相关论文: Mechanism for Embedded In-plane Self Assembled Nan…

We present TEM images of the interior of metal whiskers (MW) grown on electroplated Sn films. Along with earlier published information, our observations focus on a number of questions, such as why MWs' diameters are in the micron range…

We report on a theoretical study of the electronic structures of InSb and GaSb nanowires oriented along the [001] and [111] crystallographic directions. The nanowires are described by atomistic, spin-orbit inteaction included, tight-binding…

We demonstrate the capability of growing high quality ultrathin films of the topological insulators Bi2Se3 and Bi2Te3 using molecular beam epitaxy. Unlike previous growth techniques, which often pin the Fermi energy in the conduction band…

Tin telluride (SnTe) is an IV-VI semiconductor with a topological crystalline insulator band structure, high thermoelectric performance, and in-plane ferroelectricity. Despite its many applications, there has been little work focused on…

Scanning tunneling luminescence microscopy (STLM) along with scanning tunneling spectroscopy (STS) is applied to a step-bunched, oxidized 4H-SiC surface prepared on the silicon face of a commercial, n-type SiC wafer using a silicon melt…

We report on fabrication of a two-dimensional topological insulator-Bi(111) bilayer on Sb nanofilms via a sequential molecular beam epitaxy (MBE) growth technique. Our angle-resolved photoemission measurements demonstrate the evolution of…

Nanoscale defect structure within the magnetic penetration depth of ~100nm is key to the performance limitations of niobium superconducting radio frequency (SRF) cavities. Using a unique combination of advanced thermometry during cavity RF…

Nominally undoped silicon nanowires (NW) were grown by catalytic chemical vapor deposition. The growth process was optimized to control the NWs diameters by using different Au catalyst thicknesses on amorphous SiO2, Si3N4, or crystalline-Si…

Particle channeling in a bent crystal lattice has led to an efficient instrument for beam steering at accelerators, demonstrated from MeV to TeV energies. In particular, crystal focusing of high energy protons to micron size has been…

Self-assembled electronic devices, such as quantum dots or switchable molecules, need self-assembled nanowires as connections. We explore the growth of conducting Gd disilicide nanowires at step arrays on Si(111). Atomically smooth wires…

Growth of carbon nanotubes (CNTs) was performed by atmospheric pressure chemical vapour deposition (APCVD) of propane on Si(111) with a pre-treated Ni overlayer acting as a catalyst. Prior to the growth of CNTs, a thin film of Ni was…

The colloidal synthesis of large thin two-dimensional (2D) nanosheets is fascinating but challenging, since the growth along the lateral and vertical dimensions need to be controlled independently. In-plane anisotropy in 2D nanosheets is…

Zinc-based nitride CaZn2N2 films grown by molecular beam epitaxy (MBE) with a plasma-assisted active nitrogen-radical source are promising candidates of next-generation semiconductors for light-emitting diodes and solar cells. This nitride…

We present a detailed x-ray diffraction study of the strain in InAs/GaSb superlattices grown by molecular beam epitaxy. The superlattices were grown with either InSb or GaAs interfaces. We show that the superlattice morphology, either…

Acting as artificial synapses, two-terminal memristive devices are considered fundamental building blocks for the realization of artificial neural networks. Organized into large arrays with a top-down approach, memristive devices in…

GeSn semiconductors are group-IV isovalent alloys that offer remarkable tunability of optoelectronic properties across the entire infrared spectrum, while remaining fully compatible with silicon processing standards. These attributes make…

Control of faceting during epitaxy is critical for nanoscale devices. This work identifies the origins of gaps and different facets during regrowth of InGaAs adjacent to patterned features. Molecular beam epitaxy (MBE) near SiO2 or SiNx led…

In this work we show that the incidence angle of group-III elements fluxes plays a significant role on the diffusion-controlled growth of III-V nanowires (NWs) by molecular beam epitaxy (MBE). We present a thorough experimental study on the…

The fullerene (C60) nanowires, which possess a highly unusual morphology featured by a prism-like central core and three nanobelt-like wings joined along the growth direction to give an overall Y-shaped cross section, have been studied. The…

Plane EM waves transmitted through nano-corrugated metallic thin films produce evanescent waves which include the information on the nano-structures. The production of the evanescent waves at the metallic surface are analyzed. A microsphere…