相关论文: Imaging graphene field-effect transistors on diamo…
Nitrogen-vacancy (NV) centers in diamond have attracted considerable interest in sensing of weak magnetic fields, such as those created by biological systems. Detecting such feeble signals requires near-surface NV centers, to reduce the…
We present a technique that uses an ensemble of nitrogen-vacancy (NV) centers in diamond to image magnetic fields with high spatio-temporal resolution and sensitivity. A focused laser beam is raster-scanned using an acousto-optic deflector…
The nitrogen-vacancy (NV) center is a well utilized system for quantum technology, in particular quantum sensing and microscopy. Fully employing the NV center's capabilities for metrology requires a strong understanding of the behavior of…
We report a Raman spectroscopy study of graphene field-effect transistors (GFET) with a controlled amount of defects introduced in graphene by exposure to electron-beam irradiation. Raman spectra are taken at T = 8 K over a range of back…
We describe here the construction and characterization of a high-resolution optical magnetometer to measure the full vector magnetic field on an ultrathin layer near the surface of the device. This solid-state device is based on quantum…
Owing to the unique electronic spin properties, the nitrogen-vacancy (NV) centers hosted in diamond have emerged as a powerful quantum sensor for various physical parameters and biological species. In this work, a miniature optical-fiber…
We introduce a microwave-assisted spectroscopy technique to determine the relative concentrations of nitrogen vacancy (NV) centers in diamond that are negatively-charged (NV${}^-$) and neutrally-charged (NV${}^0$), and present its…
The nitrogen vacancy (NV) center in diamond has emerged as a leading solid-state quantum sensor for applications including magnetometry, electrometry, thermometry, and chemical sensing. However, an outstanding challenge for practical…
In this letter we present the results of systematic experimental investigations of the effect of different chemical environments on the low frequency resistance fluctuations of single layer graphene field effect transistors (SLG-FET). The…
Establishing a reliable communication interface between the brain and electronic devices is of paramount importance for exploiting the full potential of neural prostheses. Current microelectrode technologies for recording electrical…
In recent years diamond magnetometers based on the nitrogen-vacancy (NV) center have been of considerable interest for magnetometry applications at the nanoscale. An interesting application which is well suited for NV centers is the study…
Using first-principle electronic structure calculations, we show a metal- semiconductor transition of a metallic graphene nanoribbon with zigzag edges induced by substitutional doping of Nitrogen or Boron atoms at the edges. A field effect…
We fabricate back-gated field effect transistors using Niobium electrodes on mechanically exfoliated monolayer graphene and perform electrical characterization in the pressure range from atmospheric down to 10-4 mbar. We study the effect of…
Ensembles of nitrogen-vacancy (NV) centers in diamond are versatile quantum sensors with broad applications in the physical and life sciences. The concentration of neutral substitutional nitrogen ([N$_\text{s}^0$]) strongly influences…
Graphene solution-gated field-effect transistors (SGFETs) are a promising platform for the recording of cell action potentials due to the intrinsic high signal amplification of graphene transistors. In addition, graphene technology fulfils…
We performed detailed studies of the current-voltage characteristics in graphene/MoS2/metal vertical field-effect transistors. Owing to its low density of states, the Fermi level in graphene is very sensitive to its carrier density and thus…
The photoluminescence of nitrogen-vacancy (NV) centers in diamond nanoparticles exhibits specific properties as compared to NV centers in bulk diamond. For instance large fluctuations of lifetime and brightness from particle to particle…
We give instructions for the construction and operation of a simple apparatus for performing optically detected magnetic resonance measurements on diamond samples containing high concentrations of nitrogen-vacancy (NV) centers. Each NV…
Graphene field-effect transistors are widely used for development of biosensors. However, certain fundamental questions about details of their functioning are not fully understood yet. One of these questions is the presence of gate…
We have studied the graphene/gold interface by means of density functional theory (DFT) and scanning tunneling spectroscopy (STS). Weak interaction between graphene and the underlying gold surface leaves unperturbed Dirac cones in the…