中文
相关论文

相关论文: Spatially-resolved luminescence and crystal struct…

200 篇论文

A true understanding of the properties of pnictide superconductors require the development of high-quality materials and performing measurements designed to unravel their intrinsic properties and short-range nematic correlations which are…

We present the direct heteroepitaxial growth of high-quality InGaAs quantum dots on silicon, enabling scalable, cost-effective quantum photonics devices compatible with CMOS technology. GaAs heterostructures are grown on silicon via a GaP…

介观与纳米尺度物理 · 物理学 2023-11-28 Imad Limame , Peter Ludewig , Ching-Wen Shih , Marcel Hohn , Chirag C. Palekar , Wolfgang Stolz , Stephan Reitzenstein

We study the dynamics of excitons in GaAs/(Al,Ga)As core-shell nanowires by continuous-wave and time-resolved photoluminescence and photoluminescence excitation spectroscopy. Strong Al segregation in the shell of the nanowires leads to the…

介观与纳米尺度物理 · 物理学 2016-10-19 Pierre Corfdir , Hanno Küpers , Ryan B. Lewis , Timur Flissikowski , Holger T. Grahn , Lutz Geelhaar , Oliver Brandt

Ordered Ag nanowire arrays with high aspect ratio and high density self-supporting Ag nanowire patterns were successfully prepared using potentiostatic electrodeposition within the confined nanochannels of a commercial porous anodic…

材料科学 · 物理学 2011-06-15 Baoliang Sun , Xiaohong Jiang , Shuxi Dai , Zuliang Du

We report on the photoluminescence characterization of GaAs quantum dots embedded into AlGaAs nano-wires. Time integrated and time resolved photoluminescence measurements from both an array and a single quantum dot/nano-wire are reported.…

Bi-containing III-V semiconductors constitute an exciting class of metastable compounds with wide-ranging potential optoelectronic and electronic applications. However, the growth of III-V-Bi alloys requires group-III-rich growth…

材料科学 · 物理学 2019-04-16 Miriam Oliva , Guanhui Gao , Esperanza Luna , Lutz Geelhaar , Ryan B. Lewis

We consider the interaction of electromagnetic radiation of arbitrary polarization with multi-level atoms in a self-consistent manner, taking into account both spatial and temporal dependencies of local fields. This is done by numerically…

介观与纳米尺度物理 · 物理学 2015-03-19 Maxim Sukharev , Abraham Nitzan

Solution-phase bottom up self-assembly of nanocrystals into superstructures such as ordered superlattices is an attractive strategy to generate functional materials of increasing complexity, including very recent advances that incorporate…

We investigate the properties of electronic states and optical transitions in hexagonal GaAs quantum dots within AlGaAs nanowires. Such dots are particularly interesting due to their high degree of symmetry. A streamlined postsymmetrization…

介观与纳米尺度物理 · 物理学 2015-11-18 Guro K. Svendsen , Johannes Skaar , Helge Weman , Marc-André Dupertuis

We present a theoretical study of Ge-core/Si-shell nanocrystals in a wide bandgap matrix and compare the results with experimental data obtained from the samples prepared by co-sputtering. The empirical tight-binding technique allows us to…

介观与纳米尺度物理 · 物理学 2017-03-07 M. O. Nestoklon , A. N. Poddubny , P. Voisin , K. Dohnalova

We study the molecular beam epitaxy of self-assembled Al$\mathrm{_{1-x}}$Sc$\mathrm{_{x}}$N nanowires on conductive TiN layers and demonstrate their application in piezoelectric nanogenerators. Wurtzite Al$\mathrm{_{1-x}}$Sc$\mathrm{_{x}}$N…

Deciphering the three-dimensional atomic structure of solid-solid interfaces in core-shell nanomaterials is the key to understand their remarkable catalytical, optical and electronic properties. Here, we probe the three-dimensional atomic…

材料科学 · 物理学 2023-06-21 Zezhou Li , Zhiheng Xie , Yao Zhang , Xilong Mu , Hai-jing Yin , Ya-wen Zhang , Colin Ophus , Jihan Zhou

Achieving high crystalline quality Ge$_{1-x}$Sn$_{x}$ semiconductors at Sn content exceeding 10\% is quintessential to implementing the long sought-after silicon-compatible mid-infrared photonics. Herein, by using sub-20 nm Ge nanowires as…

We present a unified model of compound semiconductor growth based on kinetic Monte Carlo simulations in tandem with new experimental results that can describe and predict the mechanisms for the formation of various types of nanostructures…

III-V semiconductor nanowires are considered promising building blocks for advanced photonic devices. One of the key advantages is that the lattice mismatch can easily be accommodated in 1D structures, resulting in superior heteroepitaxial…

As a system with both profound physics and promising application potentials, the strain-induced self-assembled semiconductor nanostructures have been investigated for decades of years. The optical and electrical properties of this system…

材料科学 · 物理学 2022-10-06 H. Y. Zhang , Y. H. Chen , Z. G. Wang

In-medium effective carriers with position-dependent mass in a multishell heterostructure are analytically studied. We obtain the exact spectrum of three-dimensional bound eigenstates and the scattering wave-functions for several von Roos…

介观与纳米尺度物理 · 物理学 2024-10-10 H. R. Christiansen , R. M. Lima

We show that fully self-assembled optically-active quantum dots (QDs) embedded in MBE-grown GaAs/AlGaAs core-shell nanowires (NWs) are coupled to the NW mechanical motion. Oscillations of the NW modulate the QD emission energy in a broad…

介观与纳米尺度物理 · 物理学 2014-08-22 M. Montinaro , G. Wüst , M. Munsch , Y. Fontana , E. Russo-Averchi , M. Heiss , A. Fontcuberta i Morral , R. J. Warburton , M. Poggio

We exploit ferromagnetic imprinting to create complex laterally defined regions of nuclear spin polarization in lithographically patterned MnAs/GaAs epilayers grown by molecular beam epitaxy (MBE). A time-resolved Kerr rotation microscope…

介观与纳米尺度物理 · 物理学 2009-11-10 J. Stephens , R. K. Kawakami , J. Berezovsky , M. Hanson , D. P. Shepherd , A. C. Gossard , D. D. Awschalom

We report on the structural properties of Ge_(1-x)Mn_x layers grown by molecular beam epitaxy. In these layers, nanocolumns with a high Mn content are embedded in an almost-pure Ge matrix. We have used grazing-incidence X-ray scattering,…