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Although chemical vapor deposition (CVD) is one of the preferred routes to synthetic diamond crystals, a full knowledge of the point defects produced during growth is still incomplete. Here we exploit the charge and spin properties of…

Nanodiamonds (NDs) containing silicon vacancy (SiV) defects were evaluated as a potential biomarker for the labeling and fluorescent imaging of neural precursor cells (NPCs). SiV-containing NDs were synthesized using chemical vapor…

There is a continuous search for solid-state spin qubits operating at room temperature with excitation in the IR communication bandwidth. Recently we have introduced the photoelectric detection of magnetic resonance (PDMR) to read the…

We investigate nonlinear optical absorption in diamond crystals containing high densities of nitrogen vacancy (NV) centers using open-aperture Z-scan measurements with 230 fs laser pulses at 1032 nm, within the transparency window of…

The diamond nitrogen vacancy (NV) center remains an ever increasing topic of interest. At present, it is considered an ideal example of a solid-state qubit applicable in quantum communication, computing, and sensing alike. With its success,…

Formation and excitation energies as well charge transition levels, are determined forthe substitutional nitrogen (Ns),the vacancy (V) and related point defects (NV, NVH, N2, N2V and V2) by screened non-local hybrid density functional…

Point defects in semiconductors are becoming central to quantum technologies. They can be used as spin qubits interfacing with photons, which are fundamental for building quantum networks. Currently, the most prominent quantum defect in…

The neutrally-charged silicon vacancy in diamond is a promising system for quantum technologies that combines high-efficiency, broadband optical spin polarization with long spin lifetimes (T2 ~ 1 ms at 4 K) and up to 90% of optical emission…

Electrically driven emission from negatively charged silicon-vacancy, (SiV)- centres in single crystal diamond is demonstrated. The SiV centres were generated using ion implantation into an intrinsic (i) region of a p-i-n single crystal…

Neutral silicon vacancy centers (SiV0) in diamond are promising candidates for quantum networks because of their long spin coherence times and stable, narrow optical transitions. However, stabilizing SiV0 requires high purity, boron doped…

The negatively charged nitrogen-vacancy defect (NV)$^-$ in diamond has attracted much attention in recent years in qubit and biological applications. The negative charge is donated from nearby nitrogen donors that could limit or stem the…

Vacancy centers in diamond have proven to be a viable solid-state platform for quantum coherent opto-electronic applications. Among the variety of vacancy centers, silicon-vacancy (SiV) centers have recently attracted much attention as an…

Although the spin properties of superficial shallow nitrogen-vacancy (NV) centers have been the subject of extensive scrutiny, considerably less attention has been devoted to studying the dynamics of NV charge conversion near the diamond…

The fluorescent nitrogen-vacancy (NV) defect in diamond has remarkable photophysical properties, including high photostability, which allows stable fluorescence emission for hours; as a result, there has been much interest in using…

It is suggested that the substitutional nitrogen in diamonds bonded to three of the surrounding carbon atoms instead of four. This proposed electron configuration of the defect is deduced from previous experiments and theoretical…

The magnetic and electrical properties of nitrogen doped diamond system have been studied within the framework of a density functional theoretical approach. Spin-polarised calculations reveal that only the nitrogen doped system with…

The nitrogen-vacancy (NV) center in diamond is a heavily studied defect due to its potential applications to quantum metrology and computation, particularly in ambient conditions. The key mechanism to using the NV in any application lies in…

Optically-active spin qubits in wide-bandgap semiconductors exist in several charge states, though typically only specific charge states exhibit desirable spin or photonic properties. An understanding of how interconversion between…

The nitrogen vacancy (NV) center is a defect in diamond whose spin state can be read optically by exploiting its photoluminescence or electrically by exploiting its charge generation rate under illumination, both of which being…

Deep defects in wide band gap semiconductors have emerged as leading qubit candidates for realizing quantum sensing and information applications. Due to the spatial localization of the defect states, these deep defects can be considered as…