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相关论文: Exploring the Influence of Dynamic Disorder on Tra…

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We report the investigation of conductance fluctuation and shot noise in disordered graphene systems with two kinds of disorder, Anderson type impurities and random dopants. To avoid the brute-force calculation which is time consuming and…

介观与纳米尺度物理 · 物理学 2015-06-16 Jia Ning Zhuang , Jian Wang

Transport measurements have revealed several exotic electronic properties of graphene. The possibility to influence the electronic structure and hence control the conductivity by adsorption or doping with adatoms is crucial in view of…

Solid-state ionic conduction is a key enabler of electrochemical energy storage and conversion. The mechanistic connections between material processing, defect chemistry, transport dynamics, and practical performance are of considerable…

材料科学 · 物理学 2022-08-04 Andrey D. Poletayev , James A. Dawson , M. Saiful Islam , Aaron M. Lindenberg

We employ a dual-gated geometry to control the band gap \Delta in bilayer graphene and study the temperature dependence of the resistance at the charge neutrality point, RNP(T), from 220 to 1.5 K. Above 5 K, RNP(T) is dominated by two…

介观与纳米尺度物理 · 物理学 2015-05-19 K. Zou , J. Zhu

Nanostructuring of graphene is in part motivated by the requirement to open a gap in the electronic band structure. In particular, a periodically perforated graphene sheet in the form of an antidot lattice may have such a gap. Such systems…

介观与纳米尺度物理 · 物理学 2014-09-09 Stephen R. Power , Antti-Pekka Jauho

Physics based numerical simulation has been carried out to probe the sub-gap density of states (DOS) and underlying electron transport properties of amorphous oxide based thin film transistors (TFTs). The DOS model of TFTs consists of…

应用物理 · 物理学 2024-02-15 D. Saha , Sachin Kulkarni

We investigate the different transport mechanisms that can occur in pn junction devices made using atomic precision advanced manufacturing (APAM) at temperatures ranging from cryogenic to room temperature. We first elucidate the potential…

介观与纳米尺度物理 · 物理学 2025-03-18 Juan P. Mendez , Xujiao Gao , Jeffrey Ivie , James H. G. Owen , Wiley P. Kirk , John N. Randall , Shashank Misra

W. Chr. Germs, K. Guo, R. A. J. Janssen, and M. Kemerink [1] recently measured the temperature and concentration dependent seebeck coefficient in organic thin film transistor and found the seebeck coefficient increases with carrier…

无序系统与神经网络 · 物理学 2012-12-04 Ling Li , Nianduan Lu , Ming Liu

Interfaces play a crucial role in energy transport at the nanoscale. However, direct experimental observations of interfacial thermal conductance across molecular junctions have remained challenging due to the high spatiotemporal resolution…

化学物理 · 物理学 2025-12-23 Md. Shahriar Hossain Shuvo , Xing He , Mithun Ghosh , Ding-Shyue Yang

By using the self-consistent Born approximation, we investigate disorder effect induced by the short-range impurities on the band-gap in two-dimensional Dirac systems with the higher order terms in momentum. Starting from the…

介观与纳米尺度物理 · 物理学 2020-05-29 Sergey S. Krishtopenko , Mauro Antezza , Frédéric Teppe

The role of defect-induced zero-energy modes on charge transport in graphene is investigated using Kubo and Landauer transport calculations. By tuning the density of random distributions of monovacancies either equally populating the two…

介观与纳米尺度物理 · 物理学 2013-05-13 Alessandro Cresti , Frank Ortmann , Thibaud Louvet , Dinh Van Tuan , Stephan Roche

We study the contribution of advection by thermal velocity fluctuations to the effective diffusion coefficient in a mixture of two identical fluids. The steady-state diffusive flux in a finite system subject to a concentration gradient is…

介观与纳米尺度物理 · 物理学 2015-05-27 A. Donev , A. de la Fuente , J. B. Bell , A. L. Garcia

We present transport, Hall effect, electronic tunnelling and penetration depth studies in 3D homogeneously disordered epitaxial NbN thin films with disorder ranging from the moderately clean limit (k_Fl~10.12) to the very dirty limit…

We investigate the electron transport through a graphene p-n junction under a perpendicular magnetic field. By using Landauar-Buttiker formalism combining with the non-equilibrium Green function method, the conductance is studied for the…

介观与纳米尺度物理 · 物理学 2009-11-13 Wen Long , Qing-feng Sun , Jian Wang

We evaluate the degree of disorder in electrolyte gating devices through the transport measurements in graphene. By comparing the mobility in ion- and standard metal-gated devices, we show that the deposition of the ionic liquid introduces…

介观与纳米尺度物理 · 物理学 2016-06-22 Andrew Browning , Norio Kumada , Yoshiaki Sekine , Hiroshi Irie , Koji Muraki , Hideki Yamamoto

Contrary to most materials, graphene exhibits a negative thermal expansion coefficient (TEC), i.e it contracts when heated. This contraction is due to the thermal excitation of low energy out-of-plane vibration modes. These flexural modes…

By a combined experimental and theoretical approach, we investigate normal state thermoelectric transport in MgB2, as a probe of selective disorder and doping in the sigma and pi bands. We calculate the temperature dependent diffusive…

超导电性 · 物理学 2023-05-01 Ilaria Pallecchi , Marco Monni , Pietro Manfrinetti , Marina Putti

We report on magneto-transport measurement in disordered graphene under pulsed magnetic field of up to 57T. For large electron or hole doping, the system displays the expected anomalous Integer Quantum Hall Effect (IQHE) specific to…

介观与纳米尺度物理 · 物理学 2015-05-18 J. M. Poumirol , W. Escoffier , A. Kumar , M. Goiran , B. Raquet , J. M. Broto

Using atomistic quantum simulation based on a tight binding model, we investigate the formation of energy gap Eg of graphene nanomesh (GNM) lattices and the transport characteristics of GNM-based electronic devices (single potential barrier…

介观与纳米尺度物理 · 物理学 2013-06-11 Viet Hung Nguyen , Mai Chung Nguyen , Huy Viet Nguyen , Philippe Dollfus

The recently proposed density functional theory for steady-state transport (i-DFT) is extended to include temperature gradients between the leads. Within this framework, a general and exact expression is derived for the linear Seebeck…

强关联电子 · 物理学 2019-12-04 Nahual Sobrino , Roberto D'Agosta , Stefan Kurth