相关论文: Layer-by-layer resistive switching: multi-state fu…
We show that resonant tunneling of electromagnetic fields can occur through a three-layer structure composed of a single-negative (i.e., either negative-permittivity or negative-permeability) slab paired with bi-layer made of…
As the Si-based transistors scale down to atomic dimensions, the basic principle of current electronics, which heavily relies on the tunable charge degree of freedom, faces increasing challenges to meet the future requirements of speed,…
We proposed a novel and simple multilayer structure to realize the deterministic switching of perpendicularly magnetized layers (Co in our work) by spin orbital torque from the spin Hall Effect in this paper. A pinned layer is introduced,…
Voltage-controlled resistive switching is demonstrated in various gap systems on SiO2 substrate. The nanosized gaps are made by different means using different materials including metal, semiconductor, and metallic nonmetal. The switching…
Building on a recently introduced model for non-volatile resistive switching, we propose a mechanism for unipolar resistance switching in metal-insulator-metal sandwich structures. The commutation from the high to low resistance state and…
The resistivity $\rho_{dc}$ of manganites is studied using a random-resistor-network, based on phase-separation between metallic and insulating domains. When percolation occurs, both as chemical composition and temperature vary, results in…
Current-induced switching from metallic to insulating state is observed in phase-separated states of (La_{1-y}Pr_y)_{0.7}Ca_{0.3}MnO_3 (y=0.7) and Nd_{0.5}Ca_{0.5}Mn_{1-z}Cr_zO_3 (z=0.03) crystals. Application of magnetic fields to this…
In this paper, the resistive switching and neuromorphic behavior of memristive devices based on parylene, a polymer both low-cost and safe for the human body, is comprehensively studied. The Metal/Parylene/ITO sandwich structures were…
Passing current at given threshold voltages through a metal/insulator/metal sandwich structure device may change its resistive state. Such resistive switching is unique to nanoscale devices, but its underlying physical mechanism remains…
We propose a magnetization reversal model to explain the perpendicular switching of a single ferromagnetic layer induced by an in-plane current. Contrary to previously proposed reversal mechanisms that such magnetic switching is directly…
Resistive-switching -- the current-/voltage-induced electrical resistance change -- is at the core of memristive devices, which play an essential role in the emerging field of neuromorphic computing. This study is about resistive switching…
The increasing demand for high-density data storage leads to an increasing interest in novel memory concepts with high scalability and the opportunity of storing multiple bits in one cell. A promising candidate is the redox-based resistive…
Perovskite transition-metal oxides are networks of corner-sharing octahedra whose tilts and distortions are known to affect their electronic and magnetic properties. We report calculations on a model interfacial structure to avoid chemical…
The switching of electric polarization induced by electric fields -a fundamental functionality of ferroelectrics- is closely associated with the motions of the domain walls that separate regions with distinct polarization directions.…
We have investigated direct and pulsed current induced electroresistance in two manganites with different electronic and magnetic ground states: charge-orbital ordered 50 % Ca doped NdMnO3 and 50 % Mn doped LaNiO3. It has been shown that…
The magnetoresistance (MR) of a material is typically insensitive to reversing the applied field direction and varies quadratically with magnetic field in the low-field limit. Quantum effects [1], unusual topological band structures [2],…
Resistive switching is the fundamental process that triggers the sudden change of the electrical properties in solid-state devices under the action of intense electric fields. Despite its relevance for information processing, ultrafast…
A multilayer perovskite thin film resistive memory device has been developed comprised of: a Pr0.7Ca0.3MnO3 (PCMO) perovskite oxide epitaxial layer on a YBCO bottom thin film electrode; a thin yttria stabilized zirconia (YSZ) buffer layer…
We demonstrate that the physical mechanism behind electroresistive switching in oxide Schottky systems is electroformation, as in insulating oxides. Negative resistance shown by the hysteretic current-voltage curves proves that impact…
The effect of resistive switching in doped manganites being in the ferromagnetic state has been studied using resistive and magneto-optic methods. The visualization of magnetic structure of La0.75Sr0.25MnO3-x single crystals, and its…