相关论文: Temperature Dependence of Volatile Current shoot-u…
We report on DC and pulsed electric field sensitivity of the resistance of mixed valent Mn oxide based La(5/8-y)Pr(y)Ca(3/8)MnO(3) (y = 0.4) single crystals as a function of temperature. The low temperature regime of the resistivity is…
Accurate prediction of physical fields is critical in various engineering applications, including thermal management in electronic systems, airfoil shape optimization in aerospace, and flow field control in hypersonic vehicles. This study…
We operate a nitrogen vacancy (NV-) diamond magnetometer at ambient temperatures and study the dependence of its bandwidth on experimental parameters including optical and microwave excitation powers. We introduce an analytical theory that…
In lean premixed combustors, flame stabilization is an important operational concern that can affect efficiency, robustness and pollutant formation. The focus of this paper is on flame lift-off and re-attachment to the nozzle of a swirl…
We report on resistive switching (RS) characteristics of W/WO3-x/Pt-based thin film memristors modulated by precisely controlled oxygen non-stoichiometry. RS properties of the devices with varied oxygen vacancy (VO) concentration have been…
Dissipative particle dynamics (DPD) is a well-established mesoscale simulation method. However, there have been long-standing ambiguities regarding the dependence of its (purely repulsive) force field parameter on temperature as well as the…
Wearable health devices have a strong demand in real-time biomedical signal processing. However traditional methods often require data transmission to centralized processing unit with substantial computational resources after collecting it…
A critical issue affecting filamentary resistive random access memory (RRAM) cells is the requirement of high voltages during electroforming. Reducing the magnitude of these voltages is of significant interest, as it ensures compatibility…
Power consumption is the main limitation in the development of new high performance random access memory for portable electronic devices. Magnetic RAM (MRAM) with CoFeB/MgO based magnetic tunnel junctions (MTJs) is a promising candidate for…
Resistive switching (RS) effect observed in capacitor-like metal/insulator/metal junctions belongs to the most promising candidates for next generation of memory cell technology. It is based upon a sudden change of the junction resistance…
Micro-mechanical resonator performance is fundamentally limited by the coupling to a thermal environment. The magnitude of this thermodynamical effect is typically considered in accordance with a physical temperature, assumed to be uniform…
Dynamic mechanical analysis (DMA) measurements as a function of temperature, frequency, and dynamic force amplitude are used to perform a detailed study of the domain wall motion in LaAlO3. In previous DMA measurements Harrison et al.[Phys.…
We measure power dissipation in phase change memory (PCM) devices by scanning Joule ex-pansion microscopy (SJEM) with ~50 nm spatial and 0.2 K temperature resolution. The temperature rise in the Ge2Sb2Te5 (GST) is dominated by Joule…
We have studied the transport properties of a molecular device composed of donor and acceptor moieties between two electrodes on either side. The device is considered to be one-dimensional with different on-site energies and the…
Temperature dependence of thermopower in the multiorbital Hubbard model is studied by using the dynamical mean-field theory with the non-crossing approximation impurity solver. It is found that the Coulomb interaction, the Hund coupling,…
The nitrogen-vacancy (NV) center in diamond is well known in quantum metrology and quantum information for its favorable spin and optical properties, which span a wide temperature range from near zero to over 600 K. Despite its prominence,…
Due to many limitations of Von Neumann architecture such as speed, memory bandwidth, efficiency of global interconnects and increase in the application of artificial neural network, researchers have been pushed to look into alternative…
As the demand for computational power increases, high-bandwidth memory (HBM) has become a critical technology for next-generation computing systems. However, the widespread adoption of HBM presents significant thermal management challenges,…
Under certain conditions, applying a sequence of voltage pulses of alternating polarities across a resistive switching memory device induces a finite number of fixed-point attractors in its time-averaged dynamics, known as dynamical…
Phase change memory (PCM) is a rapidly growing technology that not only offers advancements in storage-class memories but also enables in-memory data storage and processing towards overcoming the von Neumann bottleneck. In PCMs, the primary…