相关论文: Proton Irradiation Induced Defects in \b{eta}-Ga2O…

A combined experimental/theoretical study of the EPR in irradiated $\beta$-Ga$_2$O$_3$ is presented. Four EPR spectra, two $S=1/2$ and two $S=1$, are observed after high-energy proton or electron irradiation. One of the S=1/2 spectra (EPR1)…

Ion irradiation is a powerful tool to tune properties of semiconductors and, in particular, of gallium oxide (Ga2O3) which is a promising ultra-wide bandgap semiconductor exhibiting phase instability for high enough strain/disorder levels.…

In the present Ph.D. Thesis we report an experimental investigation on the effects of gamma- and beta-ray irradiation and of subsequent thermal treatment on many types of a-SiO2 materials, differing in the production methods, OH- and…

A computational study of the Electron Paramagnetic Resonance (EPR) $g$-tensors and hyperfine tensors of Li and Ga vacancies in LiGaO$_2$ is presented. Density Functinal Theory (DFT) calculations are carried out of the Ga and Li vacancies…

Monolayer graphene grown by chemical vapor deposition and transferred to SiO_2 is used to introduce vacancies by Ar^+ ion bombardment at a kinetic energy of 50 eV. The density of defects visible in scanning tunneling microscopy (STM) is…

We use first-principles calculations based on many-body perturbation theory to investigate the near-edge electronic and optical properties of \b{eta}-Ga2O3. The fundamental band gap is indirect, but the minimum direct gap is only 29 meV…

We report an experimental study by electron paramagnetic resonance (EPR) of gamma ray irradiation induced point defects in oxygen deficient amorphous SiO2 materials. We have found that three intrinsic (E'gamma, E'delta and triplet) and one…

Understanding and manipulating spin polarization and transport in the vicinity of semiconductor-hosted defects is a problem of present technological and fundamental importance. Here, we use high-field magnetic resonance to monitor the…

Ultrawide bandgap semiconductor $\beta$-Ga2O3 holds extensive potential for applications in high-radiation environments. One of the primary challenges in its practical application is unveiling the mechanisms of surface irradiation damage…

Metastable photoinduced Electron Paramagnetic Resonance (EPR) signal at low temperatures is reported in GaN alloyed with boron ($B_{x}Ga_{1-x}N$) epitaxial layers grown at temperatures ranging from 840 {\deg}C to 1090 {\deg}C. An isotropic…

Optically addressable spin defects in wide-bandage semiconductors as promising systems for quantum information and sensing applications have attracted more and more attention recently. Spin defects in two-dimensional materials are supposed…

The dependence on Q^2 (the negative square of the 4-momentum of the exchanged virtual photon) of the generalised Gerasimov-Drell-Hearn integral for the proton has been measured in the range 1.2 GeV^2 < Q^2 < 12 GeV^2 by scattering…

New high-precision total and differential cross sections for $\eta$ and $\eta'$ photoproduction on the proton obtained by the A2 Collaboration at the Mainz Microtron are presented. The data for $\eta$ photoproduction demonstrate a cusp at…

A recent muon spin rotation ($\mu^+$SR) study on a paramagnetic defect complex formed upon implantation of $\mu^+$ pseudo-proton into SrTiO$_3$ is reviewed with a specific focus on the relation with experimental signatures of coexisting…

The virtual photon absorption cross section differences [sigma_1/2-sigma_3/2] for the proton and neutron have been determined from measurements of polarised cross section asymmetries in deep inelastic scattering of 27.5 GeV longitudinally…

Hexagonal boron nitride (hBN) is a wide band gap, van der Waals material that is highly promising for solid-state quantum technologies as a host of optically addressable, paramagnetic spin defects. Intrinsic and extrinsic point defects…

The utility of prompt photon plus associated jet production for constraining the size and shape of the polarized gluon density of the proton $\Delta G$ is examined at $\sqrt{S}=40$ GeV, appropriate for the proposed HERA-$\vec{N}$ polarized…

Various defects in ZnO, focused on substitutional N$_O$ and N$_2$ in various sites, O-site, interstitial and Zn-site are studied using first-principles calculations with the goal of understanding the electron paramagnetic resonance (EPR)…

The spin structure functions g_1 for the proton and the deuteron have been measured over a wide kinematic range in x and Q2 using 1.6 and 5.7 GeV longitudinally polarized electrons incident upon polarized NH_3 and ND_3 targets at Jefferson…

The radiation damage in 200 um thick Schottky diodes made on semi-insulating (SI) undoped GaAs Liquid Encapsulated Czochralski (LEC) bulk material with resistivities between 0.4 and 8.9*10E7 Ohm*cm were studied using alpha-spectroscopy,…