相关论文: Large-scale defects hidden inside a topological in…
Molecular-beam epitaxy (MBE) provides a simple but powerful way to synthesize large-area high-quality thin films and heterostructures of a wide variety of materials including accomplished group III-V and II-VI semiconductors as well as…
Topological insulators (TIs) are a class of materials which are insulating in their bulk form yet, upon introduction of an a boundary or edge, e.g. by abruptly terminating the material, may exhibit spontaneous current along their boundary.…
Meeting of non-trivial topology with magnetism results in novel phases of matter, such as Quantum Anomalous Hall (QAH) or axion insulator phases. Even more exotic states with high and tunable Chern numbers are expected at the contact of…
We grow nearly freestanding single-layer 1T'-WTe2 on graphitized 6H-SiC(0001) by using molecular beam epitaxy (MBE), and characterize its electronic structure with scanning tunneling microscopy / spectroscopy (STM/STS). We demonstrate the…
Dielectric integration of layered semiconductors is a prerequisite for fabricating high-quality optoelectronic, valleytronic, and quantum-photonic devices. While hexagonal boron nitride (hBN) is the current benchmark dielectric, exploration…
We use first-principles simulations to investigate the topological properties of Bi$_2$Se$_3$ thin films deposited on amorphous SiO2, Bi$_2$Se$_3$/a-SiO$_2$, which is a promising substrate for topological insulator (TI) based device…
Bi$_2$Se$_3$ is a widely studied 3D topological insulator having potential applications in optics, electronics, and spintronics. When the thickness of these films decrease to less than approximately 6 nm, the top and bottom surface states…
We investigate electromagnetic properties of a topological crystalline insulator (TCI) thin film under external electromagnetic fields. The TCI thin film is a topological insulator indexed by the mirror-Chern number. It is demonstrated that…
We present a comprehensive study of the crystal structure of the thin-film, ferromagnetic topological insulator (Bi, Sb)$_{2-x}$V$_x$Te$_3$. The dissipationless quantum anomalous Hall edge states it manifests are of particular interest for…
Using the non-equilibrium Keldysh Green's function formalism, we investigate the effect of defects on the electronic structure and transport properties of two-dimensional topological insulators (TI). We demonstrate how the spatial flow of…
We employed graphene as a patternable template to protect the intrinsic surface states of thin films of topological insulators (TIs) from environment. Here we find that the graphene provides high-quality interface so that the Shubnikov de…
Topological insulator (TI) is an exciting discovery because of its robustness against disorder and interactions. Recently, higher-order TIs have been attracting increasing attention, because they host 1D topologically-protected hinge states…
The application of new materials in nanotechnology opens new perspectives and enables ground-breaking innovations. Two-dimensional van der Waals materials and more specific, 2D chalcogenides are a promising class of new materials awaiting…
Spinodal decomposition is proposed for stabilizing self-assembled interfaces between topological insulators (TIs) by combining layers of iso-structural and iso-valent TlBi$X_2$ ($X$=S, Se, Te) materials. The composition range for gapless…
Recently, two-dimensional (2D) transition metal carbides and nitrides, namely, MXenes have attracted lots of attention for electronic and energy storage applications. Due to a large spin-orbit coupling (SOC) and the existence of a…
Ultrathin topological insulator membranes are building blocks of exotic quantum matter. However, traditional epitaxy of these materials does not facilitate stacking in arbitrary orders, while mechanical exfoliation from bulk crystals is…
Bi$_{2}$Te$_{3}$ and Bi$_{2}$Se$_{3}$ are well known 3D-topological insulators. Films made of these materials exhibit metal-like surface states with a Dirac dispersion and possess high mobility. The high mobility metal-like surface states…
Topological materials are typically characterized by gapless boundary states originated from nontrivial bulk band topology, known as topological bulk-boundary correspondence. Recently, this fundamental concept has been generalized in…
Tuning the interaction between the bulk and edge states of topological materials is a powerful tool for manipulating edge transport behavior, opening up exciting opportunities for novel electronic and spintronic applications. This approach…
Hybrid structures between conventional, s-wave superconductors and two-dimensional topological insulators (2D TIs) are a promising route to topological superconductivity. Here, we investigate planar Josephson junctions fabricated from…