中文
相关论文

相关论文: Interaction-induced crossover between weak anti-lo…

200 篇论文

InSb is one of the promising candidates to realize a topological state through proximity induced superconductivity in a material with strong spin-orbit interactions. In two-dimensional systems, thin barriers are needed to allow strong…

We study the localization properties in the transition from a two-dimensional electron gas at zero magnetic field into an integer quantum Hall (QH) liquid. By carrying out a direct calculation of the localization length for a finite size…

凝聚态物理 · 物理学 2009-10-28 D. Z. Liu , X. C. Xie , Q. Niu

Recent experiments on type-II Weyl semimetals such as WTe$_2$, MoTe$_2$, Mo$_x$W$_{1-x}$Te$_2$ and WP$_2$ reveal remarkable transport properties in presence of a strong magnetic field, including an extremely large magnetoresistance and an…

介观与纳米尺度物理 · 物理学 2018-09-19 Maximilian Trescher , Emil J. Bergholtz , Johannes Knolle

We show that the ground state of a weakly charged two-dimensional electron-hole fluid in a strong magnetic field is a broken translation symmetry state with interpenetrating lattices of localized vortices and antivortices in the…

介观与纳米尺度物理 · 物理学 2025-05-28 Bo Zou , Allan H. MacDonald

We have studied the tunneling properties of GaSb/AlSb/InAs/AlSb/GaSb heterostructures, in which electrons and holes accumulate in the InAs and GaSb regions respectively, under a magnetic field parallel to the interfaces. The low-temperature…

介观与纳米尺度物理 · 物理学 2009-11-07 Y. Lin , E. E. Mendez , A. G. Abanov

Magnetotransport phenomena often provide critically important information about two-dimensional (2D) electron systems. For example, the independence of magneto-photo-resistance of 2D electrons in best-quality quantum wells on the…

介观与纳米尺度物理 · 物理学 2025-07-11 P. S. Alekseev , A. P. Alekseeva

We investigate transport and Coulomb drag properties of semiconductor-based electron-hole bilayer systems. Our calculations are motivated by recent experiments in undoped electron-hole bilayer structures based on GaAs-AlGaAs gated double…

介观与纳米尺度物理 · 物理学 2008-09-16 E. H. Hwang , S. Das Sarma

We studied InSb quantum well devices using Landau level tunneling spectroscopy through a three-terminal differential conductance technique. This method is similar to filled state scanning tunneling microscopy but uses a stationary contact…

介观与纳米尺度物理 · 物理学 2025-08-26 S. K. Clowes , C. P. Allford , D. Shearer , G. V. Smith , R. Simmons , B. N. Murdin , U. Zeitler , P. D. Buckle

We study interaction-induced localization of electrons in an inhomogeneous quasi-one-dimensional system--a wire with two regions, one at low density and the other high. Quantum Monte Carlo techniques are used to treat the strong Coulomb…

介观与纳米尺度物理 · 物理学 2011-09-02 A. D. Guclu , C. J. Umrigar , Hong Jiang , H. U. Baranger

We study numerically the edge magnetoconductance of a quantum spin Hall insulator in the presence of quenched nonmagnetic disorder. For a finite magnetic field B and disorder strength W on the order of the bulk gap E_g, the conductance…

介观与纳米尺度物理 · 物理学 2010-10-08 Joseph Maciejko , Xiao-Liang Qi , Shou-Cheng Zhang

We report on a theoretical study of the transport properties of two coupled two-dimensional electron systems subject to in-plane magnetic fields. The charge redistribution in double wells induced by the Lorenz force in crossed electric and…

介观与纳米尺度物理 · 物理学 2009-11-07 J. Kolorenc , L. Smrcka , P. Streda

An ultradense 2D electron system can be realized by adsorbing PH$_3$ precursor molecules onto an atomically clean Si surface, followed by epitaxial Si overgrowth. By controlling the PH$_3$ coverage the carrier density of such system can…

凝聚态物理 · 物理学 2007-05-23 M. A. Zudov , C. L. Yang , R. R. Du , T. -C. Shen , J. -Y. Ji , J. S. Kline , J. R. Tucker

Magnetoresistance of two-dimensional electron systems with several occupied subbands oscillates owing to periodic modulation of the probability of intersubband transitions by the quantizing magnetic field. In addition to previous…

介观与纳米尺度物理 · 物理学 2009-12-08 S. Wiedmann , N. C. Mamani , G. M. Gusev , O. E. Raichev , A. K. Bakarov , J. C. Portal

The nonlinear transport regime is manifested in the nonlinear current-voltage characteristic of the system. An example of such a nonlinear regime is a setup in which current is injected into the sample and the measured voltage drop is…

介观与纳米尺度物理 · 物理学 2025-10-06 Dmitry V. Chichinadze

We report on the first experimental observation of an apparent metal insulator transition in a 2D electron gas confined in an InAs quantum well. At high densities we find that the carrier mobility is limited by background charged impurities…

介观与纳米尺度物理 · 物理学 2014-10-15 J. Shabani , S. Das Sarma , C. J. Palmstrøm

We report transport mobility measurements for clean, two-dimensional (2D) electron systems confined to GaAs quantum wells (QWs), grown via molecular beam epitaxy, in two families of structures, a standard, symmetrically-doped GaAs set of…

介观与纳米尺度物理 · 物理学 2017-01-20 D. Kamburov , K. W. Baldwin , K. W. West , M. Shayegan , L. N. Pfeiffer

We have investigated the gate-voltage dependence and the temperature dependence of the magnetoconductivity of amorphous indium-gallium-zinc-oxide thin-film transistors. A weak-localization feature is observed at small magnetic fields on top…

介观与纳米尺度物理 · 物理学 2017-03-14 Wei-Hsiang Wang , Syue-Ru Lyu , Elica Heredia , Shu-Hao Liu , Pei-hsun Jiang , Po-Yung Liao , Ting-Chang Chang , Hua-Mao Chen

The band-inverted electron-hole bilayers, such as InAs/GaSb, are an interesting playground for the interplay of quantum spin Hall effect and correlation effects because of the small density of electrons and holes and the relatively small…

介观与纳米尺度物理 · 物理学 2022-12-21 Tania Paul , V. Fernández Becerra , Timo Hyart

We study the quantum Hall states in the lowest Landau level for a single wide quantum well. Due to a separation of charges to opposite sides of the well, a single wide well can be modelled as an effective two level system. We provide…

凝聚态物理 · 物理学 2009-10-28 M. Abolfath , L. Belkhir , N. Nafari

We perform a symmetry analysis of a 2D electron system in HgTe/HgCdTe quantum wells in the situation when the chemical potential is outside of the gap, so that the bulk of the quantum well is conducting. In order to investigate quantum…

介观与纳米尺度物理 · 物理学 2014-09-10 P. M. Ostrovsky , I. V. Gornyi , A. D. Mirlin