中文
相关论文

相关论文: InSe as a case between 3D and 2D layered crystals …

200 篇论文

Complex electron-microscopic, energy-dispersed and wide-temperature optical absorption and photoluminescence (PL) investigations are carried out into Bridgeman-grown layered In2Se3 crystals. It is shown that In2Se3 crystals as a whole have…

材料科学 · 物理学 2018-02-09 Yu. I. Zhirko , V. M. Grekhov , Z. D. Kovalyuk

Thermoelectric properties of monolayer indium selenide (InSe) are investigated by using Boltzman transport theory and first-principles calculations as a function of Fermi energy and crystal orientation. We find that the maximum power factor…

材料科学 · 物理学 2017-09-05 Nguyen T. Hung , Ahmad R. T. Nugraha , R. Saito

Interactions among a collection of particles generate many-body effects in solids resulting in striking modifications of material properties. The heavy carrier mass that yields strong interactions and gate control of carrier density over a…

Atomically thin films of III-VI post-transition metal chalcogenides (InSe and GaSe) form an interesting class of two-dimensional semiconductor that feature strong variations of their band gap as a function of the number of layers in the…

InSe, a newly rediscovered two-dimensional (2D) semiconductor, possesses superior electrical and optical properties as a direct bandgap semiconductor with high mobility from bulk to atomically thin layers, drastically different from…

Two-dimensional (2D) indium selenide (InSe) is a layered semiconductor with high electron mobility and a tunable band gap ranging from 1.25 eV in the bulk to 2.8 eV in the monolayer limit. These properties make these materials strong…

Layered indium selenide (InSe), a new two-dimensional (2D) material with a hexagonal structure and semiconducting characteristic, is gaining increasing attention owing to its intriguing electronic properties. Here, by using first-principles…

材料科学 · 物理学 2017-12-19 Andrey A. Kistanov , Yongqing Cai , Kun Zhou , Sergey V. Dmitriev , Yong-Wei Zhang

Atomically thin, two-dimensional (2D) indium selenide (InSe) has attracted considerable attention due to large tunability in the band gap (from 1.4 to 2.6 eV) and high carrier mobility. The intriguingly high dependence of band gap on layer…

材料科学 · 物理学 2018-03-28 Yuanhui Sun , Shulin Luo , Xin-Gang Zhao , Koushik Biswas , Song-Lin Li , Lijun Zhang

Van der Waals materials offer a wide range of atomic layers with unique properties that can be easily combined to engineer novel electronic and photonic devices. A missing ingredient of the van der Waals platform is a two-dimensional…

Enhancement of radiative coupling efficiency between out-of-plane excitonic emitters in an indium selenide (InSe) film and an integrated waveguide formed by silicon (Si) Mie-resonant nanodisks is experimentally studied. Photoluminescence…

Two-dimensional (2D) perovskite materials have recently re-attracted intense research interest for applications in photovoltaics and optoelectronics. As a consequence of the dielectric and quantum confinement effect, they show strongly…

Charge neutrality and their expected itinerant nature makes excitons potential transmitters of information. However, exciton mobility remains inaccessible to traditional optical experiments that only create and detect excitons with…

On-chip integration of two-dimensional (2D) materials offers great potential for the realization of novel optoelectronic devices in different photonic platforms. In particular, indium selenide (InSe) is a very promising 2D material due to…

Interlayer excitons are observed coexisting with intralayer excitons in bi-layer, few-layer, and bulk MoSe2 single crystals by confocal reflection contrast spectroscopy. Quantitative analysis using the Dirac-Bloch-Equations provides…

材料科学 · 物理学 2018-06-13 Jason Horng , Tineke Stroucken , Long Zhang , Eunice Y. Paik , Hui Deng , Stephan W. Koch

InSe, a member of the layered materials family, is a superior electronic and optical material which retains a direct bandgap feature from the bulk to atomically thin few-layers and high electronic mobility down to a single layer limit. We,…

The two-dimensional (2D) semiconductor indium selenide (InSe) has attracted significant interest due its unique electronic band structure, high electron mobility and wide tunability of its band gap energy achieved by varying the layer…

材料科学 · 物理学 2020-04-29 Yuanhui Sun , Yawen Li , Tianshu Li , Koushik Biswas , Amalia Patanè , Lijun Zhang

Exciton binding energy and excited states in monolayers of tungsten diselenide (WSe2) are investigated using the combined linear absorption and two-photon photoluminescence excitation spectroscopy. The exciton binding energy is determined…

材料科学 · 物理学 2015-06-19 Keliang He , Nardeep Kumar , Liang Zhao , Zefang Wang , Kin Fai Mak , Hui Zhao , Jie Shan

Indium selenide, In2Se3, has recently attracted growing interest due to its novel properties, including room temperature ferroelectricity, outstanding photoresponsivity, and exotic in-plane ferroelectricity, which open up new regimes for…

Photoluminescence data from single, self-assembled InAs/InP quantum dots in magnetic fields up to 7 T are presented. Exciton g-factors are obtained for dots of varying height, corresponding to ground state emission energies ranging from 780…

介观与纳米尺度物理 · 物理学 2009-11-13 D. Kim , W. Sheng , P. J. Poole , D. Dalacu , J. Lefebvre , J. Lapointe , M. E. Reimer , G. C. Aers , R. L. Williams

Hybrid integration of layered van der Waals (vdW) semiconductors with dielectric resonant structures provides an effective approach for controlling excitonic emission dynamics. Here, we demonstrate Purcell-enhanced spontaneous emission from…

介观与纳米尺度物理 · 物理学 2026-05-12 A. I. Veretennikov , E. A. Shepelev , A. S. Shorokhov , P. A. Alekseev , I. A. Eliseyev , A. A. Fedyanin , M. V. Rakhlin
‹ 上一页 1 2 3 10 下一页 ›