相关论文: Donors and Deep Acceptors in $\beta$-Ga2O3

We report on the tuning of electrical, magnetic, and topological properties of the magnetic Weyl semimetal (Mn$_{3+x}$Ge) by Fe doping at the Mn site, Mn$_{(3+x)-\delta}$Fe$_{\delta}$Ge ($\delta$=0, 0.30, and 0.62). Fe doping significantly…

We report the synthesis of alpha-Fe1.4Ga0.6O3 compound and present its structural phase stability and interesting magnetic, dielectric and photo-absorption properties. In our work Ga doped alpha-Fe2O3 samples are well stabilized in alpha…

Hall effect based magnetic field sensors are vector sensors which are sensitive to the perpendicular component of the magnetic field. Typically, Si-based Hall sensors are used for most usages requiring low field sensitivity. For higher…

Van der Waals ferromagnet Fe3GaTe2 with room-temperature perpendicular magnetic anisotropy and strong anomalous Hall effect has attracted considerable interest for their potential in spintronics. However, the microscopic mechanisms and…

The temperature dependence of the Hall coefficient of a series of ferromagnetic Ga(1-x)Mn(x)As samples is measured in the temperature range 80K < T < 500K. We model the Hall coefficient assuming a magnetic susceptibility given by the…

This study examines the anomalous Hall effect (AHE) in the Heusler series \ce{Mn3Z} (Z=Ga, Ge, Sn), with a particular emphasis on the manipulation of non-collinear antiferromagnetic structures to enhance AHE. By employing density-functional…

Measurements of the Hall effect, thermoelectric power, magnetic susceptibility and upper and lower critical fields were performed on single crystals of SrFe(2-x)Ni(x)As2, an FeAs-based superconducting system that exhibits a reduced…

We present ab initio density-functional calculations for acceptors, donors, and native defects in aluminum nitride, showing that acceptors are deeper (Be ~ 0.25 eV, Mg_ 0.45 eV) and less soluble than in GaN; at further variance with GaN,…

The semiconducting oxide $\beta$-Gallium Oxide ($\beta$-Ga$_{2}$O$_{3}$) possesses a monoclinic unit cell whose low symmetry generally leads to anisotropic physical properties. For example, its electrical conductivity is generally described…

We have measured the conductivity in a gated high-mobility GaAs two dimensional hole sample with densities in the range (7-17)x10^9 cm^-2 and at hole temperatures down to 5x10^-3 E_F. We measure the weak localization corrections to the…

Correlation between structural/microstructural and magneto-thermal transport properties of FeAs-based SmFeAsO and SmFeAsO0.85F0.15 has been studied in detail. The Rietveld analysis of room temperature powder X-ray diffraction (XRD) data…

The photoconductivity of GaAs structures delta-doped by Sn has been investigated for wavelengths lambda= 650-1200 nm in the temperature interval T= 4.2-300 K. The electron densities and mobilities, before and after illumination, have been…

The thermoelectric and transport properties of a Fe3O4/SiO2/p-Si(100) heterostructure have been investigated between 100 and 300 K. Both Hall and Seebeck coefficients change sign from negative to positive with increasing temperature while…

The thermal conductivity \kappa of Cu_1-xMg_xGeO_3 is measured in magnetic fields up to 16 T. At the transition field H_c to the high-field incommensurate (I) phase, \kappa abruptly decreases. While \kappa of the pure CuGeO_3 is enhanced…

We prepared single unit cell FeSe films on GaO$_{2-\delta}$ terminated perovskite NdGaO$_{3}$(110) substrates and performed ex situ transport and scanning transmission electron microscopy measurements on the FeTe protected films. Our…

We report on a systematic investigation of the dominant scattering mechanism in shallow two-dimensional electron gases (2DEGs) formed in modulation-doped GaAs/Al_{x}Ga_{1-x}As heterostructures. The power-law exponent of the electron…

We present a unified approach for calculating the properties of shallow donors inside or outside heterostructure quantum wells. The method allows us to obtain not only the binding energies of all localized states of any symmetry, but also…

We investigate the role of transition metal atoms of group V-b (V, Nb, and Ta) and VI-b (Cr, Mo, and W) as n- or p-type dopants in anatase TiO2 using thermodynamic principles and density functional theory with the Heyd-Scuseria-Ernzerhof…

The samples of Ga doped Cr2O3 oxide have been prepared using chemical co-precipitation route. X-ray diffraction pattern and Raman spectra have confirmed rhombohedral crystal structure with space group R3-C. Magnetic measurement has…

Ga2O3 is being actively explored for high-power and high-temperature electronics, deep-ultraviolet optoelectronics, and other applications. Efficient n-type doping of Ga2O3 has been achieved, but p-type doping faces fundamental obstacles…