相关论文: Valley to charge current conversion in graphene gr…
The generation of valley current is a fundamental goal in graphene valleytronics but no practical ways of its realization are known yet. We propose a workable scheme for the generation of bulk valley current in a graphene mechanical…
We consider systems described by the two-dimensional Dirac equation where the Fermi velocity is inhomogeneous as a consequence of mechanical deformations. We show that the mechanical deformations can lead to deflection and focusing of the…
We study the electronic transport properties at the intersection of three topological zero-lines as the elementary current partition node that arises in minimally twisted bilayer graphene. Unlike the partition laws of two intersecting…
A transfer matrix method is presented for solving the scattering problem for the quasi one-dimensional massless Dirac equation applied to graphene in the presence of an arbitrary inhomogeneous electric and perpendicular magnetic field. It…
Evolution of electronic inhomogeneities with back-gate voltage in graphene on SiO$_2$ was studied using room temperature scanning tunneling microscopy and spectroscopy. The reversal of local contrast in some places in the STS maps and sharp…
Extended defects in graphene, such as linear edges, break the translational invariance and can also have an impact on the symmetries specific to massless Dirac-like quasiparticles in this material. The paper examines the consequences of a…
The theoretical results are presented showing that strain-induced anisotropy of graphene spectrum gives rise to the valley currents under the illumination by normally incident light. The currents of the two graphene valleys are mutually…
We investigate physical properties that can be used to distinguish the valley degree of freedom in systems where inversion symmetry is broken, using graphene systems as examples. We show that the pseudospin associated with the valley index…
In gapped Dirac materials, the topological current associated with each valley can flow in opposite directions creating long-range charge-neutral valley currents. We report valley currents in hBN/bilayer-graphene heterostructures with an…
We systematically investigate the transmission of charge carriers across the grain-boundary defects in polycrystalline graphene by means of the Landauer-B\"uttiker formalism within the tight-binding approximation. Calculations reveal a…
We study the electron transmission through the domain boundary on bilayer graphene separating AB and BA stacking regions. Using the effective continuum model, we calculate the electron transmission probability as a function of the electron…
We study the transport properties of Dirac fermions through gapped graphene through a magnetic barrier irradiated by a laser field oscillating in time. We use Floquet theory and the solution of Weber's differential equation to determine the…
We analyze the problem of electronic transmission through different regions of a graphene sheet that are characterized by different types of connections between the Dirac points. These valley symmetry breaking Hamiltonians might arise from…
The effect of grain boundaries and wrinkles on the electrical properties of polycrystalline graphene is pronounced. Here we investigate the stitching between grains of polycrystalline graphene, specifically, overlapping of layers at the…
The X-ray edge problem of graphene with the Dirac fermion spectrum is studied. At half-filling the linear density of states suppresses the singular response of the Fermi liquid, while away from half-filling the singular features of the…
With its two degenerate valleys at the Fermi level, the band structure of graphene provides the opportunity to develop unconventional electronic applications. Herein, we show that electron and hole quasiparticles in graphene can be filtered…
We study the amount of backscattering of Valley Hall modes in a classical topological insulator. In reciprocal systems, the conservation of the valley index has been argued to be at the root of the high-transmission of Valley Hall modes,…
An analogue of the Datta-Das spin FET is investigated, which is all-graphene and based on the valley degree of freedom of electrons / holes. The "valley FET" envisioned consists of a quantum wire of gapped graphene (channel) sandwiched…
Dirac electrons in graphene have a valley degree of freedom that is being explored as a carrier of information. In that context of "valleytronics" one seeks to coherently manipulate the valley index. Here we show that reflection from a…
Valley-polarized currents can be generated by local straining of multi-terminal graphene devices. The pseudo-magnetic field created by the deformation allows electrons from only one valley to transmit and a current of electrons from a…