电子 · 物理学 2015-06-11 V. Zlatić , J. K. Freericks

A new numerical method, recently developed to study ground states of the Falicov-Kimball model (FKM), is used to examine the effects of correlated hopping on the ground-state properties of this model in two dimensions. It is shown that the…

强关联电子 · 物理学 2009-11-07 Pavol Farkasovsky , Natalia Hudakova

We present a study of the temperature (T) dependence of the dc electrical conductivity of polyaniline pellets doped over a wide range. A crossover between low-T variable-range hopping and high-T nearest-neighbor hopping has been found below…

强关联电子 · 物理学 2012-12-11 Mirko Baćani , Mario Novak , Ivan Kokanović , Dinko Babić

We theoretically investigate the impact of correlated hopping on thermoelectric transport through a quantum dot coupled to ferromagnetic leads. Using the accurate numerical renormalization group method, we analyze the transport…

介观与纳米尺度物理 · 物理学 2026-03-11 Kacper Wrześniewski , Ireneusz Weymann

We present comparative theoretical investigation of thermoelectric power and Hall effect in the Hubbard model for correlated metal and Mott insulator (considered as prototype cuprate superconductor) for different concentrations of current…

强关联电子 · 物理学 2024-01-23 E. Z. Kuchinskii , N. A. Kuleeva , M. V. Sadovskii

The extrapolation of small-cluster exact-diagonalization calculations is used to examine the influence of correlated hopping on valence and metal-insulator transitions in the one-dimensional Falicov-Kimball model. It is shown that the…

强关联电子 · 物理学 2007-05-23 P. Farkasovsky

Unravelling the nature of doping-induced transition between a Mott insulator and a weakly correlated metal is crucial to understanding novel emergent phases in strongly correlated materials. For this purpose, we study the evolution of…

强关联电子 · 物理学 2018-03-14 Yao Wang , Brian Moritz , Cheng-Chien Chen , Thomas P. Devereaux , Krzysztof Wohlfeld

This paper presents numerical studies of the single hole tt't''J model that address the interplay between the kinetic energy of itinerant electrons and the exchange energy of local moments as of interest to doped Mott insulators. Due to…

强关联电子 · 物理学 2009-11-11 Tiago C. Ribeiro

We use the Hartree-Fock (HF) approximation with the charge-density-wave (CDW) instability to study the effect of correlated hopping on the stability of electronic ferroelectricity in the extended Falicov-Kimball model (FKM) in two…

强关联电子 · 物理学 2015-10-23 P. Farkašovský , J. Jurečková

By using a combination of detailed experimental studies and simple theoretical arguments, we identify a novel mechanism characterizing the hopping transport in the Mott insulating phase of Ca$_{2-x}$Sr$_x$RuO$_4$ near the metal-insulator…

强关联电子 · 物理学 2009-11-10 S. Nakatsuji , V. Dobrosavljevic , D. Tanaskovic , M. Minakata , H. Fukazawa , Y. Maeno

We study the doping-driven Mott metal-insulator transition for multi-orbital Hubbard models with Hund's exchange coupling at finite temperatures. As in the single-orbital Hubbard model, the transition is of first-order within dynamical mean…

强关联电子 · 物理学 2019-08-05 Jakob Steinbauer , Luca de' Medici , Silke Biermann

We show that lightly doped holes will be self-trapped in an antiferromagnetic spin background at low-temperatures, resulting in a spontaneous translational symmetry breaking. The underlying Mott physics is responsible for such novel…

强关联电子 · 物理学 2007-05-23 Su-Peng Kou , Z. Y. Weng

At low energy scales charge transport in the insulating Si:P is dominated by activated hopping between the localized donor electron states. Thus, theoretical models for a disordered system with electron-electron interaction are appropriate…

无序系统与神经网络 · 物理学 2008-03-03 Elvira Ritz , Martin Dressel

Optical conductivity spectra are studied for the Falicov-Kimball model with correlated hopping on the Bethe lattice. An expression for the current-current correlation function is derived using dynamical mean field theory. In the metallic…

强关联电子 · 物理学 2018-06-27 D. A. Dobushovskyi , A. M. Shvaika

The dynamic localization in energy space -- suppression of the absorption of energy from an external microwave field due to quantum interference -- was analyzed recently for a closed quantum dot in the absence of electron-electron…

介观与纳米尺度物理 · 物理学 2009-11-10 D. M. Basko

With the hierarchical Green's function approach, we study a doped Mott insulator described with the Hubbard model by analytically solving the equations of motion of an one-particle Green's function and related multiple-point correlation…

强关联电子 · 物理学 2020-01-29 Yu-Liang Liu
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