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Identification of microscopic configuration of point defects acting as quantum bits is a key step in the advance of quantum information processing and sensing. Among the numerous candidates, silicon vacancy related centers in silicon…

Spin impurities in diamond have emerged as a promising building block in a wide range of solid-state-based quantum technologies. The negatively charged silicon-vacancy centre combines the advantages of its high-quality photonic properties…

Silicon Carbide (SiC) demonstrates significant potential for high-energy particle detection in complex radiation environments due to its exceptional radiation resistance, excellent environmental adaptability, and fast response time.…

仪器与探测器 · 物理学 2025-04-04 Zaiyi. Li , Xiyuan. Zhang , Congcong. Wang , Haolan. Qu , Jiaxiang. Chen , Peilian. Liu , Suyu. Xiao , Xinbo. Zou , Hai. Lu , Xin. Shi

Optically interfaced solid-state defects are promising candidates for quantum communication technologies. The ideal defect system would feature bright telecom emission, long-lived spin states, and a scalable material platform,…

Silicon carbide is a very promising platform for quantum applications because of extraordinary spin and optical properties of point defects in this technologically-friendly material. These properties are strongly influenced by crystal…

量子物理 · 物理学 2020-05-05 Z. Shang , A. Hashemi , Y. Berencén , H. -P. Komsa , P. Erhart , A. V. Krasheninnikov , G. V. Astakhov

In this paper, we study the electron spin decoherence of single defects in silicon carbide (SiC) nuclear spin bath. We find that, although the natural abundance of $^{29}\rm{Si}$ ($p_{\rm{Si}}=4.7\%$) is about 4 times larger than that of…

介观与纳米尺度物理 · 物理学 2015-01-09 Li-Ping Yang , Christian Burk , Mattias Widmann , Sang-Yun Lee , Jörg Wrachtrup , Nan Zhao

Great efforts have been made to the investigation of defects in silicon carbide for their attractive optical and spin properties. However, most of the researches are implemented at low and room temperature. Little is known about the spin…

介观与纳米尺度物理 · 物理学 2018-10-23 Fei-Fei Yan , Jun-Feng Wang , Qiang Li , Ze-Di Cheng , Jin-Ming Cui , Wen-Zheng Liu , Jin-Shi Xu , Chuan-Feng Li , Guang-Can Guo

Silicon carbide (SiC) has attracted significant attention as a promising quantum material due to its ability to host long-lived, optically addressable color centers with solid-state photonic interfaces. The CMOS compatibility of 4H-SiCOI…

量子物理 · 物理学 2024-12-31 Tongyuan Bao , Qi Luo , Ailun Yin , Yao Zhang , Haibo Hu , Zhengtong Liu , Shumin Xiao , Xin Ou , Yu Zhou , Qinghai Song

Silicon is undoubtedly one of the most promising semiconductor materials for spin-based information processing devices. Its highly advanced fabrication technology facilitates the transition from individual devices to large-scale processors,…

Optically active solid-state spin registers have demonstrated their unique potential in quantum computing, communication and sensing. Realizing scalability and increasing application complexity requires entangling multiple individual…

Spin impurities in diamond can be versatile tools for a wide range of solid-state-based quantum technologies, but finding spin impurities which offer sufficient quality in both photonic and spin properties remains a challenge for this…

Spin-active defects in silicon carbide (SiC) are promising quantum light sources for realizing scalable quantum technologies. In different applications, these photoluminescent defects are often placed in a nanostructured host or close to…

材料科学 · 物理学 2024-05-22 Cyrille Armel Sayou Ngomsi , Tamanna Joshi , Pratibha Dev

Transition metal (TM) defects in silicon carbide have favorable spin coherence properties and are suitable as quantum memory for quantum communication. To characterize TM defects as quantum spin-photon interfaces, we model defects that have…

介观与纳米尺度物理 · 物理学 2021-02-25 Benedikt Tissot , Guido Burkard

Spin defects in silicon carbide (SiC) with mature wafer-scale fabrication and micro/nano-processing technologies have recently drawn considerable attention. Although room temperature single-spin manipulation of colour centres in SiC has…

Crystal defects can confine isolated electronic spins and are promising candidates for solid-state quantum information. Alongside research focusing on nitrogen vacancy centers in diamond, an alternative strategy seeks to identify new spin…

Quantum technology relies on proper hardware, enabling coherent quantum state control as well as efficient quantum state readout. In this regard, wide-bandgap semiconductors are an emerging material platform with scalable wafer fabrication…

Defect spins in silicon carbide have become promising platforms with respect to quantum information processing and quantum sensing. Indeed, the optically detected magnetic resonance (ODMR) of defect spins is the cornerstone of the…

介观与纳米尺度物理 · 物理学 2020-02-19 Jun-Feng Wang , Jin-Ming Cui , Fei-Fei Yan , Qiang Li , Ze-Di Cheng , Zheng-Hao Liu , Zhi-Hai Lin , Jin-Shi Xu , Chuan-Feng Li , Guang-Can Guo

We present a quantitative theory for simulating optically detected magnetic resonance (ODMR) measurements of optically-active spin centers using steady-state Lindblad equations. We apply the theory to an experimental ODMR spectrum…

介观与纳米尺度物理 · 物理学 2025-12-02 David A. Fehr , Hannes Kraus , Corey J. Cochrane , Michael E. Flatté

Paramagnetic defects and nuclear spins are often the major sources of decoherence and spin relaxation in solid-state qubits realized by optically addressable point defect spins in semiconductors. It is commonly accepted that a high degree…

介观与纳米尺度物理 · 物理学 2022-05-12 Oscar Bulancea-Lindvall , Matthew Travis Eiles , Nguyen Tien Son , Igor A. Abrikosov , Viktor Ivády

Progress with quantum technology has for a large part been realized with the nitrogen-vacancy centre in diamond. Part of its properties, however, are nonideal and this drives research into other spin-active crystal defects. Several of these…