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The presence of defects such as vacancies in solids has prominent effects on their mechanical properties. It not only modifies the stiffness and strength of materials, but also changes their morphologies. The latter effect is extremely…

介观与纳米尺度物理 · 物理学 2015-08-13 Zhigong Song , Zhiping Xu

Graphene epitaxially grown on Ru(0001) displays a remarkably ordered pattern of hills and valleys in Scanning Tunneling Microscopy (STM) images. To which extent the observed "ripples" are structural or electronic in origin have been much…

Upon cooling, branched line defects develop in epitaxial graphene grown at high temperature on Pt(111) and Ir(111). Using atomically resolved scanning tunneling microscopy we demonstrate that these defects are wrinkles in the graphene…

Atomic resolution high angle annular dark field imaging of suspended, single-layer graphene, onto which the metals Cr, Ti, Pd, Ni, Al and Au atoms had been deposited was carried out in an aberration corrected scanning transmission electron…

介观与纳米尺度物理 · 物理学 2012-08-02 Quentin M. Ramasse , Recep Zan , Ursel Bangert , Danil W. Boukhvalov , Young-Woo Son , Konstantin S. Novoselov

Defects in graphene are both a boon and a bane for applications - they can induce uncontrollable effects but can also provide novel ways to manipulate the properties of pristine graphene. Nanoporous Graphene, which contains nanoscopic…

材料科学 · 物理学 2023-10-09 Ji Wei Yoon

One-dimensional defects in graphene have strong influence on its physical properties, such as electrical charge transport and mechanical strength. With enhanced chemical reactivity, such defects may also allow us to selectively…

Strains strongly affect the properties of low-dimensional materials, such as graphene. By combining in situ, in operando, reflection high energy electron diffraction experiments with first-principles calculations, we show that large…

材料科学 · 物理学 2013-09-03 Nils Blanc , Fabien Jean , Arkady V. Krasheninnikov , Gilles Renaud , Johann Coraux

Defects in solid commonly limit mechanical performance of the material. However, recent measurements reported that the extraordinarily high strength of graphene is almost retained with the presence of grain boundaries. We clarify in this…

介观与纳米尺度物理 · 物理学 2014-02-06 Zhigong Song , Jian Wu , Zhiping Xu

The influence of a topological defect in graphene on the ground state of electronic quasiparticle excitations is studied in the framework of the long-wavelength continuum model originating in the tight-binding approximation for the nearest…

强关联电子 · 物理学 2016-10-06 Yu. A. Sitenko , N. D. Vlasii

Topological defects can affect the physical properties of graphene in unexpected ways. Harnessing their influence may lead to enhanced control of both material strength and electrical properties. Here we present a new class of topological…

Topological defects (e.g. pentagons, heptagons and pentagon-heptagon pairs) have been widely observed in large scale graphene and have been recognized to play important roles in tailoring the mechanical and physical properties of…

介观与纳米尺度物理 · 物理学 2018-03-02 Bo Ni , Teng Zhang , Jiaoyan Li , Xiaoyan Li , Huajian Gao

Graphene is one of the most promising 2D materials for various applications due to its unique electronic properties and high thermal stability. In previous studies, it was shown that when graphene is deposited onto some transition metal…

材料科学 · 物理学 2018-02-13 Tianbai Li , Jory A. Yarmoff

Defects play a key role in the electronic structure of graphene layers flat or curved. Topological defects in which an hexagon is replaced by an n-sided polygon generate long range interactions that make them different from vacancies or…

强关联电子 · 物理学 2008-11-26 Alberto Cortijo , María A. H. Vozmediano

Specific types of spatial defects or potentials can turn monolayer graphene into a topological material. These topological defects are classified by a spatial dimension $D$ and they are systematically obtained from the Hamiltonian by means…

介观与纳米尺度物理 · 物理学 2023-08-16 Amit Goft , Yuval Abulafia , Nadav Orion , Claude L. Schochet , Eric Akkermans

Topological defects in graphene, dislocations and grain boundaries, are still not well understood despites the considerable number of experimental observations. We introduce a general approach for constructing dislocations in graphene…

介观与纳米尺度物理 · 物理学 2010-05-21 Oleg V. Yazyev , Steven G. Louie

Understanding the coupling of graphene with its local environment is critical to be able to integrate it in tomorrow's electronic devices. Here we show how the presence of a metallic substrate affects the properties of an atomically…

介观与纳米尺度物理 · 物理学 2015-05-27 M. M. Ugeda , D. Fernández-Torre , I. Brihuega , P. Pou , A. J. Martínez-Galera , R. Pérez , J. M. Gómez-Rodríguez

Well-known effect of mechanical stiffness degradation under the influence of point defects in macroscopic solids can be controversially reversed in the case of low-dimensional materials. Using atomistic simulation, we showed here that a…

介观与纳米尺度物理 · 物理学 2015-08-18 Dmitry G. Kvashnin , Pavel B. Sorokin

The interaction of Stone-Wales topological defects in graphene has been studied through computer simulation. This simulation has revealed configurations of two defects with energies below the energy of a monolayer with two spaced defects.…

介观与纳米尺度物理 · 物理学 2016-11-18 A. I. Podlivaev , L. A. Openov

Graphene, being one-atom thick, is extremely sensitive to the presence of adsorbed atoms and molecules and, more generally, to defects such as vacancies, holes and/or substitutional dopants. This property, apart from being directly usable…

材料科学 · 物理学 2011-04-08 Rocco Martinazzo , Simone Casolo , Gian Franco Tantardini

Low-energy electron microscopy (LEEM) reveals a new mode of graphene growth on Ru(0001) in which Ru atoms are etched from a step edge and injected under a growing graphene sheet. Based on density functional calculations, we propose a model…

材料科学 · 物理学 2010-12-14 E. Loginova , S. Maier , I. Stass , N. C. Bartelt , P. J. Feibelman , M. Salmeron , K. F. McCarty
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