大尺寸高纯锗晶体的晶体生长及探测器性能
仪器与探测器
2015-05-08 v1 核实验
摘要
采用直拉法在氢气气氛中生长了直径约12 cm的高纯锗晶体。晶体的位错密度测定为2000 - 4200 cm-2，满足作为辐射探测器的要求。测量并讨论了晶体中杂质的轴向和径向分布。还由其中一块晶体制作了平面探测器，并评估了其电学和能谱性能。来自Cs-137和Am-241源的伽马射线能谱测量表明该探测器具有优异的能量分辨率。
引用
@article{arxiv.1505.01827,
title = {Crystal growth and detector performance of large size high-purity Ge crystals},
author = {Guojian Wang and Mark Amman and Hao Mei and Dongming Mei and Klaus Irmscher and Yutong Guan and Gang Yang},
journal= {arXiv preprint arXiv:1505.01827},
year = {2015}
}
备注
22 pages, 11 figures, Accepted for publication in Materials Science in Semiconductor Processing