相关论文: Epitaxial single layer NbS$_{2}$ on Au(111): synth…

An ab-initio investigation of structural parameters, elastic, electronic, thermodynamic and optical properties of MAX phases Nb2AC (A = S, Sn) has been carried out by the plane wave psedudopotential method based on density functional theory…

The interface and electronic structure of thin (~20-74 nm) Co3O4(110) epitaxial films grown by oxygen-assisted molecular beam epitaxy on MgAl2O4(110) single crystal substrates have been investigated by means of real and reciprocal space…

Vertical and lateral heterogeneous structures of two-dimensional (2D) materials have paved the way for pioneering studies on the physics and applications of 2D materials. A hybridized hexagonal boron nitride (h-BN) and graphene lateral…

A combined experimental and theoretical study of very-low-energy electron diffraction at the (0001) surface of 2H-NbSe2 is presented. Electron transmission spectra have been measured for energies up to 50 eV above the Fermi level with k||…

Here we report the growth of sub-millimeter MgB2 single crystals of various shapes under high pressure in Mg-B-N system. Structure refinement using a single-crystal X-ray diffraction analysis gives lattice parameters a=3.0851(5) A and…

Electrical transport in polycrystalline and single-crystalline (LaS)1+d(NbS2) misfit-layered compounds was measured. Polycrystalline samples were synthesized using S raw materials of different purities (2N or 6N), and single-crystalline…

The effect of layer-by-layer heterostructuring and epitaxial strain on lattice instabilities and related ferroelectric properties is investigated from first principles for the [001]-(PbTiO$_3$)$_1$(PbZrO$_3$)$_1$ superlattice and pure…

Using ab initio method we have studied the structural, elastic, electronic, optical and thermodynamic properties of AlB2 and TaB2. We have used plane wave pseudopotential with generalised gradient approximation as implemented in CASTEP…

AlScN is a new wide bandgap, high-k, ferroelectric material for RF, memory, and power applications. Successful integration of high quality AlScN with GaN in epitaxial layer stacks depends strongly on the ability to control lattice…

In this work we investigate influence of substrate temperature on the surface morphology for substrate coverage below one monolayer. The model of film growth is based on random deposition enriched by limited surface diffusion. Also…

Metal-insulator transition materials such as NbO2 have generated much excitement in recent years for their potential applications in computing and sensing. NbO2 has generated considerable debate over the nature of the phase transition, and…

We investigated the chemical beam epitaxy of GaP1-xNx to correlate the growth parameters with their properties when they are grown on nominally (001)-oriented Si substrates, as desired for the lattice-matched integration of optoelectronic…

We report the epitaxial growth of PdTe$_2$ ultrathin films on topological insulator Bi$_2$Se$_3$. A prominent Moir\'e pattern was observed in STM measurements. The Moir\'e periodicity increases as film thickness decreases, indicating a…

The nucleation and growth of single-layer molybdenum disulfide single domain islands is investigated by in situ low-energy electron microscopy. We study the growth of micron-sized flakes and the correlated flattening process of the gold…

Epitaxial graphene grown on metallic substrates presents, in several cases, a long-range periodic structure due to a lattice mismatch between the graphene and the substrate. For instance, graphene grown on Ir(111), displays a corrugated…

Epitaxial films of NdFeAsO were grown on GaAs substrates by molecular beam epitaxy (MBE). All elements including oxygen were supplied from solid sources using Knudsen cells. The x-ray diffraction pattern of the film prepared with the…

With the aim of investigating the possible integration of opto-electronic devices, epitaxial GaN layers have been grown on Si(111) SOI and on Si/CoSi2/Si(111) using metalorganic chemical vapor deposition. The samples are found to possess a…

Based on first-principles calculations, we propose that a layered electride Mg2O can serve as an effective substrate, in place of metal substrate, to grow honeycomb borophene (h-borophene). We first confirm the thermodynamic stability of…

We report epitaxial growth of a-plane (11-20) AlInN layers nearly-lattice-matched to GaN. Unlike for c-plane oriented epilayers, a-plane Al_{1-x}In_{x}N cannot be simultaneously lattice-matched to GaN in both in-plane directions. We study…

The morphology of epitaxial structures formed in solidification of liquid Au films on the Au(110) surface was studied by molecular dynamics simulation based on a many--body interatomic potential. The (1x2) reconstructed and smooth phase at…