相关论文: High temperature induced B1 to B2 phase transforma…
High quality vanadium sesquioxide V2O3 films (170-1100 {\AA}) were grown using the pulsed laser deposition technique on (0001)-oriented sapphire substrates, and the effects of film thickness on the lattice strain and electronic properties…
Using x-ray powder diffraction technique at various temperatures and applied magnetic fields, we have studied the magnetostructural properties of Ce(Fe0.95Si0.05)2. The x-ray diffraction data establish quantitative relationships between…
Vanadium silicide (V$_3$Si) is a promising superconductor for integration with silicon-based electronics, however the interfacial growth kinetics have a strong influence on the resulting superconducting properties and are not yet fully…
Inherent properties of superconducting Bi2Sr2CaCu2O8+x films, such as the high superconducting transition temperature Tc, efficient Josephson coupling between neighboring CuO layers, and fast quasiparticle relaxation dynamics, make them a…
Bi2Sr2Ca1Cu2O8+d (Bi-2212) thin films with thicknesses less than 50 nm (<20 unit cells) are grown by pulsed laser deposition (PLD) onto (001) LaAlO3 (LAO) single crystal substrates. Phase-pure and smooth c-axis oriented Bi-2212 films with…
Phase stability of various phases of MX (M = Ti, Zr; X = C, N) at equilibrium and under pressure is examined based on first-principles calculations of the electronic and phonon structures. The results reveal that all B1 (NaCl-type) MX…
We report on a detailed analysis of the superconducting properties of boron-doped silicon films grown along the 001 direction by Gas Immersion Laser Doping. The doping concentration cB has been varied up to approx. 10 at.% by increasing the…
The effects of multiwalled carbon nanotubes (NTs) on low-temperature phase transformations in 5CB were studied by means of differential scanning calorimetry (DSC), low-temperature photoluminescence and measurements of electrical…
Here we demonstrate the controlled growth of Bi(110) and Bi(111) films on an (insulating) $\alpha$-Al$_2$O$_3$(0001) substrate by surface X-ray diffraction and X-ray reflectivity using synchrotron radiation. At temperatures as low as 40 K,…
Here, we report the full-fledged journey towards the material synthesis and characterization of few-layered/thin WSe$_2$ using sputtered W-films on SiO$_2$/Si substrates followed by electrical studies under dark and illumination conditions.…
We have investigated heteroepitaxial films of Sm-doped BiFeO3 with a Sm-concentration near a morphotropic phase boundary. Our high-resolution synchrotron X-ray diffraction, carried out in a temperature range of 25C to 700C, reveals…
Ta (100 nm) / NdFeB (5 $\mu$m) / Ta (100 nm) films have been deposited onto Si substrates using triode sputtering (deposition rate ~ 18 $\mu$m/h). A 2-step procedure was used : deposition at temperatures up to 400 C followed by ex-situ…
We report the growth of high-quality c-axis-oriented epitaxial MgB2 thin films by using a pulsed laser deposition technique. The thin films grown on (1`1 0 2) Al2O3 substrates show a Tc of 39 K. The critical current density in zero field is…
In this work, the results of fabricating ultra thin VO$_2$ films on the technologically relevant amorphous SiO$_2$ surface using reactive DC magnetron sputtering are presented. Results indicate that a post deposition anneal in low partial…
In Type II superconductors, the vortex lattice can exhibit "inverse melting," transitioning from a liquid to a crystalline solid as temperature increases. While recently observed via scanning tunneling microscopy in a 20 nm thick amorphous…
Nanostructured TiO2 thin films were prepared by pulsed laser deposition (PLD) on indium doped tin oxide (ITO) substrates. Results from X-ray photoelectron spectroscopy (XPS) show that Ti 2p core level peaks shift toward the lower binding…
Al-doped ZnO thin films were deposited using reactive high power impulse magnetron sputtering at substrate temperatures between room temperature and 600 $\bullet$ C. Two sample series with different oxygen partial pressures were studied.…
The interface between hexagonal ZnO films and cubic MgO (001) substrates, fabricated through molecular beam epitaxy, are thoroughly investigated. X-ray diffraction and (scanning) transmission electron microscopy reveal that, at the…
For a detailed study on the semiconductor to metal transition (SMT) in ZnO thin films doped with Al in the concentration range from 0.02 to 2%, we grew these films on (0001) sapphire substrates using sequential pulsed laser deposition. It…
High quality MgB2 thin films have been obtained by pulsed laser deposition both on MgO and on Al2O3 substrates using different methods. In the standard two-step procedure, an amorphous precursor layer is deposited at room temperature…