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Ferromagnetic transitions between quantum Hall states with different polarization at a fixed filling factor can be studied by varying the ratio of cyclotron and Zeeman energies in tilted magnetic field experiments. However, an ability to…

We present a density-functional theory (DFT) study of the structural, electronic, and chemical bonding behaviour in germanium (Ge)-doped vanadium dioxide (VO$_2$). Our motivation is to explain the reported increase of the metal-insulator…

材料科学 · 物理学 2023-02-03 Peter Mlkvik , Claude Ederer , Nicola A. Spaldin

Polar metals characterized by the simultaneous coexistence of ferroelectric distortions and metallicity have attracted tremendous attention. Developing such materials at low dimensions remains challenging since both conducting electrons and…

材料科学 · 物理学 2020-03-24 Tao Xu , Jingtong Zhang , Yuquan Zhu , Jie Wang , Takahiro Shimada , Takayuki Kitamura , Tong-Yi Zhang

Electrically controllable magnetism, which requires the field-effect manipulation of both charge and spin degrees of freedom, has attracted growing interests since the emergence of spintronics. In this work, we report the reversible…

应用物理 · 物理学 2018-04-11 L. Liang , Q. H. Chen , J. M. Lu , W. Talsma , J. Shan , G. R. Blake , T. T. M. Palstra , J. T. Ye

Eutectics of Sapphire/Yttrium-Aluminum garnet and Ce-doped Sapphire/Yttrium-Aluminum garnet (Ce up to 1 at.%) with a Chinese script microstructure were obtained by the method of horizontal directional crystallization in a carbon-containing…

材料科学 · 物理学 2024-12-10 L. O. Hryn , Yu. V. Siryk , V. V. Baranov , O. M. Vovk , S. V. Naydenov , S. V. Nizhankovsky

Electrostatic gating is essential for defining and control of semiconducting devices. However, nano-fabrication processes required for depositing gates inevitably degrade the pristine quality of the material of interest. Examples of…

介观与纳米尺度物理 · 物理学 2016-08-22 Arjan J. A. Beukman , Fanming Qu , Ken W. West , Loren N. Pfeiffer , Leo P. Kouwenhoven

We have developed a new magnetoelectric material based on Ga doped {\alpha}-Fe2O3 in rhombohedral phase. The material is a canted ferromagnet at room temperature and showing magneto-electric properties. The experimental results of electric…

材料科学 · 物理学 2018-05-23 R. N. Bhowmik , Abdul Gaffar Lone

Doping dependence of the superconducting state structure and spin-fluctuation pairing mechanism in the $Ba(Fe_{1-x}Co_{x})_{2}As_{2}$ family is studied. BCS-like analysis of experimental data shows that in the overdoped regime, away from…

超导电性 · 物理学 2019-02-20 A. E. Karakozov , M. V. Magnitskaya , L. S. Kadyrov , B. P. Gorshunov

Here we establish a more complete phase diagram for FeSe system, based on experimental results of nonstoichiometric Fe1-xSe single crystals that we have developed recently, as well as nearly stoichiometric FeSe single crystals. The…

In the iron-based superconductors, understanding the relation between superconductivity and electronic structure upon doping is crucial for exploring the pairing mechanism. Recently it was found that in iron selenide (FeSe), enhanced…

超导电性 · 物理学 2017-08-21 M. Q. Ren , Y. J. Yan , X. H. Niu , R. Tao , D. Hu , R. Peng , B. P. Xie , J. Zhao , T. Zhang , D. L. Feng

$Na_xCoO_2$ has a fascinating and complex magnetic phase diagram that can be further manipulated by doping. Here, we investigated the effect of electron doping on the magnetic coupling among $Co^{4+}$ ions in $Na_xCoO_2$ using density…

材料科学 · 物理学 2019-10-11 M. H. N. Assadi , S. Li , R. K. Zheng , S. P. Ringer , A. B. Yu

Effect of doping of graphene either by Boron (B), Nitrogen (N) or co-doped by B and N is studied using density functional theory. Our extensive band structure and density of states calculations indicate that upon doping by N (electron…

介观与纳米尺度物理 · 物理学 2012-07-31 Sugata Mukherjee , T. P. Kaloni

An interface between an oxide and an electrolyte gives rise to various processes as exemplified by electrostatic charge accumulation/depletion and electrochemical reactions such as intercalation/decalation under electric field. Here we…

材料科学 · 物理学 2016-08-12 Shinichi Nishihaya , Masaki Uchida , Yusuke Kozuka , Yoshihiro Iwasa , Masashi Kawasaki

Here we demonstrate the occurrence of robust itinerant ferromagnetism in Mott-Hubbard systems at both low and high doping concentrations. Specifically, we study the effect of hole doping on the experimentally synthesized LaCrAsO via…

强关联电子 · 物理学 2024-07-02 Zhao Liu , Nikhil V. Medhekar

In high-superconducting transition temperature ($T_{\rm c}$) iron-based superconductors, interband sign reversal ($s_{\rm \pm}$) and sign preserving ($s_{\rm ++}$) $s$-wave superconducting states have been primarily discussed as the…

超导电性 · 物理学 2016-01-14 T. Urata , Y. Tanabe , K. K. Huynh , Y. Yamakawa , H. Kontani , K. Tanigaki

In this work, we explore the impact of spatially controlled Zr and Al heterogeneous co-doping in HfO$_2$ thin films tailored for metal-ferroelectric-insulator-semiconductor (MFIS) gate stacks of ferroelectric field effect transistors…

We demonstrate how weak hybridization can lead to apparent heavy doping of 2d materials even in case of physisorptive binding. Combining ab-intio calculations and a generic model we show that strong reshaping of Fermi surfaces and changes…

介观与纳米尺度物理 · 物理学 2016-09-02 T. O. Wehling

The nature of a metal--insulator transition tuned by external gates in quantum Hall (QH) systems with point constrictions at integer bulk filling, as reported in recent experiments of Roddaro et al. [1], is addressed. We are particularly…

介观与纳米尺度物理 · 物理学 2007-05-23 Emiliano Papa , Tilo Stroh

We find, through first-principles calculations, that hole doping induces a ferromagnetic phase transition in monolayer GaSe. Upon increasing hole density, the average spin magnetic moment per carrier increases and reaches a plateau near 1.0…

介观与纳米尺度物理 · 物理学 2015-06-17 Ting Cao , Zhenglu Li , Steven G. Louie

The antiferromagnetic ground state and the metamagnetic transition to the ferromagnetic state of CsCl-ordered FeRh epilayers have been characterized using Hall and magnetoresistance measure- ments. On cooling into the ground state, the…

强关联电子 · 物理学 2015-03-20 M. A. de Vries , M. L. Loving , A. P. Mihai , L. H. Lewis , D. Heiman , C. H. Marrows