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The recently discovered topological insulators exhibit topologically protected metallic surface states which are interesting from the fundamental point of view and could be useful for various applications if an appropriate electronic gating…

介观与纳米尺度物理 · 物理学 2011-02-15 A. A. Kordyuk , T. K. Kim , V. B. Zabolotnyy , D. V. Evtushinsky , M. Bauch , C. Hess , B. Buechner , H. Berger , S. V. Borisenko

Two-dimensional (2D) topological insulators (TIs) are promising platforms for low-dissipation spintronic devices based on the quantum spin Hall (QSH) effect, but experimental realization of such systems with a large band gap suitable for…

介观与纳米尺度物理 · 物理学 2018-05-23 P. Chen , W. -W. Pai , Y. -H. Chan , W. -L. Sun , C. -Z. Xu , D. -S. Lin , M. Y. Chou , A. -V. Fedorov , T. -C. Chiang

We measured the response of the surface state spectrum of epitaxial Sb2Te3 thin films to applied gate electric fields by low temperature scanning tunneling microscopy. The gate dependent shift of the Fermi level and the screening effect…

介观与纳米尺度物理 · 物理学 2014-05-07 Tong Zhang , Jeonghoon Ha , Niv Levy , Young Kuk , Joseph Stroscio

We report epitaxial growth of $\beta$-Ag2Te thin films by molecular beam epitaxy. $\beta$-Ag2Te, recently identified as a topological insulator, was grown by depositing Ag on InP substrate at room temperature followed by Te supply at…

材料科学 · 物理学 2026-03-17 Ayuki Takegawa , Kouya Imoto , Minoru Kawamura , Moeta Tsukamoto , Ryutaro Yoshimi

Twisted bilayer graphene (TBG) near "magic angles" has emerged as a rich platform for strongly correlated states of two-dimensional Dirac semimetals. Here we show that twisted bilayers of thin-film magnetic topological insulators (MTI) with…

介观与纳米尺度物理 · 物理学 2022-09-07 Gaurav Chaudhary , Anton A. Burkov , Olle G. Heinonen

Optical band gap properties of high-quality few-layer topological insulator Bi2Se3 thin films grown with magnetron sputtering are investigated using broadband absorption spectroscopy. We provide direct optical evidence of a rigid blue-shift…

材料科学 · 物理学 2017-05-24 Yub Raj Sapkota , Asma Alkabsh , Aaron Walber , Hassana Samassekou , Dipanjan Mazumdar

We demonstrate the ability to reduce the carrier concentration of thin films of the topological insulator (TI) Bi2Se3 by utilizing a novel approach, namely non-volatile electrostatic gating via corona charging of electret polymers.…

介观与纳米尺度物理 · 物理学 2018-04-11 R. M. Ireland , Liang Wu , M. Salehi , S. Oh , N. P. Armitage , H. E. Katz

Three-dimensional topological insulators (TIs) have emerged as a unique state of quantum matter and generated enormous interests in condensed matter physics. The surfaces of a three dimensional (3D) TI are composed of a massless Dirac cone,…

Recently, Bi2O2Se is discovered as a promising two-dimensional (2D) semiconductor for next generation electronics, due to its moderate bandgap size, high electron mobility and pronounced ambient stability. Meanwhile, it has been predicted…

Individual relaxation dynamics of electrons and holes in optically pumped semiconductors is rarely observed due to their overlap. Here we report the individual dynamics of long-lived (~200 mks) holes observed at room temperature in a 10 nm…

介观与纳米尺度物理 · 物理学 2022-12-06 Yuri D. Glinka , Tingchao He , Xiao Wei Sun

We present an infrared magneto-optical study of the highly thermoelectric narrow-gap semiconductor Bi$_2$Se$_3$. Far-infrared and mid-infrared (IR) reflectance and transmission measurements have been performed in magnetic fields oriented…

强关联电子 · 物理学 2010-07-05 A. D. LaForge , A. Frenzel , B. C. Pursley , Tao Lin , Xinfei Liu , Jing Shi , D. N. Basov

Spatial confinement of electronic topological surface states (TSS) in topological insulators poses a formidable challenge because TSS are protected by time-reversal symmetry. In previous works formation of a gap in the electronic spectrum…

Surface states of topological insulators (TIs) have been playing the central role in the majority of outstanding investigations in low-dimensional electron systems for more than 10 years. TIs based on high-quality strained HgTe films…

介观与纳米尺度物理 · 物理学 2019-05-15 M. L. Savchenko , D. A. Kozlov , N. N. Vasilev , Z. D. Kvon , N. N. Mikhailov , S. A. Dvoretsky , A. V. Kolesnikov

A new fabrication process is developed for growing Bi2Se3 topological insulators in the form of nanowires/nanobelts and ultra-thin films. It consists of two consecutive procedures: first Bi2Se3 nanowires/nanobelts are deposited by standard…

Transient reflectivity (TR) measured at laser photon energy 1.51 eV from the indirectly intersurface coupled topological insulator Bi2-xMnxSe3 films (12 nm thick) revealed a strong dependence of the rise-time and initial decay-time…

介观与纳米尺度物理 · 物理学 2016-04-20 Yuri D. Glinka , Sercan Babakiray , Mikel B. Holcomb , David Lederman

Since the discovery of topological insulators (TI), there are considerable interests in demonstrating metallic surface states, their shielded robust nature to the backscattering and study their properties at nanoscale dimensions by…

材料科学 · 物理学 2017-02-01 Biplab Bhattacharyya , Alka Sharma , V P S Awana , T. D. Senguttuvan , Sudhir Husale

We report on the observation of a possible topological Hall effect in thin films of the itinerant ferromagnet Eu1-xSmxTiO3. EuTiO3 and Eu0.955Sm0.045TiO3 films were grown by molecular beam epitaxy. The EuTiO3 film is insulating. The Hall…

强关联电子 · 物理学 2017-11-23 Kaveh Ahadi , Luca Galletti , Susanne Stemmer

The protected surface states of topological insulators (TIs) form gapless Dirac cones corresponding non-degenerate eigenstates with helical spin polarisation. The presence of a warping term deforms the isotropic cone of the most simple…

材料科学 · 物理学 2020-07-02 Peter Thalmeier , Alireza Akbari

Topological insulators (TIs) constitute a new class of materials with unique properties resulting from the relativistic-like character and topological protection of their surface states. Theory predicts these to exhibit a rich variety of…

介观与纳米尺度物理 · 物理学 2010-09-14 Hadar Steinberg , Dillon R. Gardner , Young S. Lee , Pablo Jarillo-Herrero

The surface electronic properties of the important topological insulator Bi2Te3 are shown to be robust under an extended surface preparation procedure which includes exposure to atmosphere and subsequent cleaning and recrystallization by an…

材料科学 · 物理学 2015-05-27 L. Plucinski , G. Mussler , J. Krumrain , S. Suga , D. Gruetzmacher , C. M. Schneider