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A thorough understanding of the microscopic picture of heat conduction in solids is critical to a broad range of applications, from thermal management of microelectronics to more efficient thermoelectric materials. The transport properties…

材料科学 · 物理学 2021-02-04 Yujie Quan , Shengying Yue , Bolin Liao

We calculate the electron-phonon scattering and binding in semiconducting carbon nanotubes, within a tight binding model. The mobility is derived using a multi-band Boltzmann treatment. At high fields, the dominant scattering is inter-band…

材料科学 · 物理学 2009-11-10 Vasili Perebeinos , J. Tersoff , Phaedon Avouris

Different scattering mechanisms in graphene are explored and conductivity is calculated within the Boltzmann transport theory. We provide results for short-range scattering using the Random Phase Approximation for electron screening, as…

介观与纳米尺度物理 · 物理学 2008-03-15 Shaffique Adam , E. H. Hwang , S. Das Sarma

We compute the thermal conductivity of monolayer beryllene using the linearized phonon Boltzmann transport equation with interatomic force constants obtained from \textit{ab-initio} calculations. Monolayer beryllene exhibits an impressive…

材料科学 · 物理学 2024-09-10 Sapta Sindhu Paul Chowdhury , Santosh Mogurampelly

We investigated a suspended bilayer graphene where the bottom (top) layer is doped by boron (nitrogen) substitutional atoms by using Density Functional Theory (DFT) calculations. We found that at high dopant concentration (one B-N pair…

材料科学 · 物理学 2016-05-25 Daniele Giofré , Davide Ceresoli , Mario I. Trioni

A class of integrable models, such as the one-dimensional transverse-field Ising model, respond nonmonotonically to a periodic drive with respect to the driving parameters and freezes almost absolutely for certain combinations of the…

强关联电子 · 物理学 2023-07-14 Soumya Sasidharan , Naveen Surendran

Graphene is a two-dimensional (2D) semimetal with high mobility in charge carriers due to the existence of Dirac points. Silicene is another promising material, with properties analog to graphene. Many silicon (Si) based electronic devices…

材料科学 · 物理学 2021-09-07 K M Abeywickrama , P K D D P Pitigala , W W P De Silva

For several years the electronic structure properties of the novel two-dimensional system silicene have been studied extensively. Electron transport across metal-silicence junctions, however, remains relatively unexplored. To address this…

材料科学 · 物理学 2015-04-15 Yun-Peng Wang , J. N. Fry , Hai-Ping Cheng

The existence of strong trigonal warping around the K point for the low energy electronic states in multilayer (N$\geq$2) graphene films and graphite is well established. It is responsible for phenomena such as Lifshitz transitions and…

Recent measurements in several different laboratories report the observation of an approximately linear-in-temperature resistivity with a large twist-angle-dependent slope (or temperature coefficient) in moir\'e twisted bilayer graphene…

介观与纳米尺度物理 · 物理学 2022-07-21 Sankar Das Sarma , Fengcheng Wu

Experimental realization of two-dimensional boron sheets was reported very recently by Feng et. al. using molecular beam epitaxy on silver (111) surface. These boron sheets possess promising electronic and transport properties. We performed…

介观与纳米尺度物理 · 物理学 2018-10-17 Vivekanand Shukla , Anton Grigoriev , Naresh K. Jena , Rajeev Ahuja

We theoretically study the thermoelectric transport S in a double-layer bilayer graphene (BLG-GaAs-BLG) system on dielectric substrates (h-BN, Al2O3, HfO2). Electrons interact with GaAs acoustic phonons via both the deformation potential…

介观与纳米尺度物理 · 物理学 2025-08-06 Vo Van Tai , Truong Van Tuan , Tran Trong Tai , Le Tri Dat , Nguyen Duy Vy

We analyze the transport properties of a semiconductor based bilayer system under non-equilibrium conditions with special emphasis on the charge transfer statistics in the regime dominated by the exciton transport. We consider two different…

介观与纳米尺度物理 · 物理学 2013-08-06 H. Soller , A. Komnik

Electrons in monolayer graphene in the presence of an electromagnetic (or electric) wave are considered theoretically. It is shown that the electron motion is a nonlinear combination of Zitterbewegung (ZB, trembling motion) resulting from…

介观与纳米尺度物理 · 物理学 2013-12-11 Tomasz M Rusin , Wlodek Zawadzki

In this paper the effect of biaxial and uniaxial strain on the mobility of single-layer MoS$_{2}$ for temperatures T $>$ 100 K is investigated. Scattering from intrinsic phonon modes, remote phonon and charged impurities are considered…

介观与纳米尺度物理 · 物理学 2015-09-30 Manouchehr Hosseini , Mohammad Elahi , Mahdi Pourfath , David Esseni

We theoretically study the transport properties of both monolayer and bilayer graphene in the presence of electron-hole puddles induced by charged impurities which are invariably present in the graphene environment. We calculate the…

介观与纳米尺度物理 · 物理学 2011-09-28 Qiuzi Li , E. H. Hwang , S. Das Sarma

We calculate the thermal conductivity of free-standing silicene using the phonon Boltzmann transport equation within the relaxation time approximation. In this calculation, we investigate the effects of sample size and different scattering…

介观与纳米尺度物理 · 物理学 2018-04-18 M. Barati , T. Vazifehshenas , T. Salavati-fard , M. Farmanbar

We have performed a comprehensive computational study of the vibrational properties and electron-phonon couplings in the three known polymorphs of pentacene. Vibrational patterns and electron-phonon interactions were calculated at several…

材料科学 · 物理学 2025-07-08 Luca Gnoli , Elisabetta Venuti , Matteo Masino , Patrizio Graziosi

Quantum-confined semiconductor structures are the cornerstone of modern-day electronics. Spatial confinement in these structures leads to formation of discrete low-dimensional subbands. At room temperature, carriers transfer among different…

介观与纳米尺度物理 · 物理学 2009-08-14 I. Knezevic , E. B. Ramayya , D. Vasileska , S. M. Goodnick

Fundamentally understanding lattice dynamics and thermal transport behavior in liquid-like, partially occupied compounds remains a long-standing challenge in condensed matter physics. Here, we investigate the microscopic mechanisms…