相关论文: Layer-by-layer resistive switching: multi-state fu…
Twisted oxide membranes represent a promising platform for exploring moire physics and emergent quantum phenomena. However, the presence of amorphous interfacial dead layers in conventional oxide heterostructures impedes coherent coupling…
Ferroelectric domain walls are nanoscale objects that can be created, positioned, and erased on demand. They often embody functional properties that are distinct from the surrounding bulk material. Enhanced conductivity, for instance, is…
The development of novel devices for neuromorphic computing and non-traditional logic operations largely relies on the fabrication of well controlled memristive systems with functionalities beyond standard bipolar behavior and digital…
The weak localization correction to the conductivity in coupled double layer structures is studied both experimentally and theoretically. Statistics of closed paths has been obtained from the analysis of magnetic field and temperature…
We consider mechanism of exchange coupling based on interaction between electrons in nonmagnetic layer. Depending on ratio of inverse time of diffusion of electrons between ferromagnetic layers and ferromagnetic splitting of conducting…
Non-volatile multivalued memory effects caused by magnetic fields, currents, and voltage pulses are studied in Nd_{0.65}Ca_{0.35}MnO_3 and (Nd_{1-y}Sm_{y})_{0.5}Sr_{0.5}MnO_3 (y=0.75) single crystals in the hysteretic region between…
We report on the non-linear in-plane electrical transport in coherently grown [La0.7Sr0.3MnO3/SrTiO3] multilayers with ultrathin (< 3 nm) single layers. Current-induced switching of the conductance, with low conductance at larger currents,…
Neuromorphic devices have gained significant attention as potential building blocks for the next generation of computing technologies owing to their ability to emulate the functionalities of biological nervous systems. The essential…
The resistance of layered conductors with a multisheet Fermi surface (FS), in a high magnetic field, in the immediate vicinity of Lifshic's topological transition when the separate FS sheets are drown together by an external action,…
We investigate the mechanical properties of a layered material with interlayer friction. We propose a model that contains lateral elasticity and interlayer friction to obtain the response function both in the Fourier and real spaces. By…
Information technologies require entangling data stability with encryption for a next generation of secure data storage. Current magnetic memories, ranging from low-density stripes up to high-density hard drives, can ultimately be detected…
Fully-relativistic first-principles calculations of the Fe(001) surface demonstrate that resonant surface (interface) states may produce sizeable tunneling anisotropic magnetoresistance in magnetic tunnel junctions with a single magnetic…
A comprehensive theoretical investigation on the field-driven reorientation transitions in uniaxial multilayers with antiferromagnetic coupling is presented. It is based on a complete survey of the one-dimensional solutions for the basic…
Transition metal oxide hetero-structure has great potential for multifunctional devices. However, the degraded physical properties at interface, known as dead-layer behavior, present a main obstacle for device applications. Here we present…
A theory of transport in the quantum Hall regime is developed for separately contacted double-layer electron systems. Inter-layer tunneling provides a channel for equilibration of the distribution functions in the two layers at the edge…
Strongly nonlinear transport through Diluted Magnetic Semiconductor multiquantum wells occurs due to the interplay between confinement, Coulomb and exchange interaction. Nonlinear effects include the appearance of spin polarized stationary…
Functional oxides based resistive memories are recognized as potential candidate for the next-generation high density data storage and neuromorphic applications. Fundamental understanding of the compositional changes in the functional…
Competing interactions in low-dimensional materials can produce nearly degenerate electronic and structural phases. We investigate the staircase of structural phase transitions in layered IrTe$_2$ for which a number of potential transition…
Many chalcogenide glasses undergo a breakdown in electronic resistance above a critical field strength. Known as threshold switching, this mechanism enables field-induced crystallization in emerging phase-change memory. Purely electronic as…
During the study of resistive switching devices, researchers have found that the influence of the insertion layer cannot be ignored. Many reports have confirmed that the appropriate insertion layer can significantly improve the performance…