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Dielectrics are insulating materials used in many different electronic devices and play an important role in all of them. Current advanced electronic devices use dielectric materials with a high dielectric constant and avoid high leakage…

应用物理 · 物理学 2019-05-17 Fei Hui

A theoretical investigation of the microscopic mechanisms provided the transient enhanced diffusion of boron atoms during rapid thermal annealing of silicon substrates doped by high fluence ion implantation was carried out. To compare the…

介观与纳米尺度物理 · 物理学 2010-07-23 O. I. Velichko , A. A. Hundoryna

Borophene, the boron atom analogue to graphene, being atomic thick have been just recently experimentally fabricated. In this work, we employ first-principles density functional theory calculations to investigate the interaction of Ca, Mg,…

材料科学 · 物理学 2017-04-17 B Mortazavi , A Dianat , O Rahaman , G Cuniberti , T Rabczuk

We study how the substrate temperature influences the structural properties of carbon films deposited by PVD (physical vapor deposition) techniques. We adapted a heating system inside the deposition chamber, with temperatures up to…

Al-doped ZnO thin films were deposited using reactive high power impulse magnetron sputtering at substrate temperatures between room temperature and 600 $\bullet$ C. Two sample series with different oxygen partial pressures were studied.…

材料科学 · 物理学 2025-03-03 Martin Mickan , Ulf Helmersson , David Horwat

TiO$_{2-\delta}$ films were deposited on (100) Lanthanum aluminates LaAlO$_{3}$ substrates at a very low oxygen chamber pressure $P\approx 0.3$ mtorr employing a pulsed laser ablation deposition technique. In previous work, it was…

其他凝聚态物理 · 物理学 2009-11-13 Soack Dae Yoon , Vincent G. Harris , Carmine Vittoria , Allan Widom

Rhombohedral B4C coatings were synthesised on fused silica substrates by CO2 laser-assisted chemical vapour deposition (LCVD), using a dynamic reactive atmosphere of BCl3, C2H4 and H2. Films with carbon content from 15 to 22 at.% were grown…

材料科学 · 物理学 2007-05-23 M. J. Santos , A. J. Silvestre , O. Conde

ScN material is an emerging semiconductor with an indirect bandgap. It has attracted attention for its thermoelectric properties, use as seed layers, and for alloys for piezoelectric application. ScN or other transition metal nitride…

应用物理 · 物理学 2018-10-30 Arnaud le Febvrier , Nina Tureson , Nina Stilkerich , Grzegorz Greczynski , Per Eklund

A metal-oxide film can be used as a hydrogen-isotope permeation barrier in the fuel circulation system for nuclear fusion. We fabricated Er$_2$O$_3$ thin film on a type 316L stainless-steel substrate by using a metal-organic chemical vapor…

应用物理 · 物理学 2020-01-08 Halim Choi , Y. H. Shin , Yongmin Kim

Experimental results on the thermal desorption of benzene (C6H6) from amorphous silica (SiO2) are presented. The amorphous SiO2 substrate was imaged using atomic force microscopy (AFM), revealing a surface morphology reminiscent of that of…

天体物理学 · 物理学 2015-10-21 J. D. Thrower , M. P. Collings , F. J. M. Rutten , M. R. S. McCoustra

Highly conducting $SnO_{2}$ thin films were prepared by chemical spray pyrolysis technique. One set of as-deposited films were annealed in air for 2 h at 850$^{o}$C. These as-deposited and annealed films were irradiated using $Au^{9+}$ ions…

材料科学 · 物理学 2017-08-23 Sushant Gupta , Fouran Singh , Indra Sulania , B. Das

Bulk rhenium trioxide (ReO3) has an unusually high electrical conductivity and, being nanosized, has promising catalytic properties. However, the production of pure ReO3 thin films is challenging due to the difficulty to stabilize rhenium…

材料科学 · 物理学 2022-06-30 M. Zubkins , A. Sarakovskis , E. Strods , L. Bikse , B. Polyakov , A. Kuzmin , V. Vibornijs , J. Purans

Silicon films doped with Er and O were prepared by techniques of physical vapor deposition on crystalline silicon, ion beam mixing and oxygen incorporation through Ar+ and O2+ implantation, and thermal annealing. Processing steps were…

材料科学 · 物理学 2012-02-03 Sufian Abedrabbo , Anthony Fiory

Unexpected ferromagnetism has been observed in carbon doped ZnO films grown by pulsed laser deposition [Phys. Rev. Lett. 99, 127201 (2007)]. In this letter, we introduce carbon into ZnO films by ion implantation. Room temperature…

This paper reports on the structural and optical properties of Co-doped TiO2 thin films grown onto (0001) Al2O3 substrates by non-reactive pulsed laser deposition (PLD) using argon as buffer gas. It is shown that by keeping constant the…

材料科学 · 物理学 2013-07-09 S. Rout , N. Popovici , S. Dalui , M. L. Paramês , R. C. Silva , A. J. Silvestre , O. CondE

The ultrahigh thermal conductivity of boron arsenide makes it a promising material for next-generation electronics and optoelectronics. In this work, we report measured optical properties of cubic boron arsenide crystals including the…

Simple vacuum evaporation technique for deposition of dyes on various solid surfaces has been developed. The method is compatible with conventional solvent-free nanofabrication processing enabling fabrication of nanoscale optoelectronic…

Most recently the formation of boron monoxide (BO) in the two-dimensional (2D) form has been confirmed experimentally (J. Am. Chem. Soc. 2023, 145, 14660). Motivated by the aforementioned finding, herein we theoretically explore the key…

介观与纳米尺度物理 · 物理学 2023-10-31 Bohayra Mortazavi , Fazel Shojaei , Fei Ding , Xiaoying Zhuang

Superconducting MgB2 thin films were prepared on 50-micrometer-thick, flexible polyamide Kapton-E foils by vacuum co-deposition of Mg and B precursors with nominal thickness of about 100 nm and a special ex-situ rapid annealing process in…

超导电性 · 物理学 2009-11-07 P. Kus , A. Plecenik , L. Satrapinsky , Y. Xu , R. Sobolewski

The high thermal conductivity of boron arsenide (BAs) makes it a promising material for optoelectronic applications in which thermal management is central. In this work, we study the finite temperature optoelectronic properties of BAs by…

材料科学 · 物理学 2019-06-18 Ivona Bravić , Bartomeu Monserrat