相关论文: Strain analysis of Ge micro disk using precession …
The technique known as 4D-STEM has recently emerged as a powerful tool for the local characterization of crystalline structures in materials, such as cathode materials for Li-ion batteries or perovskite materials for photovoltaics. However,…
We report the influence of uniaxial tensile mechanical strain in the range 0-2.2% on the phonon spectra and bandstructures of monolayer and bilayer molybdenum disulfide (MoS2) two-dimensional crystals. First, we employ Raman spectroscopy to…
Plan-view transmission electron microscopy (TEM) samples are key to understand the atomic structure and associated properties of materials along their growth orientation, especially for thin films that are stain-engineered onto different…
Nanoscale topological polar textures promise new functionalities for ferroelectric memories and logic, yet their three-dimensional structure and mesoscale organization remain experimentally inaccessible. Here we introduce depth-resolved…
Germanium and silicon-germanium alloys have found entry into Si technology thanks to their compatibility with Si processing and their ability to tailor electronic properties by strain and band-gap engineering. Germanium's potential to…
Scanning transmission electron microscopy (STEM) allows for imaging, diffraction, and spectroscopy of materials on length scales ranging from microns to atoms. By using a high-speed, direct electron detector, it is now possible to record a…
A detailed investigation of the structural and vibrational properties of various prestressed silicon nitride membranes patterned with one-dimensional photonic crystal structures is presented. The tensile stress-related deformation of the…
This work presents how first-principles simulations validated through experimental measurements lead to a new accurate prediction of the expected Raman shift as a function of strain in silicon. Structural relaxation of a strained primitive…
In this work, we investigate the differential voltage generation arising from the direct magnetoelectric (ME) effect in nanoscale composite devices upon magnetization rotation from the magnetic ground state to an out-of-plane (OOP)…
We present energy filtered electron emission spectromicroscopy with spatial and wave-vector resolution on few layer epitaxial graphene on SiC$(000-1) grown by furnace annealing. Low energy electron microscopy shows that more than 80% of the…
The vibrational and electronic properties of 2-dimensinal (2D) materials can be efficiently tuned by external strain due to their good stretchability. Resonant Raman spectroscopy is a versatile tool to study the physics of phonons,…
Dynamic Electrochemical Strain Microscopy (ESM) response of mixed ionic-electronic conductors is analysed in the framework of the Thomas-Fermi screening theory and Vegard law with accounting of the steric effects. The emergence of dynamic…
The direct magnetoelectric (ME) effect resulting from the polarization changes induced in a ferroelectric film by the application of a magnetic field to a ferromagnetic substrate is described using the nonlinear thermodynamic theory. It is…
4D-STEM, in which the 2D diffraction plane is captured for each 2D scan position in the scanning transmission electron microscope (STEM) using a pixelated detector, is complementing and increasingly replacing existing imaging approaches.…
Next-generation, atomically thin devices require in-plane, one-dimensional heterojunctions to electrically connect different two-dimensional (2D) materials. However, the lattice mismatch between most 2D materials leads to unavoidable…
A pulsed neutron imaging technique is used to reconstruct the residual strain within a polycrystalline material from Bragg edge strain images. This technique offers the possibility of a nondestructive analysis of strain fields with a high…
The structure of low-carbon steel after twist extrusion is tested with using electron backscattered diffraction. It has been shown that warm twist extrusion results in grain refinement with conservation of a substantial part of high-angle…
Characterizing long-range electric fields and built-in potentials in functional materials at nano- to micrometer scales is of supreme importance for optimizing devices. E.g., the functionality of semiconductor heterostructures or battery…
Phase engineering by strains in 2D semiconductors is of great importance for a variety of applications. Here, we present a study of strain induced ferroelectric (FE) transition on bismuth oxyselenide (Bi$_2$O$_2$Se) films, a…
Four-dimensional Scanning Transmission Electron Microscopy (4D-STEM) is a powerful technique for high-resolution and high-precision materials characterization at multiple length scales, including the characterization of beam-sensitive…