相关论文: Topological surface states in thick partially rela…
A topological insulator (TI), a new quantum state featured with the topologically-protected surface state (TSS) originating from its peculiar topology in band structure, has attracted much interest due to academic and practical importance.…
Tensile strained bulk HgTe is a three-dimensional topological insulator. Because of the energetic position of its surface state Dirac points relative to its small bulk gap, the electronic properties of the relatively thin MBE-grown films…
We report on systematic study of transport properties of a 1000-nm HgTe film. Unlike to thinner and strained HgTe films, which are known as high-quality three-dimensional (3D) topological insulators, the film under study is much thicker…
We investigated the magnetotransport properties of strained, 80nm thick HgTe layers featuring a high mobility of mu =4x10^5 cm^2/Vs. By means of a top gate the Fermi-energy is tuned from the valence band through the Dirac type surface…
The surface states of a 3D topological insulator (TI) exhibit topological protection against backscattering. However, the contribution of bulk electrons to the transport data is an impediment to the topological protection of surface. We…
Topological insulators (TIs) are new insulating materials with exotic surface states, where the motion of charge carriers is described by the Dirac equations and their spins are locked in a perpendicular direction to their momentum. Recent…
The most interesting experimental results obtained in studies of 2D and 3D topological insulators (TIs) based on HgTe quantum wells and films are reviewed. In the case of 2D TIs, these include the observation of nonlocal ballistic and…
Topological insulators (TI), with characteristic Dirac-fermion topological surface states (TSS), have emerged as a new class of electronic materials with rich potentials for both novel physics and device applications. However, a major…
In ideal topological insulator (TI) films the bulk state, which is supposed to be insulating, should not provide any electric coupling between the two metallic surfaces. However, transport studies on existing TI films show that the…
We report thermoelectric (TE) properties of topological surface Dirac states (TSDS) in three-dimensional topological insulators (3D-TIs) purely isolated from the bulk by employing single crystal Bi$_{2-x}$Sb$_x$Te$_{3-y}$Se$_y$ films…
A key challenge in condensed matter research is the optimization of topological insulator (TI) compounds for the study and future application of their unique surface states. Truly insulating bulk states would allow the exploitation of…
Topological insulators (TI) have attracted extensive research effort due to their insulating bulk states but conducting surface states. However, investigation and understanding of thermal transport in topological insulators, particularly…
In a topological insulator (TI) the character of electron transport varies from insulating in the interior of the material to metallic near its surface. Unlike, however, ordinary metals, conducting surface states in TIs are topologically…
Topological insulator (TI) materials such as Bi2Te3 and Bi2Se3 have attracted strong recent interests. Large scale, high quality TI thin films are important for developing TI-based device applications. In this work, structural and…
Topological insulators (TIs) are intriguing materials for advanced computing applications based on spintronics because they can host robust spin effects. For instance, TIs have intrinsically large spin generation enabled by their large…
Three-dimensional (3-D) topological insulators (TI) are characterized by the presence of metallic surface states and a bulk band gap. Recently theoretical and experimental studies have shown an induced gap in the surface state bands of TI…
Bulk Bi2Te3 is known to be a topological insulator. We investigate surface states of Bi2Te3(111) thin films using density-functional theory including spin-orbit coupling. We construct a method to unambiguously identify surface states of…
The discovery of topological insulators (TIs), materials with bulk band gaps and protected cross-gap surface states, in compounds such as Bi2Se3 has generated much interest in identifying topological surface states (TSSs) in other classes…
Topological insulators represent a novel state of matter with surface charge carriers having a massless Dirac dispersion and locked helical spin polarization. Many exciting experiments have been proposed by theory, yet, their execution have…
Several small-bandgap semiconductors are now known to have protected metallic surface states as a consequence of the topology of the bulk electron wavefunctions. The known "topological insulators" with this behavior include the important…