相关论文: Valley to charge current conversion in graphene gr…
The low-energy electronic properties of strained graphene are usually obtained by transforming the bond vectors according to the Cauchy-Born rule. In this work, we derive a new effective Dirac Hamiltonian by assuming a more general…
We study the electron scattering produced by local out-of-plane strain deformations in the form of Gaussian bumps in graphene. Of special interest is to take into account the scalar field associated with the redistribution of charge due to…
The transmission across a graphene bilayer region is calculated for two different types of connections to monolayer leads. A transfer matrix algorithm based on a tight binding model is developed to obtain the ballistic transmission beyond…
The scattering of two-dimensional massless Dirac fermions from local spin-orbit interactions with an origin in dilute concentrations of physisorbed atomic species on graphene is theoretically investigated. The hybridization between graphene…
A valley plasmonic crystal for graphene surface plasmons (GSPs) is proposed. We demonstrate that a designer metagate, placed within a few nanometers from graphene, can be used to impose a triangular periodic Fermi energy landscape on the…
We obtain the output characteristics of graphene field-effect transistors by using the charge-control model for the current, based on the solution of the Boltzmann equation in the field-dependent relaxation time approximation. Closed…
Conductance of zigzag interfaces between graphene sheet and normal metal is investigated in the tight-binding approximation. Boundary conditions, valid for a variety of scattering problems, are constructed and applied to the normal metal --…
Based on explicit solution of current continuity equation in the graphene FET's channel the semi-classical diffusion-drift description of the carrier transport and I-V characteristics model has been developed. Role of rechargeable defects…
Electron transport in graphene is along the sheet but junction devices are often made by stacking different sheets together in a "side-contact" geometry which causes the current to flow perpendicular to the sheets within the device. Such…
It is observed experimentally that the sign of the Hall resistance can be flipped by a dc electric current in the twisted bilayer graphene (TBG) at 3/4 filling of the four-fold degenerate conduction flat bands. The experiment implies a…
We consider electronic transport accross one-dimensional heterostructures described by the Dirac equation. We discuss the cases where both the velocity and the mass are position dependent. We show how to generalize the Dirac Hamiltonian in…
Monolayer transition metal dichalcogenides have recently become a playground for spin- and valleytronics research. Their low energy spectrum can be described by Dirac cones on the corners of Brillouin zone, but the physical properties are…
Probing and controlling the valley degree of freedom in graphene systems by transport measurements has been a major challenge to fully exploit the unique properties of this two-dimensional material. In this theoretical work, we show that…
A method to derive the charge current density and its quantum mechanical correlation from the scattering matrix is discussed for quantum scattering systems described by a time-dependent Hamiltonian operator. The current density and charge…
The existence of two-inequivalent valleys in the band structure of graphene has motivated the search of mechanisms that allow their separation and control for potential device applications. Among the several schemes proposed in the…
The paper addresses boundary electronic properties of graphene with a complex edge structure of the armchair/zigzag/armchair type. It is shown that the finite zigzag region supports edge bound states with discrete equidistant spectrum…
We investigate the electronic properties of a hybrid system that comprises single-bilayer graphene structures subjected to a perpendicular magnetic field. Specifically, our focus is on the behavior exhibited by the zigzag boundaries of the…
Analytic expressions are presented for the dark current-voltage relation $J(V)$ of a $pn^+$ junction with positively charged columnar grain boundaries with high defect density. These expressions apply to non-depleted grains with…
We report on the possibility of valley number fractionalization in graphene with a topological defect that is accounted for in Dirac equation by a pseudomagnetic field. The valley number fractionalization is attributable to an imbalance on…
The illumination of a single-layer transition metal dichalcogenide with an elliptically-polarized light beam is shown to give rise to a differential rate of inter-band carrier excitation between the valence and conduction states around the…