相关论文: Band bending profile and band offset extraction at…
We review the binding and energy level alignment of $\pi$-conjugated systems on metals, a field which during the last two decades has seen tremendous progress both in terms of experimental characterization as well as in the depth of…
GW approximation is used to systematically revisit the image-potential band-gap narrowing at metal/semiconductor interfaces proposed by Inkson in the 1970's. Here we have questioned how the narrowing as calculated from quasi-particle energy…
Characterizing long-range electric fields and built-in potentials in functional materials at nano- to micrometer scales is of supreme importance for optimizing devices. E.g., the functionality of semiconductor heterostructures or battery…
An integral equation-based approach for the design of dual band stacked metasurfaces which are invariant in one-dimension is presented. The stacked metasurface will generate collimated beams at desired angles in each band upon reflection.…
This work discusses an extension to conventional low-coherence interferometry by the introduction of dispersion-encoding. The extension facilitates the measurement of surface height profiles with sub-nm resolution. The selection of a…
Electronic properties of III-V semiconductor alloys are examined using first principles with the focus on the spatial localization of electronic states. We compare localization at the band edges due to various isovalent impurities in a host…
Infrared heterodyne interferometry has been proposed as a practical alternative for recombining a large number of telescopes over kilometric baselines in the mid-infrared. However, the current limited correlation capacities impose strong…
We propose a semi-supervised network for wide-angle portraits correction. Wide-angle images often suffer from skew and distortion affected by perspective distortion, especially noticeable at the face regions. Previous deep learning based…
There is increased interest in the heterogeneous integration of various compound semiconductors with Si for a variety of electronic and photonic applications. This paper focuses on integrating GaAsSb (with absorption in the C-band at…
Scanning electron microscopy (SEM), a century-old technique, is today a ubiquitous method of imaging the surface of nanostructures. However, most SEM detectors simply count the number of secondary electrons from a material of interest, and…
Electronic band structure (BS) and crystal structure are the two complementary identifiers of solid state materials. While convenient instruments and reconstruction algorithms have made large, empirical, crystal structure databases…
In core/shell quantum dots (QDs), the interface between semiconductors of different chemical character largely determines their optoelectronic properties. In III-V/II-VI systems, this boundary involves pronounced chemical and electronic…
Ultrasound Tomography has seen a revival of interest in the past decade, especially for breast imaging, due to improvements in both ultrasound and computing hardware. In particular, three-dimensional ultrasound tomography, a fully…
Electronic correlations are crucial to the low energy physics of metallic systems with localized $d$ and $f$ states; however, their effect on band insulators and semiconductors is typically negligible. Here, we measure the electronic…
Band alignment (or band convergence) is a strategy suggested to provide improvements in the thermoelectric power factor (PF) of materials with complex bandstructures. The addition of more bands at the energy region that contributes to…
This paper presents a new technique of optical beam-induced scattering of mid-IR-laser radiation, which is a special mode of the recently developed scanning mid-IR-laser microscopy. The technique in its present form is designed for…
Topology is a central notion in the classification of band insulators and characterization of entangled many-body quantum states. In some cases, it manifests as quantized observables such as quantum Hall conductance. However, being…
The determination of depth profiles across interfaces is of primary importance in many scientific and technological areas. Photoemission spectroscopy is in principle well suited for this purpose, yet a quantitative implementation for…
Focused ion beams (FIBs) are widely used in nanofabrication for applications such as circuit repair, ultra-thin lamella preparation, strain engineering, and quantum device prototyping. Although the lateral spread of the ion beam is often…
Extra-large apertures, high carrier frequencies, and integrated sensing and communications (ISAC) are pushing array processing into the Fresnel region, where spherical wavefronts induce a range-dependent phase across the aperture. This…