相关论文: Integrated impedance bridge for absolute capacitan…

We have developed a highly-sensitive integrated capacitance bridge for quantum capacitance measurements. Our bridge, based on a GaAs HEMT amplifier, delivers attofarad (aF) resolution using a small AC excitation at or below kT over a broad…

We show that a cryogenic amplifier composed of a homemade GaAs high-electron-mobility transistor (HEMT) is suitable for current-noise measurements in a mesoscopic device at dilution-refrigerator temperatures. The lower noise characteristics…

We present proof-of-operation for a new method of electron thermometry using microwave impedance of a hafnium micro-absorber. The new method leads to an ultimate THz-range detector suitable for microwave readout and frequency division…

High Electron Mobility Transistors (HEMTs) are most suitable for harsh environments as they operate reliably under extreme conditions such as high voltages, high temperatures, radiation exposure and corrosive atmospheres. In this article,…

We have designed and characterized a cryogenic amplifier for use in $^3$He NMR spectrometry. The amplifier, with a power consumption of $\sim 2.5$ mW, works at temperatures down to 4~K. It has a hi-impedance input for measuring a signal…

To search for dark matter candidates with masses below $\mathcal{O}$(MeV), the SPLENDOR (Search for Particles of Light dark mattEr with Narrow-gap semiconDuctORs) experiment is developing novel narrow-bandgap semiconductors with electronic…

We employ a cryogenic High Electron Mobility Transistor (HEMT) amplifier to increase the bandwidth of a charge detection setup with a quantum point contact (QPC) charge sensor. The HEMT is operating at 1K and the circuit has a bandwidth of…

In the last 60 years conventional solid and electrolyte gating allowed sizable modulations of the surface carrier concentration in metallic superconductors resulting in tuning their conductivity and changing their critical temperature.…

The SPLENDOR Collaboration studies novel narrow-gap semiconductors and engineered a substrate agnostic detector platform to achieve $\mathcal{O}$(meV) energy sensitivity designed for low mass dark matter searches. This was achieved using…

The InGaAs-InAlAs-InP high electron mobility transistor (InP HEMT) is the preferred active device used in a cryogenic low noise amplifier (LNA) for sensitive detection of microwave signals. We observed that an InP HEMT 0.3-14GHz LNA at 2K,…

The cryogenic performance of GaN-based HEMTs (high-electron-mobility transistors) is systematically investigated by the direct current (DC) and low-frequency noise (LFN) characteristics within the temperature (T) range from 300 K to 4.2 K.…

Large-scale superconducting quantum computers require massive numbers of high-performance cryogenic low-noise amplifiers (cryo-LNA) for qubit readout. Here we present a C-Band monolithic microwave integrated circuit (MMIC) cryo-LNA for this…

We present the measured baseline ionization resolution of a HEMT-based cryogenic charge amplifier coupled to a CDMS-II detector. The amplifier has been developed to allow massive semiconductor dark matter detectors to retain background…

The fundamental limits of the microwave noise performance of high electron mobility transistors (HEMTs) are of scientific and practical interest for applications in radio astronomy and quantum computing. Self-heating at cryogenic…

We present the noise performance of High Electron Mobility Transistors (HEMT) developed by CNRS-C2N laboratory. Various HEMT's gate geometries with 2 pF to 230 pF input capacitance have been studied at 4 K. A model for both voltage and…

Cryogenic low noise amplifiers based on high electron mobility transistors (HEMTs) are widely used in applications such as radio astronomy, deep space communications, and quantum computing, and the physical mechanisms governing the…

GaN-based HEMTs have the potential to be widely used in high-power and high-frequency electronics while their maximum output powers are limited by high channel temperature induced by near-junction Joule-heating, which degrades device…

We present a cryogenic microwave noise source with a characteristic impedance of 50 $\Omega$, which can be installed in a coaxial line of a cryostat. The bath temperature of the noise source is continuously variable between 0.1 K and 5 K…

Various applications of quantum devices call for an accurate calibration of cryogenic amplification chains. To this end, we present a convenient calibration scheme and use it to accurately measure the total gain and noise temperature of an…

Hybrid superconductor/semiconductor devices constitute a powerful platform where intriguing topological properties can be investigated. Here we present fabrication methods and analysis of Josephson junctions formed by a high-mobility InAs…