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相关论文: Doped and Codoped Silicon Nanocrystals: the Role o…

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We show that the optical and electronic properties of nanocrystalline silicon can be efficiently tuned using impurity doping. In particular, we give evidence, by means of ab-initio calculations, that by properly controlling the doping with…

其他凝聚态物理 · 物理学 2009-11-13 Federico Iori , Elena Degoli , Rita Magri , Ivan Marri , G. Cantele , D. Ninno , F. Trani , O. Pulci , Stefano Ossicini

Silicon nanocrystals with diameters between 1 and 3 nm and surfaces passivated by chlorine or a mixture of chlorine and hydrogen were modeled using density functional theory, and their properties compared with those of fully hydrogenated…

介观与纳米尺度物理 · 物理学 2013-11-06 A. Carvalho , S. Öberg , M. J. Rayson , P. R. Briddon

The structural, electronic and optical properties of Si nanocrystals of different size and shape, passivated with hydrogens, OH groups, or embedded in a SiO2 matrix are studied. The comparison between the embedded and free, suspended…

材料科学 · 物理学 2010-09-01 Roberto Guerra , Elena Degoli , Stefano Ossicini

In this work we aim at understanding the effect of n-type and p-type substitutional doping in the case of matrix-embedded and freestanding Si nanocrystals. By means of ab-initio calculations we identify the preferential positioning of the…

介观与纳米尺度物理 · 物理学 2015-05-28 Roberto Guerra , Stefano Ossicini

The electrical functionality of an array of semiconductor nanocrystals depends critically on the free carriers that may arise from impurity or surface doping. Herein, we used InAs nanocrystals thin films as a model system to address the…

介观与纳米尺度物理 · 物理学 2021-05-28 Durgesh C. Tripathi , Lior Asor , Gil Zaharoni , Uri Banin , Nir Tessler

The controlled modification of the electronic properties of ZnO nanorods via transition metal doping is reported. A series of ZnO nanorods were synthesized by chemical bath growth with varying Co content from 0 to 20 atomic % in the growth…

We compare, through first-principles pseudopotential calculations, the structural, electronic and optical properties of different size silicon nanoclusters embedded in a SiO2 crystalline or amorphous matrix, with that of free-standing,…

Doping of semiconductors by impurity atoms enabled their widespread technological application in micro and opto-electronics. For colloidal semiconductor nanocrystals, an emerging family of materials where size, composition and shape-control…

材料科学 · 物理学 2021-05-25 David Mocatta , Guy Cohen , Jonathan Schattner , Oded Millo , Eran Rabani , Uri Banin

Control of dopants in silicon remains the most important approach to tailoring the properties of electronic materials for integrated circuits, with Group V impurities the most important n-type dopants. At the same time, silicon is finding…

Reactions at solid-water interfaces play a foundational role in water treatment systems, catalysis, chemical separations, and in predicting chemical fate and transport in the environment. Over the last century, experimental measurements and…

化学物理 · 物理学 2022-12-14 Anastasia G. Ilgen , Kevin Leung , Louise J. Criscenti , Jeffery A. Greathouse

Modifying the optoelectronic properties of nanostructured materials through introduction of dopant atoms has attracted intense interest. Nevertheless, the approaches employed are often trial and error, preventing rational design. We…

材料科学 · 物理学 2021-07-13 Michael G. Taylor , Heather J. Kulik

In this study, using first-principles calculations, we investigate the behavior of electrons at the SiC/SiO$_2$ interface when nitrogen is introduced as a dopant within a few nm of the SiC surface. When a highly doped nitrogen layer…

材料科学 · 物理学 2023-07-05 Keita Tachiki , Yusuke Nishiya , Jun-ichi Iwata , Yu-ichiro Matsushita

Deep defects in silicon carbide (SiC) possess atom-like electronic, spin and optical properties, making them ideal for quantum-computing and -sensing applications. In these applications, deep defects are often placed within fabricated…

材料科学 · 物理学 2022-05-09 Tamanna Joshi , Pratibha Dev

The preferred location of boron and phosphorus in oxidized free-standing Si nanoparticles was investigated using a first-principles density functional approach. The calculated formation energies indicate that P should segregate to the…

材料科学 · 物理学 2015-06-05 A. Carvalho , S. Oberg , M. Barroso , M. J. Rayson , P. R. Briddon

Surfaces are at the frontier of every known solid. They provide versatile supports for functional nanostructures and mediate essential physicochemical processes. Being intimately related with 2D materials, interfaces and atomically thin…

Atomic nanolines are one dimensional systems realized by assembling many atoms on a substrate into long arrays. The electronic properties of the nanolines depend on those of the substrate. Here, we demonstrate that to fully understand the…

材料科学 · 物理学 2017-12-20 M. Longobardi , C. J. Kirkham , R. Villarreal , S. A. Koster , D. R. Bowler , Ch. Renner

Silicon nanoparticles are widely used in the medical area and until now they have not manifested toxicological effects in humans beings. In order to understand the physical properties that determine their low-toxicity, we perform ab initio…

材料科学 · 物理学 2013-09-17 E. R. L. Loustau , J. Klapp

Silicon carbide (SiC), is an artificial semiconductor used for high-power transistors and blue LEDs, for its extraordinary properties. SiC would be attractive for more applications, but large-scale or large-surface area fabrication, with…

Surface structure affects the growth, shape and properties of nanoparticles. In wet chemical syntheses, metal additives and surfactants are used to modify surfaces and guide nanocrystal growth. To understand this process, it is critical to…

Nanowires play a pivotal role across a spectrum of disciplines such as nanoelectromechanical systems, nanoelectronics, and energy applications. As nanowires continue to diminish in dimensions, their mechanical characteristics are…

材料科学 · 物理学 2023-08-29 Sina Zare Pakzad , Mohammad Nasr Esfahani , B. Erdem Alaca
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