相关论文: Spatially-resolved luminescence and crystal struct…
Gallium nitride nanowires were grown on c-plane, r-plane and m-plane sapphire substrates in a showerhead metalorganic chemical vapor deposition system using nickel catalyst with trimethylgallium and ammonia as precursors. We studied the…
AlN layers with thicknesses between 2 and 14 nm were grown on Si(111) substrates by molecular beam epitaxy. The effect of the AlN layer thickness on the morphology and nucleation time of spontaneously formed GaN nanowires (NWs) was…
Nanobelts, nanoribbons and other quasi-one-dimensional nanostructures formed from layered, so-called, van der Waals semiconductors have garnered much attention due to their high-performance, tunable optoelectronic properties. For layered…
We demonstrate the self-assembled formation of AlN nanowires by molecular beam epitaxy on sputtered TiN films on sapphire. This choice of substrate allows growth at an exceptionally high temperature of 1180 {\deg}C. In contrast to previous…
Group IV Ge1-xSnx semiconductors hold the premise of enabling broadband silicon-integrated infrared optoelectronics due to their tunable bandgap energy and directness. Herein, we exploit these attributes along with the enhanced lattice…
We investigate the optical properties of InAs quantum dots grown by molecular beam epitaxy on GaAs(110) using Bi as a surfactant. The quantum dots are synthesized on planar GaAs(110) substrates as well as on the {110} sidewall facets of…
GaN/SiO2 core/shell nanowires are grown by cobalt phthalocyanine catalyst assisted vapor-liquid-solid route, in which Si wafer coated with a mixture of gallium and indium is used as the source for Ga and Si and ammonia is used as the…
We present a conceptually novel approach to achieve selective area epitaxy of GaN nanowires. The approach is based on the fact that these nanostructures do not form in plasma-assisted molecular beam epitaxy on structurally and chemically…
Development of fabrication protocols for large-area plasmonic nanostructures with sub-10 nm gaps with a spatially controlled distribution is critical for their real-world applications. In this work, we develop a simple, cleanroom-free…
We demonstrate Au-assisted vapor-solid-solid (VSS) growth of Ge nanowires (NWs) by molecular beam epitaxy (MBE) at 220 {\deg}C, which is compatible with the temperature window for Si-based integrated circuit. Low temperature grown Ge NWs…
We predict inelastic light scattering spectra from electron collective excitations in a coaxial quantum well embedded in a core-multishell GaAs/AlGaAs nanowire. The complex composition, the hexagonal cross section and the remote doping of…
The incubation time preceding nucleation and growth of surface nanostructures is interesting from a fundamental viewpoint but also of practical relevance as it determines statistical properties of nanostructure ensembles such as size…
The addition of boron to GaAs nanowires grown by self-catalyzed molecular beam epitaxy was found to have a strong effect on the nanowire morphology, with axial growth greatly reduced as the nominal boron concentration was increased.…
We report on the experimental realization of Pb1-xSnxTe pentagonal nanowires (NWs) with [110] orientation using molecular beam epitaxy techniques. Using first-principles calculations, we investigate the structural stability in NWs of SnTe…
We present a correlative study of structural and optical properties of natural defects in planar semiconductor microcavities grown by molecular beam epitaxy, which are showing a localized polariton spectrum as reported in Zajac et al.,…
We performed density-functional calculations to investigate the electronic structure of ZnO/GaN core/shell heterostructured nanowires (NWs) orientating along <0001> direction. The build-in electric filed arising from the charge…
The structures, as building-blocks for designing functional nanomaterials, have fueled the development of versatile nanoprobes to understand local structures of noncrystalline specimens. Progresses in analyzing structures of individual…
Photoconductors based on semiconducting thin films, nanowires and 2-dimensional atomic layers have been extensively investigated. But there is no explicit photogain equation that allows for fitting and designing photoresponses of these…
Germanium nanostructures offer significant potential in developing advanced integrated circuit and disruptive quantum technologies, yet achieving both scalability and high carrier mobility remains a challenge in materials science. Here, we…
Vapor-liquid-solid (VLS) route and its variants are routinely used for scalable synthesis of semiconducting nanowires yet the fundamental growth processes remain unknown. Here, we employ atomic-scale computations based on model potentials…