相关论文: Interface spin polarization of the Heusler compoun…
Based on first principles density functional calculations of the intrinsic anomalous and spin Hall conductivities, we predict that the charge Hall current in Co-based full Heusler compounds Co$_2$XZ (X = Cr and Mn; Z = Al, Si, Ga, Ge, In…
Magnetic and electronic transport properties of Co$_2$MnZ (Z = Al, Ga, Ge, Si, Sn) Heusler alloys were experimentally investigated. Electrical resistivity, in the temperature range from 4.2 to 300 K, as well as field dependences of the Hall…
Half-Heusler compounds with 18 valence electrons per unit cell are well-known non-magnetic semiconductors. Employing first-principles electronic band structure calculations, we study the interface properties of the half-Heusler…
Engineering of magnetic materials for developing better spintronic applications relies on the control of two key parameters: the spin polarization and the Gilbert damping responsible for the spin angular momentum dissipation. Both of them…
Our Introduction starts with a short general review of the magnetic and structural properties of the Heusler compounds which are under discussion in this book. Then, more specifically, we come to the discussion of our experimental results…
Half-metallic Heusler alloy compounds with Curie temperatures above room temperature are suitable candidate electrode materials for injecting large spin-polarised charge carriers into the semiconducting barriers at the ferromagnet…
Magnetoresistive effects are usually invariant upon inversion of the magnetization direction. In noncentrosymmetric conductors, however, nonlinear resistive terms can give rise to a current dependence that is quadratic in the applied…
The occurrence of inhomogeneous spin-density distribution in multilayered ferromagnetic diluted magnetic semiconductor nanostructures leads to strong dependence of the spin-polarized transport properties on these systems. The spin-dependent…
The spin Hall magnetoresistance (SMR) allows to investigate the magnetic textures of magnetically ordered insulators in heterostructures with normal metals by magnetotransport experiments. We here report the observation of the SMR in…
Noncollinear metallic antiferromagnets, with their rapid spin dynamics, efficient spin transport, and distinctive spin textures, play a pivotal role in advancing the field of spintronics. In this study, we report a comprehensive…
The large spin orbit coupling in topological insulators results in helical spin-textured Dirac surface states that are attractive for topological spintronics. These states generate an efficient spin-orbit torque on proximal magnetic moments…
A computational study of the epitaxial Co2MnSi(001)/MgO(001) interface relevant to tunneling magnetoresistive (TMR) devices is presented. Employing ab initio atomistic thermodynamics, we show that the Co- or MnSi-planes of bulk-terminated…
In this paper, we investigated the Co2TiX (X = Ge, Sn) Heusler alloys by structural, magnetic and spin polarization measurements to probe the half-metallic nature. Alloys are synthesized using the arc melting technique, and found to exist…
We present the rational design scheme intended to provide the stable high spin-polarization at the interfaces of the magneto-resistive junctions by fulfilling the criteria of structural and chemical compatibilities at the interface. This…
We report the current-perpendicular-to-plane giant magnetoresistance of a spin valve with Co2MnSi (CMS) Heusler alloy ferromagnetic electrodes. A multilayer stack of Cr/Ag/Cr/CMS/Cu/CMS/Fe25Co75/Ir28Mn72/Ru was deposited on a MgO (001)…
This work reports on the band structure and magneto-transport investigations of the inverse Heusler compound Fe2CoSi. The first-principles calculations reveal that Fe2CoSi has a very peculiar band structure with a conducting property in the…
Weyl semimetals are playing a major role in condensed matter physics due to exotic topological properties, and their coexistence with ferromagnetism may lead to enhanced spin-related phenomena. Here, the inverse spin Hall effect (ISHE) in…
Spin-dependent transport was investigated in a spin metal-oxide-semiconductor field-effect transistors (spin MOSFET) with ferromagnetic MnAs source and drain (S/D) contacts. The spin MOSFET of bottom-gate type was fabricated by…
Spin-dependent transport phenomena due to relativistic spin-orbit coupling and broken space-inversion symmetry are often difficult to interpret microscopically, in particular when occurring at surfaces or interfaces. Here we present a…
Parameters of the energy gap and, consequently, electronic, magnetic and galvanomagnetic properties in different X$_2$YZ Heusler alloys can vary quite strongly. In particular, half-metallic ferromagnets (HMFs) and spin gapless…