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Sr$_2$IrO$_4$ is the archetype of the spin-orbit Mott insulator, but the nature of the metallic states that may emerge from this type of insulator is still not very well known. We study with angle-resolved photoemission the…

The physics of doped Mott insulators remains controversial after decades of active research, hindered by the interplay among possible competing orders and fluctuations. It is thus highly desired to distinguish the intrinsic characters of…

Doping the distorted-perovskite Mott insulators LaTiO$_3$ and GdTiO$_3$ with a single SrO layer along the [001] direction gives rise to a rich correlated electronic structure. A realistic superlattice study by means of the charge…

材料科学 · 物理学 2015-05-08 Frank Lechermann , Michael Obermeyer

The insulator to metal transition in LaTiO_3 induced by La substitution via Sr is studied within multi-band exact diagonalization dynamical mean field theory at finite temperatures. It is shown that weak hole doping triggers a large…

强关联电子 · 物理学 2009-11-13 A. Liebsch

The path from a Mott insulating phase to high temperature superconductivity encounters a rich set of unconventional phenomena involving the insulator-to-metal transition (IMT) such as emergent electronic orders and pseudogaps that…

The last few decades has seen the rapid growth of interest in the bulk perovskite-type transition metal oxides SrVO$_3$ and SrTiO$_3$. The electronic configuration of these perovskites differs by one electron associated to the transition…

强关联电子 · 物理学 2023-09-04 A. D. N. James , M. Aichhorn , J. Laverock

We present scanning tunneling microscopy and spectroscopy experiments on the novel J_eff = 1/2 Mott insulator Sr2IrO4. Local density of states (LDOS) measurements show an intrinsic insulating gap of 620 meV that is asymmetric about the…

强关联电子 · 物理学 2014-07-10 Jixia Dai , Eduardo Calleja , Gang Cao , Kyle McElroy

With optical spectroscopy we provide evidence that the insulator-metal transition in Sr$_2$Ir$_{1-x}$Rh$_{x}$O$_{4}$ occurs close to a crossover from the Mott- to the Slater-type. The Mott-gap at $x = 0$ persists to high temperature and…

强关联电子 · 物理学 2020-01-17 B. Xu , P. Marsik , E. Sheveleva , F. Lyzwa , A. Louat , V. Brouet , D. Munzar , C. Bernhard

Sr$_2$IrO$_4$ has attracted a lot of attention due to its structural and electronic similarities to La$_2$CuO$_4$ which is the parent compound of high-T$_c$ superconducting cuprates. It was proposed to be a strong spin-orbit coupled…

We present a theoretical investigation of the effects of correlations on the electronic structure of the Mott insulator Sr$_2$IrO$_4$ upon electron doping. A rapid collapse of the Mott gap upon doping is found, and the electronic structure…

强关联电子 · 物理学 2018-04-11 Alice Moutenet , Antoine Georges , Michel Ferrero

The doping induced insulator-metal transition in $La_{1-x}Sr_{x}TiO_{3}$ is studied using the ab-initio LDA+DMFT method. Combining the LDA bandstructure for the actual, distorted structure found recently with multi-orbital DMFT to treat…

强关联电子 · 物理学 2016-08-31 L. Craco , M. S. Laad , S. Leoni , E. Müller-Hartmann

Layered 5d transition metal oxides (TMOs) have attracted significant interest in recent years because of the rich physical properties induced by the interplay between spin-orbit coupling, bandwidth and on-site Coulomb repulsion. In Sr2IrO4,…

Electrostatic carrier doping using a field-effect-transistor structure is an intriguing approach to explore electronic phases by critical control of carrier concentration. We demonstrate the reversible control of the insulator-metal…

材料科学 · 物理学 2015-05-13 H. Nakamura , H. Tomita , H. Akimoto , R. Matsumura , I. H. Inoue , T. Hasegawa , K. Kono , Y. Tokura , H. Takagi

By means of first principles schemes based on magnetically constrained density functional theory and on the band unfolding technique we study the effect of doping on the conducting behaviour of the Lifshitz magnetic insulator NaOsO3.…

We report the study of metal-STO-metal memristors where the doping concentration in STO can be fine-tuned through electric field migration of oxygen vacancies. In this tunnel junction device, the evolution of the Density Of States (DoS) can…

介观与纳米尺度物理 · 物理学 2015-06-18 Alireza Mottaghizadeh , Qian Yu , Pei Lin Lang , Alexandre Zimmers , Herve Aubin

One of the major puzzles in condensed matter physics has been the observation of a Mott-insulating state away from half-filling. The filling-controlled Mott insulator-metal transition, induced via charge-carrier doping, has been extensively…

强关联电子 · 物理学 2021-07-13 S. Hameed , J. Joe , D. M. Gautreau , J. W. Freeland , T. Birol , M. Greven

We perform a time-resolved optical study of Sr$_2$IrO$_4$ to understand the influence of magnetic ordering on the low energy electronic structure of a strongly spin-orbit coupled $J_{eff}$=1/2 Mott insulator. By studying the recovery…

强关联电子 · 物理学 2012-03-21 D. Hsieh , F. Mahmood , D. H. Torchinsky , G. Cao , N. Gedik

Recent quasi-2D systems with judicious exploitation of the atomic monolayer or few-layer architecture exhibit unprecedented physical properties that challenge the conventional wisdom on the condensed matter physics. Here we show that the…

We have used a combination of resonant magnetic x-ray scattering (RMXS) and x-ray absorption spectroscopy (XAS) to investigate the properties of the doped spin-orbital Mott insulator Sr2Ir(1-x)Rh(x)O4 (0.07 < x < 0.70). We show that…

强关联电子 · 物理学 2014-02-12 J. P. Clancy , A. Lupascu , H. Gretarsson , Z. Islam , Y. F. Hu , D. Casa , C. S. Nelson , S. C. Lamarra , G. Cao , Young-June Kim

Based on recent experiments, we describe the Mott insulating, but undimerized state of $TiOCl$ using the local-density approximation combined with multi-orbital dynamical mean field theory (LDA+DMFT) for this $3d^{1}$ system.Good agreement…

强关联电子 · 物理学 2007-05-23 L. Craco , M. S. Laad , E. Müller-Hartmann
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