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Low-dimensional materials such as layered semiconductors or carbon nanotubes (CNTs) have been attracting increasing attention in the last decades due to their inherent scaling properties, which become fundamental to sustain the scaling in…

Carbon Nanotube Field Effect Transistor (CNFET) is a promising new technology that overcomes several limitations of traditional silicon integrated circuit technology. In recent years, the potential of CNFET for analog circuit applications…

During the last years, Graphene based Field Effect Transistors (GFET) have shown outstanding RF performance; therefore, they have attracted considerable attention from the electronic devices and circuits communities. At the same time,…

Recently, short channel effects (SCE) and power consumption dissipation problems pose big challenges which need imperative actions to be taken to deal with for field effect transistor to further scale down as semiconductor technology enters…

Carbon Nanotube (CNT) appears as a promising candidate to shrink field-effect transistors (FET) to the nanometer scale. Extensive experimental works have been performed recently to develop the appropriate technology and to explore DC…

Power grids are critical infrastructures of paramount importance to modern society and their rapid evolution and interconnections has heightened the complexity of power systems (PS) operations. Traditional methods for grid analysis struggle…

Emerging memristor-based array architectures have been effectively employed in non-volatile memories and neuromorphic computing systems due to their density, scalability and capability of storing information. Nonetheless, to demonstrate a…

The lack of an easily realizable complementary circuit technology offering low static power consumption has been limiting the utilization of other semiconductor materials than silicon. In this publication, a novel depletion mode JFET based…

A novel method for extracting threshold voltage and substrate effect parameters of MOSFETs with constant current bias at all levels of inversion is presented. This generalized constant-current (GCC) method exploits the charge-based model of…

This paper presents a low-power cache architecture based on the series interconnection of conventional 6-transistor static random-access memory (6T SRAM) cells. The proposed approach aims to reduce leakage power in SRAM-based cache memories…

This work investigates the transient and dynamical behavior of hybrid AC/DC systems using dual-port grid-forming (GFM) control. A generalized modeling framework for hybrid AC/DC networks is first introduced that accounts for converter,…

We report the batch fabrication of graphene field-effect-transistors (GFETs) with nanoperforated graphene as channel. The transistors were cut and encapsulated. The encapsulated GFETs display saturation regions that can be tuned by…

Gate-all-around Vertical Nanowire Field Effect Transistors (VNWFET) are emerging devices, which are well suited to pursue scaling beyond lateral scaling limitations around 7nm. This work explores the relative merits and drawbacks of the…

Logic circuits consist of devices that can be controlled between two distinct states. The recent demonstration that a superconducting current flowing in a constriction can be controlled via a gate voltage ($V_G$) - can lead to…

In this paper, we take a fresh look at the physics and operation of Negative Capacitance FETs, and provide unambiguous feedback to the device designers by examining NC-FETs' design space for sub-60 mV/dec Subthreshold Swing (SS).…

Recently there has been a lot of progress in the development of economic nonlinear model predictive control (NMPC) schemes for multistage optimal power flow (OPF) problems. However, the additional inclusion of discrete decision variables to…

Power flow analysis plays a crucial role in examining the electricity flow within a power system network. By performing power flow calculations, the system's steady-state variables, including voltage magnitude, phase angle at each bus,…

We have fabricated a grating-gate InGaAs/GaAs field-effect transistor structure with narrow slits between the grating gate fingers. The resonant photoconductive response of this structure has been measured in the sub-terahertz frequency…

The potential barrier between source and gate in HEMTs and between source and channel in MOSFET controls the current output and the velocity injection of electrons in the channel [1], [2]. In non self aligned structures the electric field…

Here we describe the design details and performance of proposed Carry Propagate Adder based on GDI technique. GDI technique is power efficient technique for designing digital circuit that consumes less power as compare to most commonly used…