相关论文: Strain analysis of Ge micro disk using precession …
Bragg coherent X-ray diffraction imaging (BCDI) allows the three-dimensional (3D) measurement of lattice strain along the scattering vector for specific microcrystals. If at least three linearly independent reflections are measured, the 3D…
2D materials offer an ideal platform to study the strain fields induced by individual atomic defects, yet challenges associated with radiation damage have so-far limited electron microscopy methods to probe these atomic-scale strain fields.…
Point-spread function of the probe forming optics ($PSF_{optics} $) is reported for the first time in an uncorrected (without multipole correctors) scanning electron microscope (SEM). In an SEM, the electron probe information is lost as the…
Dislocation patterning and self-organization during plastic deformation are associated with work hardening, but the exact mechanisms remain elusive. This is partly because studies of the structure and local strain during the initial stages…
Convergent beam electron diffraction is routinely applied for studying deformation and local strain in thick crystals by matching the crystal structure to the observed intensity distributions. Recently, it has been demonstrated that CBED…
Mechanical strain can be used to control physical properties in materials. The experimental investigation of strain-induced effects at the nanoscale is of importance not only for its fundamental aspects, but also for the development of…
Crystal orientation and strain mapping of an individual curved and asymmetrical core-shell hetero-nanowire is performed based on transmission electron microscopy. It relies on a comprehensive analysis of scanning nanobeam electron…
The n-type Ge-on-Si epitaxial material platform enables a novel paradigm for plasmonics in the mid-infrared, prompting the future development of lab-on-a-chip and subwavelength vibrational spectroscopic sensors. In order to exploit this…
Scanning Transmission Electron Microscopy (STEM) is a critical tool for imaging the properties of materials and biological specimens at atomic scale, yet our understanding of relevant electron beam damage mechanisms is incomplete. Recent…
Based on the cross correlation analysis of the Kikuchi diffraction patterns high-resolution EBSD is a well established method to determine the internal stress in deformed crystalline materials. In many cases, however, the stress values…
The emergence of hexagonal Ge (2H-Ge) as a candidate direct-gap group-IV semiconductor for Si photonics mandates rigorous understanding of its optoelectronic properties. Theoretical predictions of a "pseudo-direct" band gap, characterized…
Strain engineering offers unique control to manipulate the electronic band structure of two-dimensional materials (2DMs) resulting in an effective and continuous tuning of the physical properties. Ad-hoc straining 2D materials has…
To assist in the planning of in situ loading, HEDM experiments by generating synthetic diffraction images of virtual samples in loaded and unloaded states. The user designates a target grain in the virtual sample and specifies the set of…
Graphene is an atomically thin metallic membrane capable of sustaining reversible strain and offers a tempting prospect of controlling its optoelectronic properties via strain. Graphenes exceptional mechanical flexibility and tensile…
The use of fast pixelated detectors and direct electron detection technology is revolutionising many aspects of scanning transmission electron microscopy (STEM). The widespread adoption of these new technologies is impeded by the technical…
Addressing the need for efficient and integrated multiscale crystallographic and defect analyses of advanced materials, this paper presents the implementation of a new multi-configuration detection system, integrating a single…
Compressed sensing algorithms are used to decrease electron microscope scan time and electron beam exposure with minimal information loss. Following successful applications of deep learning to compressed sensing, we have developed a…
We depict the use of x-ray diffraction as a tool to directly probe the strain status in rolled-up semiconductor tubes. By employing continuum elasticity theory and a simple model we are able to simulate quantitatively the strain relaxation…
We report investigation on Fe1+yTexSe1-x single crystals by using scanning transmission electron microscopy (STEM) and electron energy loss spectroscopy (EELS). Both nonsuperconducting samples with excess iron and superconducting samples…
We present an investigation into beam steering and radiation emission by sub-GeV electrons traversing bent silicon crystals. Using 855, 600, and 300~MeV electron beams at the Mainz Microtron (MAMI), we explored orientational coherent…