相关论文: Quantum dots formed in three-dimensional Dirac sem…

We demonstrate a controllable p$-$n junction in a three$-$dimensional Dirac semimetal (DSM) Cd$_3$As$_2$ nanowire with two recessed bottom gates. The device exhibits four different conductance regimes with gate voltages, the unipolar (n$-$n…

We study the Quantum Electrodynamics of 2D and 3D Dirac semimetals by means of a self-consistent resolution of the Schwinger-Dyson equations, aiming to obtain the respective phase diagrams in terms of the relative strength of the Coulomb…

We have measured the differential conductance of a parallel carbon nanotube (CNT) double quantum dot (DQD) with strong inter-dot capacitance and inter-dot tunnel coupling. Nominally, the device consists of a single CNT with two contacts.…

We present a comprehensive electrical characterization of an InAs/InP nanowire heterostructure, comprising two InP barriers forming a quantum dot (QD), two adjacent lead segments (LSs) and two metallic contacts, and demonstrate how to…

Two-dimensional layered materials, such as transition metal dichalcogenides (TMDCs), are promising materials for future electronics owing to their unique electronic properties. With the presence of a band gap, atomically thin gate defined…

The non-trivial topology of the three-dimensional (3D) topological insulator (TI) dictates the appearance of gapless Dirac surface states. Intriguingly, when a 3D TI is made into a nanowire, a gap opens at the Dirac point due to the quantum…

Systems of quantum dots (QD) connected to leads exhibit periodic conductance peaks as a function of gate voltage arising from the Coulomb blockade effect \cite{review1,review2,review3}. Much effort goes into minimizing the size of QDs and…

We realize a superconductor-coupled quantum dot (QD) in an InSb nanosheet, a 2D platform promising for studies of topological superconductivity. The device consists of a superconductor-QD-superconductor junction, where a bottom bilayer gate…

The material termed three-dimensional (3D) Dirac semimetal has attracted great interests recently, since it is an electronic analogue to two-dimensional graphene. Starting from this novel phase, various topologically distinct phases may be…

Based on the first-principles calculations, we recover the silent topological nature of Cd3As2, a well known semiconductor with high carrier mobility. We find that it is a symmetry-protected topological semimetal with a single pair of…

We present a three-dimensional simulation study of silicon nanowire double quantum dots (DQDs) with leads at T = 2 K, which extends beyond traditional effective mass or quasi-1D and quasi-2D approaches typically applied to bulk or planar…

In this report, we propose a new concept of one-dimensional (1D) closed lines of Dirac magnon nodes in two-dimensional (2D) momentum space of quasi-2D quantum magnetic systems. They are termed "2D Dirac magnon nodal-line loops". We utilize…

Achieving stable, high-quality quantum dots has proven challenging within device architectures rooted in conventional solid-state device fabrication paradigms. In fact, these are grappled with complex protocols in order to balance ease of…

Three dimensional Dirac semimetals are stable against weak potential disorder, but not against strong disorder. In the language of renormalization group, such stability stems from the irrelevance of weak disorder in the vicinity of the…

We investigate the strong-coupling phases that may arise in 3D Dirac and Weyl semimetals under the effect of the long-range Coulomb interaction, considering the many-body theory of these electron systems as a variant of the conventional…

Lately, the three-dimensional (3D) Dirac semimetal, which possesses 3D linear dispersion in electronic structure as a bulk analogue of graphene, has generated widespread interests in both material science and condensed matter physics. Very…

In recent years, two-dimensional Dirac materials patterned with a superlattice structure have emerged as a rich platform for exploring correlated and topological quantum matter. In this work, we propose that by subjecting Dirac electrons to…

Double quantum dots (DQDs) hold great promise as building blocks for quantum technology as they allow for two electronic states to coherently couple. Defining QDs with materials rather than using electrostatic gating allows for QDs with a…

We report on transport characteristics of quantum dot devices etched entirely in graphene. At large sizes, they behave as conventional single-electron transistors, exhibiting periodic Coulomb blockade peaks. For quantum dots smaller than…

We have fabricated superconductor-quantum dot-superconductor (SC-QD-SC) junctions by using SC aluminum electrodes with narrow gaps laterally contacting a single self-assembled InAs QD. The fabricated junctions exhibited clear Coulomb…