相关论文: Influence of irradiation on defect spin coherence …
Materials with thermal-invariant elastic properties of materials are of interest for resonant device frequency and dimensional stability of precision devices. Here, we demonstrate that the temperature coefficient of elasticity (TCE) of…
Based on the parameters from published ab-inito theoretical and experimental studies, and combining Molecular Dynamics (MD) and kinetic Monte Carlo (KMC) simulations, a framework of multi-scale modeling is developed to investigate the…
Recent advances in scaling up spin-based quantum processors have revealed unanticipated issues related to thermal effects. Microwave pulses required to manipulate and read the qubits are found to overheat the spins environment, which…
Silicon-based quantum emitters are candidates for large-scale qubit integration due to their single-photon emission properties and potential for spin-photon interfaces with long spin coherence times. Here, we demonstrate local writing and…
Bismuth chalcogenides Bi$_2$Se$_3$ and Bi$_2$Te$_3$ are semiconductors, which can be both thermoelectric materials (TE) and topological insulators (TI). Lattice defects arising from vacancies, impurities, or dopants in these materials are…
We demonstrate the suppression of nuclear spin fluctuations in an InAs quantum dot and measure the timescales of the spin narrowing effect. By initializing for tens of milliseconds with two continuous wave diode lasers, fluctuations of the…
We use the two fluid model to determine the conditions under which the nuclear spin-lattice lattice relaxation rate, $T_1$, of candidate heavy quantum critical superconductors can exhibit scaling behavior and find that it can occur if and…
We study the resonance fluorescence properties of an optically active spin 1/2 system, elucidating the effects of a magnetic field on the coherence of the scattered light. We derive a master equation model for this system that reproduces…
Near infrared emission in silicon carbide is relevant for quantum technology specifically single photon emission and spin qubits for integrated quantum photonics, quantum communication and quantum sensing. In this paper we study the…
Silicon carbide (SiC) is rapidly emerging as a leading platform for the implementation of nonlinear and quantum photonics. Here, we find that commercial SiC, which hosts a variety of spin qubits, possesses low optical absorption that can…
Single defects in diamond and especially negatively charged nitrogen vacancy (NV) centers are very promising quantum systems with wide applications in physics and biology. It was shown that their coherence properties can be strongly…
Molecular hydrogen in silicon has been studied by path-integral molecular dynamics simulations in the canonical ensemble. Finite-temperature properties of these point defects were analyzed in the range from 300 to 900 K. Interatomic…
Coherent Synchrotron Radiation (CSR) can play an important role by not only increasing the energy spread and emittance of a beam, but also leading to a potential instability. Previous studies of the CSR induced longitudinal instability were…
The intersection of quantum mechanics and general relativity remains an open frontier in fundamental physics, with few experimentally accessible phenomena connecting the two. Recent theoretical proposals suggest that relativistic proper…
Global quantum networks will benefit from the reliable creation and control of high-performance solid-state telecom photon-spin interfaces. T radiation damage centres in silicon provide a promising photon-spin interface due to their narrow…
Near infrared color centers in silicon are emerging candidates for on-chip integrated quantum emitters, optical access quantum memories and sensing. We access ensemble G color center formation dynamics and radiation-induced atomic disorder…
Fast quantum oscillations of a charge qubit in a double quantum dot fabricated in a Si/SiGe heterostructure are demonstrated and characterized experimentally. The measured inhomogeneous dephasing time T2* ranges from 127ps to ~2.1ns; it…
In this work, we demonstrate initialization and readout of nuclear spins via a negatively charged silicon-vacancy (SiV) electron spin qubit. Under Hartmann-Hahn conditions the electron spin polarization is coherently transferred to the…
Solid-state spin qubits within silicon crystals at mK temperatures show great promise in the realisation of a fully scalable quantum computation platform. Qubit coherence times are limited in natural silicon owing to coupling to the isotope…
Defects with associated electron and nuclear spins in solid-state materials have a long history relevant to quantum information science going back to the first spin echo experiments with silicon dopants in the 1950s. Since the turn of the…