相关论文: High-temperature Ultraviolet Photodetectors: A Rev…
In this paper, an overview of the wide bandgap (WBG) semiconductors for radiation detection applications is presented. The recent advancements in the fabrication of high-quality wafers have enabled the remarkable WBG semiconductor device…
Silicon's bandgap inherently restricts its photodetection to wavelengths below 1100 nm, necessitating the integration of costly III-V semiconductors for short-wave infrared applications. Hyperdoping silicon beyond the solid solubility limit…
The ability to perform broadband optical spectroscopy with sub-diffraction-limit resolution is highly sought-after for a wide range of critical applications. However, sophisticated tip-enhanced techniques are currently required to achieve…
In the previous studies, the ultraviolet light thermoreflectance (UV-TDTR) signal from bulk semiconducting samples cannot be well explained by a thermal models based on the assumption that the heat is both absorbed and probed near the…
Metastable silicon phases have attracted extensive attention these years, due to their fundamentally distinct photoelectric properties compared to the conventional diamond cubic (I) counterpart. Certain metastable phases, prepared via…
We propose a new scintillation-type detector in which high-energy radiation produces electron-hole pairs in a direct-gap semiconductor material that subsequently recombine producing infrared light to be registered by a photo-detector. The…
Wide bandgap semiconductors are widely used in photonic technologies due to their advantageous features, such as large optical bandgap, low losses, and fast operational speeds. Silicon carbide is a prototypical wide bandgap semiconductor…
High-temperature operation of metal-semiconductor-metal (MSM) UV photodetectors fabricated on pulsed laser deposited \b{eta}-Ga2O3 thin films has been investigated. These photodetectors were operated up to 250 {\deg}C temperature under 255…
The paper reviews recent progress in photodetectors, discussing vacuum-based detectors, semiconductor sensors, and gas-based detectors. The emphasis in this review is on the detection of low light levels, enhanced timing resolution, and…
Wide band gap semiconductors are essential for today's electronic devices and energy applications due to their high optical transparency, as well as controllable carrier concentration and electrical conductivity. There are many categories…
Optoelectronic functionalities of photodection and light harnessing rely on the band-to-band excitation of semiconductors, thus the spectral response of the devices is dictated and limited by their bandgap. A novel approach, free from this…
Photodetectors are key optoelectronic building blocks performing the essential optical-to-electrical signal conversion, and unlike solar cells, operate at a specific wavelength and at high signal or sensory speeds. Towards achieving high…
There are several applications which require high position resolution UV imaging. For these applications we have developed and successfully tested a new version of a 2D UV single photon imaging detector based on a microgap RPC. The main…
Hyperspectroscopy is a new method of surface image taking, providing simultaneously high position and spectral resolutions which allow one to make some conclusions about chemical compositions of the surfaces. We are now studying…
A high-performance fast response deep ultraviolet (UV) photodetectors with interdigitated Ti/Au planar electrodes using a lithography technology has fabricated on homoepitaxial diamond. The device shows a high ultraviolet photocurrent at…
Photoconductive devices based on ultra-wide-bandgap (UWBG) materials offer a promising pathway toward compact, high-voltage (HV) optoelectronic and optical sensing in harsh environments. In this Letter, we report field-tunable nonlinear…
We theoretically demonstrate negative refraction and sub-wavelength resolution below the diffraction limit in the UV and extreme UV ranges using semiconductors. The metal-like re-sponse of typical semiconductors such as GaAs or GaP makes it…
Photodetectors with broadband optical response have promising applications in many advanced optoelectronic and photonic devices. Especially, those with the detection range up to mid-infrared at room temperature are very challenging and…
Group III-V semiconductor materials are being considered as a Si replacement for advanced logic devices for quite some time. Advances in III-V processing technologies, such as interface and surface passivation, large area deep submicron…
We have developed commercial prototypes of sealed gaseous detectors combined with CsI photocathodes and/or filled with photosensitive vapors. The rirst results of application of these devices for the detection of flames in daylight…