相关论文: Valley-Layer Coupling: A New Design Principle for …
Using the valley degree of freedom as a carrier of information for storage and processing, valley polarization plays a crucial role. A variety of mechanisms for valley polarization have been proposed, among which the valley-layer coupling…
Manipulating the valley degree of freedom to encode information for potential valleytronic devices has ignited a new direction in solid-state physics. A significant, fundamental challenge in the field of valleytronics is how to generate and…
Spintronics, a technology harnessing electron spin for information transmission, offers a promising avenue to surpass the limitations of conventional electronic devices. While the spin directly interacts with the magnetic field, its control…
Underpinning the field of "valleytronics" is the coupling of the helicity of circularly polarized light to the valley degree of freedom, and this remains the only known lightform to exhibit this remarkable effect. Here we show that on…
Valleytronics is rapidly emerging as an exciting area of basic and applied research. In two dimensional systems, valley polarisation can dramatically modify physical properties through electron-electron interactions as demonstrated by such…
Despite much anticipation of valleytronics as a candidate to replace the ageing CMOS-based information processing, its progress is severely hindered by the lack of practical ways to manipulate valley polarization all-electrically in an…
Valleytronics is one of the breaking-through to the technology of electronics, which provides a new degree of freedom to manipulate the properties of electrons. Combining DFT calculations, optical absorption analysis and the linear…
Electrons in two-dimensional materials possess an additional quantum attribute, the valley pseudospin, labelled as $\mathbf{K}$ and $\mathbf{K}^{\prime}$ -- analogous to the spin up and spin down. The majority of research to achieve…
The band structure of transition metal dichalcogenides (TMDCs) with valence band edges at different locations in the momentum space could be harnessed to build devices that operate relying on the valley degree of freedom. To realize such…
Memory or transistor devices based on electron's spin rather than its charge degree of freedom offer certain distinct advantages and comprise a cornerstone of spintronics. Recent years have witnessed the emergence of a new field,…
Two-dimensional (2D) ferrovalley semiconductor (FVSC) with spontaneous valley polarization offers an exciting material platform for probing Berry phase physics. How FVSC can be incorporated in valleytronic device applications, however,…
Valleytronics rooted in the valley degree of freedom is of both theoretical and technological importance as it offers additional opportunities for information storage and electronic, magnetic and optical switches. In analogy to…
Valley, the energy extrema in the electronic band structure at momentum space, is regarded as a new degree of freedom of electrons, in addition to charge and spin. The studies focused on valley degree of freedom now form an emerging field…
Valleytronics exploits non-equivalent energy extrema in the electronic band structure of crystalline solids -- the valley degree of freedom -- to encode, manipulate, and read out information. The advent of 2D materials, first graphene and…
The electron's charge and spin degrees of freedom are at the core of modern electronic devices. With the in-depth investigation of two-dimensional materials, another degree of freedom, valley, has also attracted tremendous research…
Recent advances in condensed matter physics have shown that the valley degree of freedom of electrons in 2D materials with hexagonal symmetry, such as graphene, h-BN, and TMDs, can be efficiently exploited, leading to the emergent field of…
The tunnel current (TC) and valley current (VC) are crucial in realizing high-speed and energy-saving in next-generation devices. This paper presents the TC and VC link in the partially overlapped graphene. Under the vertical electric…
Valley, as a new degree of freedom for electrons, has drawn considerable attention due to its significant potential for encoding and storing information. Lifting the energy degeneracy to achieve valley polarization is necessary for…
In solid, the crystalline structure can endow electron an internal degree of freedom known as valley, which characterizes the degenerate energy minima in momentum space. The recent success in optical pumping of valley polarization in 2D…
So far, selective excitation of a desired valley in the Brillouin zone of a hexagonal two-dimensional material has relied on using circularly polarized fields. We theoretically demonstrate a way to induce, control, and read valley…