相关论文: Imaging graphene field-effect transistors on diamo…
Formation and excitation energies as well charge transition levels, are determined forthe substitutional nitrogen (Ns),the vacancy (V) and related point defects (NV, NVH, N2, N2V and V2) by screened non-local hybrid density functional…
The prospects of using nanofilms of indium-containing III-V semiconductors, gold and single-layer graphene in magnetic field sensors, intended for application in radiation environment were evaluated on the results of testing in neutron…
Nitrogen vacancy (NV) centers in diamond are optically addressable and versatile light-matter interfaces with practical application in magnetic field sensing, offering the ability to operate at room temperature and reach sensitivities below…
Diamonds with nitrogen-vacancy (NV) center ensembles are one of the most promising solid-state quantum platforms for various sensing applications. The combination of a long spin dephasing time ($T_2^*$) and a high NV center concentration is…
Understanding the profile of a qubit's wavefunction is key to its quantum applications. Unlike conducting systems, where a scanning tunneling microscope can be used to probe the electron distribution, there is no direct method for…
Nitrogen vacancy (NV) centers in diamond have developed into a powerful solid-state platform for compact quantum sensors. However, high sensitivity measurements usually come with additional constraints on the pumping intensity of the laser…
The long-lived electronic spin of the nitrogen-vacancy (NV) center in diamond is a promising quantum sensor for detecting nanoscopic magnetic and electric fields in a variety of experimental conditions. Nevertheless, an outstanding…
During the last years, Graphene based Field Effect Transistors (GFET) have shown outstanding RF performance; therefore, they have attracted considerable attention from the electronic devices and circuits communities. At the same time,…
The interplay between ion beam modification techniques in the MeV range and the controlled generation of negatively charged nitrogen-vacancy (NV-) centers in nitrogen-doped synthetic diamond crystals is explored. An experimental approach…
Quantum sensors based on the nitrogen-vacancy (NV) centre in diamond are rapidly advancing from scientific exploration towards the first generation of commercial applications. While significant progress has been made in developing suitable…
Despite the considerable interest for antiferromagnets which appeared with the perspective of using them for spintronics, their experimental study, including the imaging of antiferromagnetic textures, remains a challenge. To address this…
We investigate the optical properties of edge-functionalized graphene nanosystems, focusing on the formation of junctions and charge transfer excitons. We consider a class of graphene structures which combine the main electronic features of…
We demonstrate a technique to nanofabricate nitrogen vacancy (NV) centers in diamond based on broad-beam nitrogen implantation through apertures in electron beam lithography resist. This method enables high-throughput nanofabrication of…
We investigate the transport properties of graphene underneath metal to reveal whether the carrier density in graphene underneath source/drain electrodes in graphene field-effect transistors is fixed. The resistance of the graphene/Ni…
Negatively charged nitrogen-vacancy centres in diamond are promising quantum magnetic field sensors. Laser threshold magnetometry has been a theoretical approach for the improvement of NV-centre ensemble sensitivity via increased signal…
We present chip-scale transmission measurements for three key components of a GaP-on-diamond integrated photonics platform: waveguide-coupled disk resonators, directional couplers, and grating couplers. We also present proof-of-principle…
An analytical device model for a graphene nanoribbon phototransistor (GNR-PT) is presented. GNR-PT is based on an array of graphene nanoribbons with the side source and drain contacts, which is sandwiched between the highly conducting…
Graphene is considered to be a promising candidate for future nano-electronics due to its exceptional electronic properties. Unfortunately, the graphene field-effect-transistors (FETs) cannot be turned off effectively due to the absence of…
Fluorescent nanodiamonds containing negatively-charged nitrogen-vacancy (NV$^-$) centers are promising for a wide range of applications, such as for sensing, as fluorescence biomarkers, or to hyperpolarize nuclear spins. NV$^-$ centers are…
Field emission from metals underpinned early vacuum-tube technology, and recent nanoscale engineering made field-emission devices compatible with modern silicon platforms. However, the limited tunability of electron transport in metals has…