相关论文: AlN Combined Overtone Resonators for the 5G mmWave…

This work reports on the modeling, fabrication, and experimental characterization of a 13 GHz 30% Scandium-doped Aluminum Nitride (ScAlN) Overmoded Bulk Acoustic Resonator (OBAR) for high-frequency Radio Frequency (RF) applications, notably…

In the last decades, Bulk-Acoustic-Wave (BAW) filters have been essential components of 1G-to-4G radios. These devices rely on the high electromechanical coupling coefficient (kt2~7%), attained by Aluminum Nitride (AlN)…

Bulk Acoustic Wave (BAW) filters find applications in radio frequency (RF) communication systems for Wi-Fi, 3G, 4G, and 5G networks. In the beyond-5G (potential 6G) era, high frequency bands (>8 GHz) are expected to require resonators with…

Aluminum nitride (AlN) has been widely used in microeletromechanical resonators for its excellent electromechanical properties. Here we demonstrate the use of AlN as an optomechanical material that simultaneously offer low optical and…

We demonstrate wideband integrated photonic circuits in sputter-deposited aluminum nitride (AlN) thin films. At both near-infrared and visible wavelengths, we achieve low propagation loss in integrated waveguides and realize high-quality…

This work describes sputtered scandium aluminum nitride (ScAlN) thin-film bulk acoustic resonators (FBAR) at millimeter wave (mmWave) with high quality factor (Q) using platinum (Pt) electrodes. FBARs with combinations of Pt and aluminum…

Ternary compounds obtained by alloying wurtzite AlN with transition metals have emerged as promising materials with significantly enhanced piezoelectric characteristics relative to binary AlN. The increased electromechanical coupling in…

This work reports on the measured performance of an Aluminum Scandium Nitride (AlScN) Two-Dimensional Resonant Rods resonator (2DRR), fabricated by using a Sc-doping concentration of 24%, characterized by a low off-resonance impedance (~25…

Development of chip-scale optical frequency comb with the coverage from ultra-violet (UV) to mid-infrared (MIR) wavelength is of great significance. To expand the comb spectrum into the challenging UV region, a material platform with high…

In this work, we demonstrate the first single-crystal aluminum nitride (AlN) wafer-based thickness-extensional (TE) mode bulk acoustic resonator for piezoelectric power conversion. The device exhibits a high series resonance 3-dB quality…

This abstract presents an aluminum nitride (AlN) piezoelectric actuator for tuning optical resonance modes of silicon nitride photonic resonators. The AlN actuator is fabricated on top of a thick silicon dioxide cladding that encapsulates…

This work reports a millimeter wave (mmWave) thin-film bulk acoustic resonator (FBAR) in sputtered scandium aluminum nitride (ScAlN). This paper identifies challenges of frequency scaling sputtered ScAlN into mmWave and proposes a stack and…

This work presents a new class of micro-electro-mechanical system (MEMS) resonators toward Ka band (26.5-40GHz) for fifth-generation (5G) wireless communication. Resonant frequencies of 21.4 and 29.9 GHz have been achieved using the fifth…

Silicon photonics has offered a versatile platform for the recent development of integrated optomechanical circuits. However, silicon is limited to wavelengths above 1100 nm and does not allow device operation in the visible spectrum range…

This work describes sputtered scandium aluminum nitride (ScAlN) thin-film bulk acoustic resonators (FBAR) at 12.5 GHz with high electromechanical coupling (k2) of 9.5% and quality factor (Q) of 208, resulting in a figure of merit (FoM, Qk2)…

We demonstrate a record-high 62.6 GHz solidly mounted acoustic resonator (SMR) incorporating a 67.6 nm scandium aluminum nitride (Sc0.3Al0.7N) piezoelectric layer on a 40 nm buried platinum (Pt) bottom electrode, positioned above an…

Aluminum nitride is an appealing nonlinear optical material for on-chip wavelength conversion. Here we report optical frequency comb generation from high quality factor aluminum nitride micro-ring resonators integrated on silicon…

Aluminum nitride (AlN)-based thin-film bulk acoustic wave resonators (FBARs) are promising compact platforms for 6G communications and quantum memory hardware, enabled by their integrable acoustic modes with high quality factors. However,…

A fabrication process is developed to grow c-axis textured aluminum nitride (AlN) films on the sidewall of single crystal silicon (Si) micro-fins to realize fin bulk acoustic wave resonators (FinBAR). FinBARs enable ultra-dense integration…

We report the first investigation on continuous-wave Raman lasing in high-quality-factor aluminum nitride (AlN) microring resonators. Although wurtzite AlN is known to exhibit six Raman-active phonons, single-mode Raman lasing with low…