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Edge engineering is important for both fundamental research and applications as the device size decreases to nanometer scale. This is especially the case for graphene because a graphene edge shows totally different electronic properties…

介观与纳米尺度物理 · 物理学 2022-12-14 Taisuke Ochi , Masahiro Kamada , Takamoto Yokosawa , Kozo Mukai , Jun Yoshinobu , Tomohiro Matsui

Graphene is attracting vast interest due to its superior electronic and mechanical properties. However, structure and electronic properties of its edge are often neglected, although they are important for nanoscale devices because the edge…

介观与纳米尺度物理 · 物理学 2022-08-25 Takamoto Yokosawa , Masahiro Kamada , Taisuke Ochi , Yuki Koga , Rin Takehara , Masahiro Hara , Tomohiro Matsui

We studied, by scanning tunneling microscopy, the morphology of nanopits of monolayer depth created at graphite surfaces by hydrogen plasma etching under various conditions such as H$_2$ pressure, temperature, etching time, and RF power of…

介观与纳米尺度物理 · 物理学 2019-08-29 Tomohiro Matsui , Hideki Sato , Kazuma Kita , André E. B. Amend , Hiroshi Fukuyama

The edges of graphene nanoribbons (GNRs) have attracted much interest due to their potentially strong influence on GNR electronic and magnetic properties. Here we report the ability to engineer the microscopic edge termination of high…

We investigate the etching of a pure hydrogen plasma on graphite samples and graphene flakes on SiO$_2$ and hexagonal Boron-Nitride (hBN) substrates. The pressure and distance dependence of the graphite exposure experiments reveals the…

We report a study of graphene and graphene field effect devices after exposure to a series of short pulses of oxygen plasma. We present data from Raman spectroscopy, back-gated field-effect and magneto-transport measurements. The intensity…

介观与纳米尺度物理 · 物理学 2011-02-15 Isaac Childres , Luis A. Jauregui , Jifa Tian , Yong P. Chen

Theory has predicted rich and very distinct physics for graphene devices with boundaries that follow either the armchair or zigzag crystallographic directions. A prerequisite to disclose this physics in experiment is to be able to produce…

We present low-temperature Raman measurements on gate tunable graphene encapsulated in hexagonal boron nitride, which allows to study in detail the Raman G and 2D mode frequencies and line widths as function of the charge carrier density.…

介观与纳米尺度物理 · 物理学 2023-02-15 Jens Sonntag , Kenji Watanabe , Takashi Taniguchi , Bernd Beschoten , Christoph Stampfer

The edge states that emerge at hydrogen-terminated zigzag edges embedded in dominant armchair edges of graphite are carefully investigated by ultrahigh-vacuum scanning tunneling microscopy (STM) measurements. The edge states at the zigzag…

材料科学 · 物理学 2009-11-11 Yousuke Kobayashi , Ken-ichi Fukui , Toshiaki Enoki , Koichi Kusakabe

We present Raman spectroscopy measurements of non-etched graphene nanoribbons, with widths ranging from 15 to 160 nm, where the D-line intensity is strongly dependent on the polarization direction of the incident light. The extracted edge…

介观与纳米尺度物理 · 物理学 2014-12-10 B. Terrés , S. Reichardt , C. Neumann , K. Watanabe , T. Taniguchi , C. Stampfer

We study a crystallographic etching process of graphene nanostructures where zigzag edges can be prepared selectively. The process involves heating exfoliated single-layer graphene samples with a predefined pattern of antidot arrays in an…

Graphite is a well-studied material with known electronic and optical properties. Graphene, on the other hand, which is just one layer of carbon atoms arranged in a hexagonal lattice, has been studied theoretically for quite some time but…

介观与纳米尺度物理 · 物理学 2015-05-13 F. Molitor , D. Graf , C. Stampfer , T. Ihn , K. Ensslin

We investigate etched single-layer graphene nanoribbons with different widths ranging from 30 to 130 nm by confocal Raman spectroscopy. We show that the D-line intensity only depends on the edge-region of the nanoribbon and that…

介观与纳米尺度物理 · 物理学 2011-05-06 Dominik Bischoff , Johannes Güttinger , Susanne Dröscher , Thomas Ihn , Klaus Ensslin , Christoph Stampfer

Creating defects in graphene by hydrogenation, either to achieve hydrogen chemisorption or partial etching, is a way to open an electronic band gap in graphene. Understanding the range of stability conditions of partially etched or…

Raman spectroscopy, a fast and nondestructive imaging method, can be used to monitor the doping level in graphene devices. We fabricated chemical vapor deposition (CVD) grown graphene on atomically flat hexagonal boron nitride (hBN) flakes…

材料科学 · 物理学 2013-12-09 Kanokporn Chattrakun , Shengqiang Huang , K. Watanabe , T. Taniguchi , A. Sandhu , B. J. LeRoy

We report a confocal Raman study on edges of single layer graphene. It is found that edge orientations could be identified by G mode besides D mode. We observe that G mode at edges of single layer graphene exhibits polar behaviors and…

材料科学 · 物理学 2010-08-03 Chunxiao Cong , Ting Yu , Haomin Wang

We report an atomically-resolved scanning tunneling microscopy (STM) investigation of the edges of graphene grains synthesized on Cu foils by chemical vapor deposition (CVD). Most of the edges are macroscopically parallel to the zigzag…

介观与纳米尺度物理 · 物理学 2011-09-20 Jifa Tian , Helin Cao , Wei Wu , Qingkai Yu , Yong P. Chen

We study theoretically the coherent electron focusing in graphene nanoribbons. Using semiclassical and numerical tight binding calculations we show that perfect armchair edges give rise to equidistant peaks in the focusing spectrum. In the…

介观与纳米尺度物理 · 物理学 2010-03-22 Peter Rakyta , Andor Kormanyos , Jozsef Cserti , Pekka Koskinen

Edge structure of graphene has a significant influence on its electronic properties. However, control over the edge structure of graphene domains on insulating substrates is still challenging. Here we demonstrate edge control of graphene…

The atomic structure of graphene edges is critical in determining the electrical, magnetic, and chemical properties of truncated graphene structures, notably nanoribbons. Unfortunately, graphene edges are typically far from ideal and suffer…

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