相关论文: Stress control of tensile-strained In$_{1-x}$Ga$_{…

We investigate the tensile stress in freely suspended nanomechanical string resonators, and observe a material-independent dependence on the resonator length. We compare strongly stressed sting resonators fabricated from four different…

We study the transverse oscillatory modes of nanomechanical silicon nitride strings under high tensile stress as a function of geometry and mode index m <= 9. Reproducing all observed resonance frequencies with classical elastic theory we…

Tensile-strained materials have been used to fabricate nano- and micromechanical resonators with ultra-low mechanical dissipation in the kHz to MHz frequency range. These mechanical resonators are of particular interest for force sensing…

We investigate the optomechanical properties of tensile-strained ternary InGaP nanomembranes grown on GaAs. This material system combines the benefits of highly strained membranes based on stoichiometric silicon nitride, with the unique…

Strain engineering provides an effective way of tailoring the electronic and optoelectronic properties of semiconductor nanomaterials and nanodevices, giving rise to novel functionalities. Here, we present direct experimental evidence of…

Various phenomena (phase transformations, chemical reactions, and friction) under high pressures in diamond anvil cell are strongly affected by fields of all components of stress and plastic strain tensors. However, they could not be…

Strain-engineering in SiGe nanostructures is fundamental for the design of optoelectronic devices at the nanoscale. Here we explore a new strategy, where SiGe structures are laterally confined by the Si substrate, to obtain high tensile…

Strain engineering allows the physical properties of materials and devices to be widely tailored, as paradigmatically demonstrated by strained transistors and semiconductor lasers employed in consumer electronics. For this reason, its…

A remarkably strong dependence of magnetoimpedance (MI) on tensile stress has been observed in the microwave frequency range for thin CoMnSiB glass-coated microwires exposed to a special thermal treatment. The MI ratio runs into more than…

We investigate the effect of mechanical strain on the dynamics of thin $\mathrm{MoS_2}$ nanodrum resonators. Using a piezoelectric crystal, compressive and tensile biaxial strain is induced in initially flat and buckled devices. In the flat…

We prepared Ga0.95Mn0.05As films on top of periodic arrays of InAs quantum dots. X-ray diffraction reveals periodically strained films, commensurate to substrate's patterning. The dots produce a tensile strain in GaMnAs while between the…

Based on a detailed theoretical examination of the lattice distortion in high-index epilayers in terms of continuum mechanics, expressions are deduced that allow the calculation and experimental determination of the strain tensor for…

A combination of micro-Raman spectroscopy and micro-XPS (X-ray photo-electron spectroscopy) mapping on statically deflected p-type silicon cantilevers is used to study the mechanical stress dependence of the Fermi level pinning at an…

The precise measurement of mechanical stress at the nanoscale is of fundamental and technological importance. In principle, all six independent variables of the stress tensor, which describe the direction and magnitude of…

Conventional polycrystalline materials acquire high levels of intrinsic mechanical stress (ranging from MPa to a few GPa) during preparation and use, but this stress decays quickly (~minutes) to small residual values (~kPa) under standard…

Modulation of stress anisotropy of magnetostrictive nanomagnets with strain offers an extremely energy-efficient method of magnetization reversal. The reversal process, however, is often incoherent and hence error-prone in the presence of…

Strain and composition play a fundamental role in semiconductor physics, since they are means to tune the electronic and optical properties of a material and hence develop new devices. Today it is still a challenge to measure strain in…

The demand of fast and power efficient spintronics devices with flexibility requires additional energy for magnetization manipulation. Stress/and strain have shown their potentials for tuning magnetic properties to the desired level. Here,…

We study the three-dimensional deformation field induced by an axial (In,Ga)N segment in a GaN nanowire. Using the finite element method within the framework of linear elasticity theory, we study the dependence of the strain field on the…

A (Ga,Mn)As nanoelectromechanical resonator is used to obtain the first direct measurement of magnetostriction in a dilute magnetic semiconductor. Field-dependent magnetoelastic stress induces shifts in resonance frequency that can be…