相关论文: Circular photogalvanic effect in Cu/Bi bilayers
The circular photogalvanic effect (CPGE) has been observed in (100)-oriented $p$-GaAs/AlGaAs quantum wells at normal incidence of far-infrared radiation. It is shown that monopolar optical spin orientation of free carriers causes an…
We report on the observation of symmetry breaking and the circular photogalvanic effect in Cd$_x$Hg$_{1-x}$Te alloys. We demonstrate that irradiation of bulk epitaxial films with circularly polarized terahertz radiation leads to the…
We develop a general theory of the layer circular photogalvanic effect (LCPGE) in quasi two-dimensional chiral bilayers, which refers to the appearance of a polarization-dependent, out-of-plane dipole moment induced by circularly polarized…
Circularly polarized photons are known to generate a directional helicity-dependent photocurrent in three-dimensional topological insulators at room temperature. Surprisingly, the phenomenon is readily observed at photon energies that…
Photogalvanic effect (PGE) occurs in materials with non-centrosymmetric structures when irradiated by linearly or circularly polarized light. Here, using non-equilibrium Green's function combined with density functional theory (NEGF-DFT),…
We observed a circular photogalvanic effect (CPGE) in GaAs quantum wells at inter-band excitation. The spectral dependence of the CPGE is measured together with that of the polarization degree of the time resolved photoluminescence. A…
The circular photogalvanic effect (CPGE) is the photocurrent generated in an optically active material in response to an applied ac electric field, and it changes sign depending on the chirality of the incident circularly polarized light.…
A detailed study of the circular photogalvanic effect (CPGE) in SiGe structures is presented. It is shown that the CPGE becomes possible due to the built-in asymmetry of quantum wells (QWs) in compositionally stepped samples and in…
We investigate the circular photogalvanic effect (CPGE) in single-crystalline methylammonium lead iodide microcrystals under a static electric field. The external electric field can enhance the magnitude of the helicity dependent…
The chiral photocurrent or circular photogalvanic effect (CPGE) is a photocurrent that depends on the sense of circular polarization. In a disorder-free, noninteracting chiral Weyl semimetal, the magnitude of the effect is approximately…
One of the hallmarks of light-spin interaction in solids is the appearance of photocurrent that depends on the light helicity. Recent studies have shown that helicity dependent photocurrent (HDP) emerges due to light induced spin current…
The absence of mirror symmetry, or chirality, is behind striking natural phenomena found in systems as diverse as DNA and crystalline solids. A remarkable example occurs when chiral semimetals with topologically protected band degeneracies…
Utilizing spin or valley degree of freedom is one of the promising approaches to realize more energy-efficient information processing. In the 2D transition metal dichalcogenide, the spin/valley current can be generated by utilizing the…
Thanks to the strong spin-orbit interaction (SOI), HgTe-based quantum wells (QWs) exhibit very rich spin-related properties. But the full descriptions of them are beyond the simple parabolic band models and conventional Rashba and…
We report the detection of zero-bias photocurrents induced by interband excitation using oblique near-infrared light ({\lambda}=0.780 {\mu}m) along the directions parallel and perpendicular to the helical axis in a millimeter-sized Te…
Recently, helicity-dependent photocurrent was reported in Bi single thin fi lms. It is proposed that the origin of this photocurrent is the combination of photo-spin conversion and spin-charge conversion effects in Bi and efficient spin…
Dirac semimetals are expected to forbid the manifestation of the circular photogalvanic effect (CPGE) because of their crystal inversion symmetry. Here, we report the observation of the CPGE in Cd3As2 nanobelt field effect transistors, when…
We report on the circular and linear photogalvanic effects caused by free-carrier absorption of terahertz radiation in electron channels on (001)-oriented and miscut silicon surfaces. The photocurrent behavior upon variation of the…
An appearance of a direct current perpendicularly to a constant component of an electric field in material with Rashba Hamiltonian under the influence of an elliptically polarized wave is investigated in one-subband approximation. On its…
The circular photogalvanic effect (CPGE), induced by infrared radiation, has been observed in (0001)-oriented GaN quantum well (QW) structures. The photocurrent changes sign upon reversing the radiation helicity demonstrating the existence…