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相关论文: Tightly bound excitons in two-dimensional semicond…

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Excitonic properties in the Kagome lattice system, which is produced by quantum wires on semiconductor surfaces, are investigated by using the exact diagonalization of a tight binding model. It is shown that due to the existence of flat…

介观与纳米尺度物理 · 物理学 2009-11-07 H. Ishii , T. Nakayama , J. Inoue

Most semiconductors, in particular III-V compounds, have a complex valence band structure near the band edge, due to degeneracy at the zone center. One peculiar feature is the warping of the electronic dispersion relations, which are not…

强关联电子 · 物理学 2023-07-12 Roland Combescot , Shiue-Yuan Shiau

A theoretical study of the exciton binding energy in the two-dimensional hexagonal boron nitride monolayer is presented within the tight-binding approximation (TBA). A self-consistent equation for the interband electron-hole propagators is…

材料科学 · 物理学 2018-03-28 Zoran Rukelj , Vito Despoja

Exciton binding energy and excited states in monolayers of tungsten diselenide (WSe2) are investigated using the combined linear absorption and two-photon photoluminescence excitation spectroscopy. The exciton binding energy is determined…

材料科学 · 物理学 2015-06-19 Keliang He , Nardeep Kumar , Liang Zhao , Zefang Wang , Kin Fai Mak , Hui Zhao , Jie Shan

A novel type of exciton-phonon bound state -- interlayer polaron -- in a double-layer two-dimensional semiconductor with transition metal dichalcogenides as an example, is predicted. In these systems the interaction of the interlayer…

材料科学 · 物理学 2020-10-06 M. A. Semina , M. M. Glazov , E. Ya. Sherman

In this work, we construct a Wannier tight-binding model for TaS$_2$ under a superlattice potential modulation, based on the Joint Automated Repository for Various Integrated Simulations database established by the U.S. National Institute…

材料科学 · 物理学 2024-12-17 Thi-Nga Do , Godfrey Gumbs

An excitonic insulator phase is expected to arise from the spontaneous formation of electron-hole pairs (excitons) in semiconductors where the exciton binding energy exceeds the size of the electronic band gap. At low temperature, these…

强关联电子 · 物理学 2022-09-02 Selene Mor , Marc Herzog , Claude Monney , Julia Stähler

Excitonic effects play a particularly important role in the optoelectronic behavior of two-dimensional (2D) semiconductors. To facilitate the interpretation of experimental photoabsorption and photoluminescence spectra we provide…

介观与纳米尺度物理 · 物理学 2018-01-04 M. Szyniszewski , E. Mostaani , N. D. Drummond , V. I. Fal'ko

Excitonic Bose-Einstein condensation (EBEC) has drawn increasing attention recently with the emergence of 2D materials. A general criterion for EBEC, as expected in an excitonic insulator (EI) state, is to have negative exciton formation…

强关联电子 · 物理学 2023-05-05 Gurjyot Sethi , Martin Cuma , Feng Liu

Excitons are electron-hole pairs appearing below the band gap in insulators and semiconductors. They are vital to photovoltaics, but are hard to obtain with time-dependent density-functional theory (TDDFT), since most standard…

材料科学 · 物理学 2013-05-22 Zeng-hui Yang , Carsten A. Ullrich

We discuss the excitons in flat band systems. Quantum metric plays a central role in determining the properties of single exciton excitation as well as the exciton condensate. While the electrons and holes are extremely heavy in flat bands,…

介观与纳米尺度物理 · 物理学 2024-07-02 Xuzhe Ying , K. T. Law

Common wisdom asserts that bound excitons cannot form in high-dimensional (d>1) metallic structures because of their overwhelming screening and unavoidable resonance with nearby continuous bands. Strikingly, here we illustrate that this…

介观与纳米尺度物理 · 物理学 2014-09-29 Yufeng Liang , Ryan Soklaski , Shouting Huang , Matthew W. Graham , Robin Havener , Jiwoong Park , Li Yang

In a recent letter [J. -H. Choi et al. Phys. Rev. Lett. 115, 066403 (2015)], a universal linear relation between the binding energy Eb of exciton and the band gap Eg is found in different quasi-2D semiconductors. However, when one…

材料科学 · 物理学 2017-06-07 Mingliang Zhang , Ling-Yi Huang , Xu Zhang , Gang Lu

Excitonic insulators (EI) arise from the formation of bound electron-hole pairs (excitons) in semiconductors and provide a solid-state platform for quantum many-boson physics. Strong exciton-exciton repulsion is expected to stabilize…

The scaling of exciton binding energy in semiconductor quantum wires is investigated theoretically through a non-variational, fully three-dimensional approach for a wide set of realistic state-of-the-art structures. We find that in the…

凝聚态物理 · 物理学 2009-10-30 F. Rossi , G. Goldoni , E. Molinari

Exciton condensation in semiconductors and semimetals has long been predicted but remains elusive. In a semiconductor, condensation occurs when the exciton binding energy matches the band gap. This binding energy results from a balance…

强关联电子 · 物理学 2025-06-11 Harley D. Scammell , Oleg P. Sushkov

We consider a model describing the one-dimensional confinement of an exciton in a symmetrical, rectangular quantum-well structure and derive upper and lower bounds for the binding energy $E_b$ of the exciton. Based on these bounds, we study…

凝聚态物理 · 物理学 2009-10-31 B. Gerlach , J. Wuesthoff , M. O. Dzero , M. A. Smondyrev

Understanding the dynamics of excitons in two dimensional semiconductors requires a theory that incorporates the essential physics distinct from their three-dimensional counterparts. In addition to the modified dielectric environment,…

介观与纳米尺度物理 · 物理学 2019-01-30 Pengke Li , Ian Appelbaum

The optical response of phosphorene can be gradually changed by application of moderate uniaxial compression, as the material undergoes the transition into an indirect gap semiconductor and eventually into a semimetal. Strain tunes not only…

材料科学 · 物理学 2015-04-01 L. Seixas , A. S. Rodin , A. Carvalho , A. H. Castro Neto

A theoretical model, which relates the binding energy of a positively charged exciton in a quantum dot with the confinement energy is presented. It is shown that the binding energy, defined as the energy difference between the corresponding…

介观与纳米尺度物理 · 物理学 2016-12-21 M. R. Molas , A. Wojs , A. A. L. Nicolet , A. Babinski , M. Potemski
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