相关论文: Parasitic conduction channels in topological insul…
In a topological insulator (TI) the character of electron transport varies from insulating in the interior of the material to metallic near its surface. Unlike, however, ordinary metals, conducting surface states in TIs are topologically…
The proximity effect at the interface between a topological insulator (TI) and a superconductor is predicted to give rise to chiral topological superconductivity and Majorana fermion excitations. In most TIs studied to date, however, the…
Three-dimensional (3D) topological insulators (TIs) are candidate materials for various electronic and spintronic devices due to their strong spin-orbit coupling and unique surface electronic structure. Rapid, low-cost preparation of…
Magneto-transport properties of (111)-oriented single-crystal thin films of SnTe were investigated. SnTe (111) thin films were epitaxially grown on a BaF2 substrate by molecular beam epitaxy. By optimizing the growth conditions and the…
Study of the dephasing in electronic systems is not only important for probing the nature of their ground states, but also crucial to harnessing the quantum coherence for information processing. In contrast to well-studied conventional…
We consider in our work high quality single crystal thin films of Bi2Se3, grown by molecular beam epitaxy, both with and without Pb doping. Our ARPES data demonstrate topological surface states with a Fermi level lying inside the bulk band…
Superconductors (SCs) with nontrivial topological band structures in the normal state have been discovered recently in bulk materials. When such SCs are made into thin films, quantum tunneling and Cooper pairing take place between the…
Topological insulators (TIs) are a class of materials which are insulating in their bulk form yet, upon introduction of an a boundary or edge, e.g. by abruptly terminating the material, may exhibit spontaneous current along their boundary.…
Spin-momentum helical locking is one of the most important properties of the nontrivial topological surface states (TSS) in 3D topological insulators (TI). It underlies the iconic topological protection (suppressing elastic backscattering)…
We consider a thin film of a topological insulator (TI) sandwiched between two ferromagnetic (FM) layers. The system is additionally under an external gate voltage. The surface electron states of TI are magnetized due to the magnetic…
Topological Insulators (TIs) are unique materials where insulating bulk hosts linearly dispersing surface states protected by the Time-Reversal Symmetry (TRS). These states lead to dissipationless current flow, which makes this class of…
The discovery of topological insulators (TIs), materials with bulk band gaps and protected cross-gap surface states, in compounds such as Bi2Se3 has generated much interest in identifying topological surface states (TSSs) in other classes…
In the past few years there has been a surge in the material science engineering in order to synthesize bulk insulating and surface metallic Topological Insulating (TI) materials. This quest is not only theoretically important but also…
A method for assessing the quality of electronic material properties of thin-film metal oxide semiconductor field-effect transistors (MOSFETs) is presented. By investigating samples with MOCVD-grown MoS${_2}$ channels exposed to atmospheric…
Uniform and large area synthesis of bulk insulating ultrathin films is an important subject toward applications of a surface of three dimensional topological insulators (3D-TIs) in various electronic devices. Here we report epitaxial growth…
Two-dimensional topological insulators (2D TIs) are a highly desired quantum phase but few materials have demonstrated clear signatures of a 2D TI state. It has been predicted that 2D TIs can be created from thin films of three-dimensional…
A point charge near the surface of a topological insulator (TI) with broken time-reversal symmetry is predicted to generate an image magnetic charge in addition to an image electric charge. We use scanning tunneling spectroscopy to study…
Ultrafast dynamics in three-dimensional topological insulators (TIs) opens new routes for increasing the speed of information transport up to frequencies thousand times faster than in modern electronics. However, up to date, disentangling…
We have developed a transient thermoreflectance technique using picosecond pulsed and cw laser to study thermal conductivity and interface conductance in both thin-films and bulk materials. A real time-resolved system observes a thermal…
In the three-dimensional topological insulator (TI), the physics of doped semiconductors exists literally side-by-side with the physics of ultra-relativistic Dirac fermions. This unusual pairing creates a novel playground for studying the…