相关论文: Optimization of Amorphous Germanium Electrical Con…

Silicon and germanium are the well-known materials used to manufacture electronic devices for the integrated circuits but they themselves are not considered as promising options for interconnecting the devices due to their semiconducting…

Hg$_{1-x}$Cd$_x$Te is a unique material with the band-gap tunable by the temperature, pressure, and cadmium content in a wide range, from 1.6 eV to inverted band-gap of -0.3 eV. This makes Hg$_{1-x}$Cd$_x$Te one of the key materials for…

The impact of Ge vacancies on the low-temperature lattice dynamics of single-crystalline GeTe was investigated through a comparative study of two off-stoichiometric samples: Ge$_{0.8}$Te (S$_1$) and Ge$_{0.88}$Te (S$_2$). X-ray diffraction…

Hydrogenated amorphous carbon (a-C:H), deposited by the rf-plasma enhanced chemical vapour deposition (rf-PECVD) technique, is a promising material for large area electronic and interlayer dielectric applications. The structural and…

Hole gases in planar germanium can have high mobilities in combination with strong spin-orbit interaction and electrically tunable g-factors, and are therefore emerging as a promising platform for creating hybrid…

We have carried out $^{125}$Te nuclear magnetic resonance (NMR) in a wide temperature range of 1.5 -- 300 K to investigate electronic properties of Ge$_{50}$Te$_{50}$, Ag$_{2}$Ge$_{48}$Te$_{50}$ and Sb$_{2}$Ge$_{48}$Te$_{50}$ from a…

Among ultrawide bandgap semiconductors, beta-Ga2O3 is particularly promising for high power and frequency applications. For devices, n-type concentrations above 10^19 cm^-3 are required. Ge is a promising alternative n-type dopant with an…

High-purity germanium crystals approximately 12 cm in diameter were grown in a hydrogen atmosphere using the Czochralski method. The dislocation density of the crystals was determined to be in the range of 2000 - 4200 cm-2, which meets a…

Depth profiling of thin films by inert gas sputtering is one of the most important applications of Auger electron spectroscopy and X-ray photoelectron spectroscopy. Such an analysis monitors the elemental in-depth composition of the thin…

Our study shows that deposited Ge and Si dielectric thin-films can exhibit low microwave losses at near single-photon powers and sub-Kelvin temperatures ($\approx$40 mK). This low loss enables their use in a wide range of devices, including…

Superlattice-like phase change memory (SL-PCM) promises lower switching current than conventional PCM based on Ge2Sb2Te5 (GST). However, a fundamental understanding of SL-PCM requires detailed characterization of the interfaces within such…

The characteristics of a hydrogenated amorphous silicon (a-Si:H) detector are presented here for monitoring in space solar flares and the evolution of large energetic proton events up to hundreds of MeV. The a-Si:H presents an excellent…

Hybrid Superconductor-Semiconductor (S-Sm) materials systems are promising candidates for quantum computing applications. Their integration into superconducting electronics has enabled on-demand voltage tunability at millikelvin…

The structural, electronic and dynamical properties of a group of 2D germanium-based compounds, including GeC, GeN, GeO, GeSi, GeS, GeSe, and germanene, are investigated by employing first-principles calculations. The most stable structure…

Holes in planar germanium (Ge) heterostructures show promise for quantum applications, particularly in superconducting and spin qubits, due to strong spin-orbit interaction, low effective mass, and absence of valley degeneracies. However,…

We report on thin-film processing improvements in the fabrication of superconducting quasiparticle-trap-assisted electrothermal-feedback transition-edge sensors (QETs) used in the design of Cryogenic Dark Matter Search (CDMS) detectors. The…

We present a method to fabricate tensile-strained germanium-on-insulator (GOI) substrates using heteroepitaxy and layer transfer techniques. The motivation is to obtain a high-quality wafer-scale GOI platform suitable for silicon-compatible…

Photonic quantum technologies such as effective quantum communication require room temperature (RT) operating single- or few- photon sensors with high external quantum efficiency (EQE) at 1550 nm wavelength. The leading class of devices in…

Solar cells manufactured on top of Ge substrates suffer from inherent drawbacks that hinder or limit their potential. The most deleterious ones are heavy weight, high bulk recombination, lack of photon confinement and an increase of the…

We have fabricated AlGaAs/GaAs heterostructure devices in which the conduction channel can be populated with either electrons or holes simply by changing the polarity of a gate bias. The heterostructures are entirely undoped, and carriers…