相关论文: Temperature Dependence of Volatile Current shoot-u…

Neural network surrogate models for constitutive laws in computational mechanics have been in use for some time. In plasticity, these models often rely on gated recurrent units (GRUs) or long short-term memory (LSTM) cells, which excel at…

Dynamic Random Access Memory (DRAM) is the de-facto choice for main memory devices due to its cost-effectiveness. It offers a larger capacity and higher bandwidth compared to SRAM but is slower than the latter. With each passing generation,…

Recently significant attention has been paid to magnetic-field-dependent photoluminescence (PL) features of the negatively charged nitrogen-vacancy (NV) centers in diamond. These features are used for microwave-free sensing and are…

Resistance Random Access Memory (RRAMTM) device, with its electrically induced nanoscale resistive switching capacity, has been gaining considerable attention as future non-volatile memory device. Here, we propose a mechanism of switching…

Resistive random access memory (RRAM) is a promising candidate for next-generation nonvolatile memory (NVM) and in-memory computing applications. Compact models are essential for analyzing the circuit and system-level performance of…

Negative differential resistance (NDR) behavior observed in several transition metal oxides is crucial for developing next-generation memory devices and neuromorphic computing systems. NbO2-based memristors exhibit two regions of NDR at…

A new model of a symmetric two-terminal non-volatile RRAM device based on Perovskite oxide thin film materials, specifically Pr1-xCaxMnO3 (PCMO), is proposed and analyzed. The model consists of two identical half-parts, which are completely…

Non-volatile memory (NVM) devices that reliably operate at temperatures above 300 $^\circ$C are currently non-existent and remains a critically unmet challenge in the development of high-temperature (T) resilient electronics, necessary for…

The equilibrium ON and OFF states of resistive random access memory (RRAM) are due to formation and destruction of a conducting filament. The laws of thermodynamics dictate that these states correspond to the minimum of free energy. Here,…

Magnetic Random-Access Memory (MRAM) based p-bit neuromorphic computing devices are garnering increasing interest as a means to compactly and efficiently realize machine learning operations in Restricted Boltzmann Machines (RBMs). When…

The transition voltage of an abrupt metal-insulator transition (MIT), observed by applying an electric field to two-terminal devices fabricated on a Mott insulator VO_2 film, decreases with increasing temperature up to 334K. The abrupt…

Continuous improvement in silicon process technologies has made possible the integration of hundreds of cores on a single chip. However, power and heat have become dominant constraints in designing these massive multicore chips causing…

The negative differential resistance (NDR) response of Nb/NbOx/Pt cross-point devices is shown to have a polarity dependence due to the effect of the metal/oxide Schottky barriers on the contact resistance. Three distinct responses are…

Resistive random-access memory (RRAM) is gaining popularity due to its ability to offer computing within the memory and its non-volatile nature. The unique properties of RRAM, such as binary switching, multi-state switching, and device…

We present a comprehensive phenomenological model for the crossbar integrated metal-oxide continuous-state memristors. The model consists of static and dynamic equations, which are obtained by fitting a large amount of experimental data,…

The perpendicular shape anisotropy-spin transfer torque-magnetic random access memories (PSASTT-MRAMs) takes advantage of the nanopillar free-layer geometry for securing a good thermal stability factor from the shape anisotropy of the…

Much effort has been devoted to device and materials engineering to realize nanoscale resistance random access memory (RRAM) for practical applications, but there still lacks a rational physical basis to be relied on to design scalable…

We report device level damping measurements using spin-torque driven ferromagnetic resonance on perpendicular magnetic random-access memory (MRAM) cells. It is shown that thermal agitation enhances the apparent damping for cells smaller…

Emerging non-volatile memories have been proposed for a wide range of applications from easing the von-Neumann bottleneck to neuromorphic applications. Specifically, scalable RRAMs based on Pr$_{1-x}$Ca$_x$MnO$_3$ (PCMO) exhibit analog…

The Plastic Scintillator Detector (PSD) is one of the main sub-detectors in the DArk Matter Particle Explorer (DAMPE) project. It will be operated over a large temperature range from -$10$ to $30^{\circ}$C, so the temperature effect of the…