相关论文: High-angular resolution electron backscatter diffr…
High angular resolution electron backscatter diffraction (HR-EBSD) affords an increase in angular resolution, as compared to 'conventional' Hough transform based EBSD, of two orders of magnitude, enabling measurements of relative…
For high (angular) resolution electron backscatter diffraction (HR-EBSD), the selection of a reference diffraction pattern (EBSP0) significantly affects the precision of the calculated strain and rotation maps. This effect was demonstrated…
Electron backscatter diffraction (EBSD) is a well-established method of characterisation for crystalline materials. This technique can rapidly acquire and index diffraction patterns to provide phase and orientation information about the…
In materials science and particularly electron microscopy, Electron Back-scatter Diffraction (EBSD) is a common and powerful mapping technique for collecting local crystallographic data at the sub-micron scale. The quality of the…
The dislocation microstructure developing during plastic deformation strongly influences the stress-strain properties of crystalline materials. The novel method of high resolution electron backscatter diffraction (HR-EBSD) offers a new…
Accurately determining the crystallographic structure of a material, organic or inorganic, is a critical primary step in material development and analysis. The most common practices involve analysis of diffraction patterns produced in…
Understanding the local fracture resistance of microstructural features. such as brittle inclusions, coatings, and interfaces at the microscale under complex loading conditions is critical for microstructure-informed design of materials. In…
Electron backscatter diffraction (EBSD) is a technique used to measure crystallographic features in the scanning electron microscope. The technique is highly automated and readily accessible in many laboratories. EBSD pattern indexing is…
We examine the effect of pattern quality on the output of high-angular resolution electron backscatter diffraction (HR-EBSD) analyses. Band contrast, as a proxy for pattern quality, was varied by adjusting the number of frames averaged per…
Mechanical testing of micropillars is a field that involves new physics, as the behaviour of materials is non-deterministic at this scale. To better understand their deformation mechanisms we applied 3-dimensional high angular resolution…
Microstructure characterisation has been greatly enhanced through the use of electron backscatter diffraction (EBSD), where rich maps are generated through analysis of the crystal phase and orientation in the scanning electron microscope…
Precise and accurate determination of crystallographic orientation is crucial for engineering van der Waals heterostructures, where the twist angle between layers controls emergent electronic and optical properties. While Electron…
We present a few recent developments in the field of electron backscatter diffraction (EBSD). We highlight how open source algorithms and open data formats can be used to rapidly to develop microstructural insight of materials. We include…
Electron backscatter diffraction (EBSD) in the scanning electron microscope is routinely used for microstructural characterisation of polycrystalline materials. Maps of EBSD data are typically acquired at high stage tilt and slow scan…
High-Resolution Electron Backscatter Diffraction (HR-EBSD) has advanced rapidly in recent years, significantly improving elastic strain measurements and dislocation density evaluation with submicron spatial resolution. To achieve better…
We present spherical analysis of electron backscatter diffraction (EBSD) patterns with two new algorithms: (1) band localisation and band profile analysis using the spherical Radon transform; (2) orientation determination using spherical…
We present a simple 'shift-and-add' based improvement in the angular resolution of single electron backscatter diffraction (EBSD) patterns. Sub-pixel image registration is used to measure the (sub-pixel) difference in projection parameters…
Lattice strain measurement of nanoscale semiconductor devices is crucial for the semiconductor industry as strain substantially improves the electrical performance of transistors. High resolution scanning transmission electron microscopy…
We report a first exploration of High-angular-Resolution Electron Backscatter Diffraction, without using simulated Electron Backscatter Diffraction patterns as a reference, for absolute stress and orientation measurements in polycrystalline…
We describe a lattice-based crystallographic approximation for the analysis of distorted crystal structures via Electron Backscatter Diffraction (EBSD) in the scanning electron microscope. EBSD patterns are closely linked to local lattice…